公开(公告)号：US20240420949A1

公开(公告)日：2024-12-19

申请号：US18210522

申请日：2023-06-15

Applicant: Applied Materials, Inc.

Inventor： Woongsik Nam ,  Euhngi Lee ,  Tianyang Li ,  Jisung Park ,  Hang Yu ,  Deenesh Padhi ,  Shichen Fu ,  Yufeng Jiang

IPC: H01L21/02

Abstract: Exemplary processing methods may include i) providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include one or more features defining one or more sidewalls. The methods may include ii) forming plasma effluents of the one or more deposition precursors. The methods may include iii) contacting the substrate with the plasma effluents of the one or more deposition precursors. The contacting may deposit a doped silicon-and-oxygen-containing material on the substrate. A first portion of the doped silicon-and-oxygen-containing material deposited on the one or more sidewalls of the one or more features may be characterized by a poorer film quality than a second portion of the doped silicon-and-oxygen-containing material deposited on a lower portion of the one or more features.