公开(公告)号：US12183631B2

公开(公告)日：2024-12-31

申请号：US17839817

申请日：2022-06-14

Applicant: Applied Materials, Inc.

Inventor： Suketu Parikh ,  Alexander Jansen ,  Joung Joo Lee ,  Lequn Liu

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3105 ,  H01L23/532

Abstract: Methods for forming interconnects on a substrate with low resistivity and high dopant interfaces. In some embodiments, a method includes depositing a first copper layer with a dopant with a first dopant content of 0.5 percent to 10 percent in the interconnect by sputtering a first copper-based target at a first temperature of zero degrees Celsius to 200 degrees Celsius, annealing the substrate at a second temperature of 200 degrees Celsius to 400 degrees Celsius to reflow the first copper layer, depositing a second copper layer with the dopant with a second dopant content of zero percent to 0.5 percent by sputtering a second copper-based target at the first temperature of zero degrees Celsius to 200 degrees Celsius, and annealing the substrate at a third temperature of 200 degrees Celsius to 400 degrees Celsius to reflow the second copper layer.

公开(公告)号：US20250035680A1

公开(公告)日：2025-01-30

申请号：US18226554

申请日：2023-07-26

Applicant: Applied Materials, Inc.

Inventor： Suketu Parikh ,  Jimmy Iskandar ,  Tsz Keung Cheung ,  Chih Wei Lin ,  Michael D. Armacost

IPC: G01R19/12 ,  H01L21/66

Abstract: An electronic device manufacturing system configured to obtain current sensor data associated with a sensor of a substrate manufacturing system and determine a slope value associated with the current sensor data. Responsive to determining that the slope value satisfied a threshold criterion associated with a fault detection limit, at least one of an alert is generated or a corrective action performed.