公开(公告)号：US20250112052A1

公开(公告)日：2025-04-03

申请号：US18478878

申请日：2023-09-29

Applicant: Applied Materials, Inc.

Inventor： Yi-Hsin CHEN ,  Kevin R. Anglin ,  Yong Yang ,  Solomon Belangedi Basame ,  Yung-Chen Lin ,  Gang Shu

IPC: H01L21/3065

Abstract: Disclosed herein are methods for forming opening ends within semiconductor structures. In some embodiments, a method may include providing an opening formed in a layer of a semiconductor device, wherein the opening comprises a set of sidewalls opposite one another, and first and second end walls connected to the sidewalls, wherein each of the first and second end walls defines a tip end and a set of curved sections extending between the tip end and the set of sidewall. The method may further include performing an ion etch to the opening by delivering an ion beam at a non-zero angle relative to a plane defined by the layer of the semiconductor device, wherein the ion etch comprises a lean-gas chemistry, and wherein the ion etch causes the layer of the semiconductor device to be removed faster along the set of curved sections than along the set of sidewalls.