公开(公告)号：US20220307131A1

公开(公告)日：2022-09-29

申请号：US17213908

申请日：2021-03-26

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Seyyed Abdolreza Fazeli ,  Yang Guo ,  Ramcharan Sundar ,  Arun Kumar Kotrappa ,  Steven Mosbrucker ,  Steven D. Marcus ,  Xinhai Han ,  Kesong Hu ,  Tianyang Li ,  Philip A. Kraus

IPC: C23C16/455 ,  C23C16/458 ,  H01J37/32 ,  C23C14/56

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may define a plurality of isolators. An isolator may be positioned between each lid stack and a corresponding aperture of the plurality of apertures. The systems may include a plurality of annular spacers. An annular spacer of the plurality of annular spacers may be positioned between each isolator and a corresponding lid stack of the plurality of lids stacks. The systems may include a plurality of manifolds. A manifold may be seated within an interior of each annular spacer of the plurality of annular spacers.

公开(公告)号：US20220216048A1

公开(公告)日：2022-07-07

申请号：US17142641

申请日：2021-01-06

Applicant: Applied Materials, Inc.

Inventor： Tianyang Li ,  Deenesh Padhi ,  Xinhai Han ,  Hang Yu ,  Chuan Ying Wang

IPC: H01L21/02

Abstract: Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.

公开(公告)号：US20250125145A1

公开(公告)日：2025-04-17

申请号：US18485172

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： Tianyang Li ,  Hang Yu ,  Rui Cheng ,  Deenesh Padhi ,  Woongsik Nam

IPC: H01L21/02 ,  H01J37/32

Abstract: Exemplary methods of forming a silicon-containing material may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber and include one or more features. The methods may include generating plasma effluents of the silicon-containing precursor in the processing region. The methods may include depositing a silicon-containing material on a vertically extending portion and a horizontally extending portion of the feature. Methods include soaking the deposited silicon-containing material with a second silicon-containing material.

公开(公告)号：US20240332006A1

公开(公告)日：2024-10-03

申请号：US18192557

申请日：2023-03-29

Applicant: Applied Materials, Inc.

Inventor： Tianyang Li ,  Jisung Park ,  Xinhai Han ,  Woongsik Nam ,  Deenesh Padhi

IPC: H01L21/02 ,  H01L21/324

CPC classification number: H01L21/02274 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02236 ,  H01L21/324

Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor to the processing region. The methods may include generating plasma effluents of the silicon-containing precursor and plasma effluents of the hydrogen-containing precursor in the processing region. The plasma effluents may be generated at a frequency greater than 15 MHz. The methods may include depositing a silicon-containing material on the substrate.

公开(公告)号：US11946140B2

公开(公告)日：2024-04-02

申请号：US17213908

申请日：2021-03-26

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Seyyed Abdolreza Fazeli ,  Yang Guo ,  Ramcharan Sundar ,  Arun Kumar Kotrappa ,  Steven Mosbrucker ,  Steven D. Marcus ,  Xinhai Han ,  Kesong Hu ,  Tianyang Li ,  Philip A. Kraus

IPC: C23C16/455 ,  C23C14/56 ,  C23C16/458 ,  H01J37/32

CPC classification number: C23C16/45565 ,  C23C14/564 ,  C23C16/45536 ,  C23C16/4586 ,  H01J37/32082

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may define a plurality of isolators. An isolator may be positioned between each lid stack and a corresponding aperture of the plurality of apertures. The systems may include a plurality of annular spacers. An annular spacer of the plurality of annular spacers may be positioned between each isolator and a corresponding lid stack of the plurality of lids stacks. The systems may include a plurality of manifolds. A manifold may be seated within an interior of each annular spacer of the plurality of annular spacers.

公开(公告)号：US20240420949A1

公开(公告)日：2024-12-19

申请号：US18210522

申请日：2023-06-15

Applicant: Applied Materials, Inc.

Inventor： Woongsik Nam ,  Euhngi Lee ,  Tianyang Li ,  Jisung Park ,  Hang Yu ,  Deenesh Padhi ,  Shichen Fu ,  Yufeng Jiang

IPC: H01L21/02

Abstract: Exemplary processing methods may include i) providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include one or more features defining one or more sidewalls. The methods may include ii) forming plasma effluents of the one or more deposition precursors. The methods may include iii) contacting the substrate with the plasma effluents of the one or more deposition precursors. The contacting may deposit a doped silicon-and-oxygen-containing material on the substrate. A first portion of the doped silicon-and-oxygen-containing material deposited on the one or more sidewalls of the one or more features may be characterized by a poorer film quality than a second portion of the doped silicon-and-oxygen-containing material deposited on a lower portion of the one or more features.

公开(公告)号：US20230369072A1

公开(公告)日：2023-11-16

申请号：US17743922

申请日：2022-05-13

Applicant: Applied Materials, Inc.

Inventor： Daemian Raj Benjamin Raj ,  Collen Leng ,  Syed A. Alam ,  Tianyang Li

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67017 ,  H01J37/3244 ,  H01J37/32899 ,  H01J2237/332 ,  H01J2237/24585

Abstract: Exemplary fluid delivery assemblies for a semiconductor processing system may include a liquid delivery source. The assemblies may include a heater that is fluidly coupled with an outlet of the liquid delivery source. The assemblies may include a liquid flow controller that is fluidly coupled with the liquid delivery source downstream of the heater. The assemblies may include a liquid vaporizer fluidly coupled with a downstream end of the liquid flow controller. The assemblies may include a chamber delivery line coupled with an output of the liquid vaporizer.