公开(公告)号：US11823901B2

公开(公告)日：2023-11-21

申请号：US17174395

申请日：2021-02-12

Applicant: Applied Materials, Inc.

Inventor： Xinming Zhang ,  Abhilash J. Mayur ,  Shashank Sharma ,  Norman L. Tam ,  Matthew Spuller

IPC: H01L21/02 ,  H01L21/30 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L21/02667 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/3003 ,  H10B41/27 ,  H01L21/02164 ,  H01L21/02532 ,  H10B43/27

Abstract: The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume. The substrate includes a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method includes forming a silicon-containing layer over the channel structure to a hydrogen-or-deuterium plasma in the first processing volume at a flow rate of about 10 sccm to about 5000 sccm. The substrate is maintained at a temperature of about 100° C. to about 1100° C. during the exposing, the exposing forming a nucleated substrate. Subsequent to the exposing a thermal anneal operation is performed on the substrate.

公开(公告)号：US11587789B2

公开(公告)日：2023-02-21

申请号：US17123386

申请日：2020-12-16

Applicant: Applied Materials, Inc.

Inventor： Xinming Zhang ,  Abhilash J. Mayur ,  Shashank Sharma ,  Norman L. Tam ,  Matthew Spuller ,  Zeqiong Zhao

IPC: H01L21/02 ,  H01L27/11556 ,  H01L21/30 ,  H01L27/11582

Abstract: The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume being in fluid communication with a plasma source. The substrate can include a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method can also include forming an oxide cap layer over a silicon-containing layer of the channel structure and exposing the oxide cap layer to a hydrogen-or-deuterium radical to nucleate the silicon-containing layer of the channel structures of the substrate. Forming the oxide cap layer and exposing the channel structure with the hydrogen radical occurs in the first processing chamber to form a nucleated substrate. The method can also include positioning the nucleated substrate in a second processing chamber with a second processing volume and heating the nucleated substrate in the second processing chamber.

公开(公告)号：US10014185B1

公开(公告)日：2018-07-03

申请号：US15446573

申请日：2017-03-01

Applicant: Applied Materials, Inc.

Inventor： Liqi Wu ,  Wenyu Zhang ,  Shih Chung Chen ,  Wei V. Tang ,  Leung Kway Lee ,  Xinming Zhang ,  Paul F. Ma

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/764

CPC classification number: H01L21/31122 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/32135 ,  H01L21/764

Abstract: Processing methods comprising oxidizing a metal nitride film to form a metal oxynitride layer and etching the metal oxynitride layer with a metal halide etchant. The metal halide etchant can be, for example, WCl5, WOCl4 or TaCl5. Methods of filling a trench with a seam-free gapfill are also described. A metal nitride film is deposited in the trench to form a seam and pinch-off an opening of the trench. The pinched-off opening is subjected to a directional oxidizing plasma and a metal halide etchant to open the pinched-off top and allow access to the seam.

公开(公告)号：US11859277B2

公开(公告)日：2024-01-02

申请号：US17327118

申请日：2021-05-21

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Kai Wu ,  Seshadri Ganguli ,  Xinming Zhang ,  Norman L. Tam ,  Abhilash Mayur

IPC: C23C16/06 ,  C23C16/14

CPC classification number: C23C16/14

Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

公开(公告)号：US20220372617A1

公开(公告)日：2022-11-24

申请号：US17327118

申请日：2021-05-21

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Kai Wu ,  Seshadri Ganguli ,  Xinming Zhang ,  Norman L. Tam ,  Abhilash Mayur

IPC: C23C16/14

Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.