公开(公告)号：US11866821B2

公开(公告)日：2024-01-09

申请号：US16806656

申请日：2020-03-02

Applicant: Applied Materials, Inc.

Inventor： Shuran Sheng ,  Lin Zhang ,  Jiyong Huang ,  Joseph C. Werner ,  Stanley Wu ,  Mahesh Adinath Kanawade ,  Yikai Chen ,  Yixing Lin ,  Ying Ma

IPC: C23C16/44 ,  C01F17/265 ,  C23C16/458 ,  C01F17/229 ,  C01F17/218

CPC classification number: C23C16/4404 ,  C01F17/265 ,  C23C16/4405 ,  C23C16/4581 ,  C23C16/4585 ,  C01F17/218 ,  C01F17/229

Abstract: Embodiments of the present disclosure generally relate to an apparatus and a method for cleaning a processing chamber. In one embodiment, a substrate support cover includes a bulk member coated with a fluoride coating. The substrate support cover is placed on a substrate support disposed in the processing chamber during a cleaning process. The fluoride coating does not react with the cleaning species. The substrate support cover protects the substrate support from reacting with the cleaning species, leading to reduced condensation formed on chamber components, which in turn leads to reduced contamination of the substrate in subsequent processes.

公开(公告)号：US11768984B2

公开(公告)日：2023-09-26

申请号：US16948522

申请日：2020-09-22

Applicant: Applied Materials, Inc.

Inventor： Ala Moradian ,  James Omer L'Heureux ,  Shuran Sheng ,  Rohit Mahakali ,  Karthik Ramanathan ,  Lin Zhang ,  Umesh Madhav Kelkar ,  Gopalakrishna B. Prabhu ,  Zheng Yuan ,  Jeonghoon Oh

IPC: G06F30/28 ,  G01D21/02 ,  G01D18/00 ,  G06F119/02 ,  G06F111/10 ,  G06F113/08

CPC classification number: G06F30/28 ,  G01D18/00 ,  G01D21/02 ,  G06F2111/10 ,  G06F2113/08 ,  G06F2119/02

Abstract: A method includes receiving measurement data from multiple sensors positioned along a delivery line that delivers a liquid as a gas to one of a gas panel or a processing chamber; simulating, using a computer-generated model, one or more process parameters associated with the delivery line and a plurality of heater jackets positioned around the delivery line; comparing the measurement data with values of the one or more process parameters; and determining, based on at least a threshold deviation between the measurement data and the values of the one or more process parameters, that a fault exists that is associated with maintaining temperature within the delivery line consistent with a gaseous state of the liquid.

公开(公告)号：US11499231B2

公开(公告)日：2022-11-15

申请号：US16844089

申请日：2020-04-09

Applicant: Applied Materials, Inc.

Inventor： Shuran Sheng ,  Lin Zhang ,  Joseph C. Werner

IPC: C23C16/50 ,  H01J37/32 ,  H01L21/67 ,  C23C16/458 ,  H01L21/02 ,  H01L27/11551 ,  H01L27/11578 ,  H01L21/687

Abstract: Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.

公开(公告)号：US10655223B2

公开(公告)日：2020-05-19

申请号：US16268194

申请日：2019-02-05

Applicant: Applied Materials, Inc.

Inventor： Lin Zhang ,  Xuesong Lu ,  Andrew V. Le ,  Jang Seok Oh

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/507 ,  H01J37/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/505

Abstract: Embodiments described herein relate to apparatus and coating methods to reduce chamber arcing, for example, in HDP-CVD, PECVD, PE-ALD and Etch chambers. The apparatus include a ring shaped gas distributor used for in-situ deposition of coating materials, and a process chamber including the same. The ring shaped gas distributor includes a ring shaped body having at least one gas entrance port disposed on a first side thereof and a plurality of gas distribution ports disposed on a first surface of the ring shaped body. The plurality of gas distribution ports are arranged in a plurality of evenly distributed rows. The plurality of gas distribution ports in a first row of the plurality of evenly distributed rows is adapted to direct gas at an exit angle different from an exit angle of the plurality of gas distribution ports in a second row of the plurality of evenly distributed rows.

公开(公告)号：US10002745B2

公开(公告)日：2018-06-19

申请号：US15145750

申请日：2016-05-03

Applicant: Applied Materials, Inc.

