公开(公告)号：US11515150B2

公开(公告)日：2022-11-29

申请号：US17077926

申请日：2020-10-22

Applicant: Applied Materials, Inc.

Inventor： Michael Wenyoung Tsiang ,  Abdul Aziz Khaja ,  Li-Qun Xia ,  Kevin Hsiao ,  Liangfa Hu ,  Yayun Cheng

IPC: H01L21/02 ,  C23C16/26 ,  H01L21/311

Abstract: Exemplary processing methods may include forming a plasma of a deposition precursor in a processing region of a semiconductor processing chamber. The methods may include adjusting a variable capacitor within 20% of a resonance peak. The variable capacitor may be coupled with an electrode incorporated within a substrate support on which a substrate is seated. The methods may include depositing a material on the substrate.

公开(公告)号：US20220130665A1

公开(公告)日：2022-04-28

申请号：US17077926

申请日：2020-10-22

Applicant: Applied Materials, Inc.

Inventor： Michael Wenyoung Tsiang ,  Abdul Aziz Khaja ,  Li-Qun Xia ,  Kevin Hsiao ,  Liangfa Hu ,  Yayun Cheng

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/26

Abstract: Exemplary processing methods may include forming a plasma of a deposition precursor in a processing region of a semiconductor processing chamber. The methods may include adjusting a variable capacitor within 20% of a resonance peak. The variable capacitor may be coupled with an electrode incorporated within a substrate support on which a substrate is seated. The methods may include depositing a material on the substrate.