公开(公告)号：US20240038833A1

公开(公告)日：2024-02-01

申请号：US18222086

申请日：2023-07-14

Applicant: Applied Materials, Inc.

Inventor： Fredrick Fishburn ,  Tomohiko Kitajima ,  Qian Fu ,  Srinivas Guggilla ,  Hang Yu ,  Jun Feng ,  Shih Chung Chen ,  Lakmal C. Kalutarage ,  Jayden Potter ,  Karthik Janakiraman ,  Deenesh Padhi ,  Yifeng Zhou ,  Yufeng Jiang ,  Sung-Kwan Kang

IPC: H10B12/00

CPC classification number: H01L28/91 ,  H01L28/92 ,  H10B12/03 ,  H10B12/30

Abstract: Memory devices and methods of forming memory devices are described. Methods of forming electronic devices are described where carbon is used as the removable mold material for the formation of a DRAM capacitor. A dense, high-temperature (500° C. or greater) PECVD carbon material is used as the removable mold material, e.g., the core material, instead of oxide. The carbon material can be removed by isotropic etching with exposure to radicals of oxygen (O2), nitrogen (N2), hydrogen (H2), ammonia (NH3), and combinations thereof.

公开(公告)号：US20240420949A1

公开(公告)日：2024-12-19

申请号：US18210522

申请日：2023-06-15

Applicant: Applied Materials, Inc.

Inventor： Woongsik Nam ,  Euhngi Lee ,  Tianyang Li ,  Jisung Park ,  Hang Yu ,  Deenesh Padhi ,  Shichen Fu ,  Yufeng Jiang

IPC: H01L21/02

Abstract: Exemplary processing methods may include i) providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include one or more features defining one or more sidewalls. The methods may include ii) forming plasma effluents of the one or more deposition precursors. The methods may include iii) contacting the substrate with the plasma effluents of the one or more deposition precursors. The contacting may deposit a doped silicon-and-oxygen-containing material on the substrate. A first portion of the doped silicon-and-oxygen-containing material deposited on the one or more sidewalls of the one or more features may be characterized by a poorer film quality than a second portion of the doped silicon-and-oxygen-containing material deposited on a lower portion of the one or more features.