Inventor： Lin Zhang ,  Xuesong Lu ,  Andrew V. Le ,  Jang Seok Oh ,  Xinhai Han

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32862 ,  H01J2237/334 ,  H01J2237/335

Abstract: Embodiments of the disclosure include methods for in-situ chamber cleaning efficiency enhancement process for a plasma processing chamber utilized for a semiconductor substrate fabrication process. In one embodiment, a method for performing a plasma treatment process after cleaning a plasma process includes performing a cleaning process in a plasma processing chamber in absent of a substrate disposed thereon, subsequently supplying a plasma treatment gas mixture including at least a hydrogen containing gas and/or an oxygen containing gas into the plasma processing chamber, applying a RF source power to the processing chamber to form a plasma from the plasma treatment gas mixture, and plasma treating an interior surface of the processing chamber.

公开(公告)号：US09716012B2

公开(公告)日：2017-07-25

申请号：US14560525

申请日：2014-12-04

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Huixiong Dai ,  Patrick M. Martin ,  Timothy Michaelson ,  Kadthala R. Narendrnath ,  Robert Jan Visser ,  Jingjing Xu ,  Lin Zhang

IPC: H01L21/3205 ,  C23C16/04 ,  C23C16/18 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/32051 ,  C23C16/04 ,  C23C16/18 ,  C23C16/45551 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76849

Abstract: Provided are methods for selective deposition. Certain methods describe providing a first substrate surface; providing a second substrate surface; depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and etching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed.

公开(公告)号：US20150275364A1

公开(公告)日：2015-10-01

申请号：US14666689

申请日：2015-03-24

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Huixiong Dai ,  Patrick M. Martin ,  Timothy Michaelson ,  Kadthala R. Narendrnath ,  Robert Jan Visser ,  Jingjing Xu ,  Lin Zhang

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/458

CPC classification number: C23C16/45544 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/56 ,  H01L21/68764 ,  H01L21/68771

Abstract: Provided are apparatus and methods for the sequential deposition and annealing of a film within a single processing chamber. An energy source positioned within the processing chamber in an area isolated from process gases can be used to rapidly form and decompose a film on the substrate without damaging underlying layers due to exceeding the thermal budget of the device being formed.

Abstract translation: 提供了用于在单个处理室内顺序沉积和退火膜的装置和方法。 位于与处理气体隔离的区域内的处理室内的能量源可用于快速地形成和分解衬底上的膜，而不会由于超过正在形成的器件的热量预算而损坏下层。

公开(公告)号：US11846011B2

公开(公告)日：2023-12-19

申请号：US17979099

申请日：2022-11-02

Applicant: Applied Materials, Inc.

Inventor： Shuran Sheng ,  Lin Zhang ,  Joseph C. Werner

IPC: C23C16/50 ,  H01J37/32 ,  H01L21/67 ,  C23C16/458 ,  H01L21/02 ,  H01L21/687 ,  H10B41/20 ,  H10B43/20

CPC classification number: C23C16/50 ,  C23C16/4583 ,  H01J37/3244 ,  H01J37/32724 ,  H01J37/32899 ,  H01L21/67017 ,  H01L21/67167 ,  H01J2237/002 ,  H01J2237/3321 ,  H01L21/022 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/68742 ,  H10B41/20 ,  H10B43/20

Abstract: Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.

公开(公告)号：US20230049431A1

公开(公告)日：2023-02-16

申请号：US17979099

申请日：2022-11-02

Applicant: Applied Materials, Inc.

Inventor： Shuran Sheng ,  Lin Zhang ,  Joseph C. Werner

IPC: C23C16/50 ,  H01J37/32 ,  H01L21/67 ,  C23C16/458 ,  H01L21/02 ,  H01L27/11551 ,  H01L21/687 ,  H01L27/11578

Abstract: Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.

公开(公告)号：US20220092241A1

公开(公告)日：2022-03-24

申请号：US16948522

申请日：2020-09-22

Applicant: Applied Materials, Inc.

Inventor： Ala Moradian ,  James Omer L'Heureux ,  Shuran Sheng ,  Rohit Mahakali ,  Karthik Ramanathan ,  Lin Zhang ,  Umesh Madhav Kelkar ,  Gopalakrishna B. Prabhu ,  Zheng Yuan ,  Jeonghoon Oh

IPC: G06F30/28 ,  G01D21/02 ,  G01D18/00

Abstract: A method includes receiving measurement data from multiple sensors positioned along a delivery line that delivers a liquid as a gas to one of a gas panel or a processing chamber; simulating, using a computer-generated model, one or more process parameters associated with the delivery line and a plurality of heater jackets positioned around the delivery line; comparing the measurement data with values of the one or more process parameters; and determining, based on at least a threshold deviation between the measurement data and the values of the one or more process parameters, that a fault exists that is associated with maintaining temperature within the delivery line consistent with a gaseous state of the liquid.