公开(公告)号：US20240304495A1

公开(公告)日：2024-09-12

申请号：US18118017

申请日：2023-03-06

Applicant: Applied Materials, Inc.

Inventor： Tsung-Han Yang ,  Zhen Liu ,  Yongqian Gao ,  Michael S. Jackson ,  Rongjun Wang

IPC: H01L21/768 ,  C23C16/14 ,  C23C16/455 ,  C23C16/56 ,  H01J37/32

CPC classification number: H01L21/76862 ,  C23C16/14 ,  C23C16/45527 ,  C23C16/56 ,  H01J37/32082 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01J2237/332

Abstract: A method of forming a semiconductor device structure by utilizing a hydrogen plasma treatment to promote selective deposition is disclosed. In some embodiments, the method includes forming a metal layer within at least one feature on the semiconductor device structure. The method includes exposing the metal layer to a hydrogen plasma treatment. The hydrogen plasma treatment preferentially treats the top field and sidewalls while leaving the bottom surface substantially untreated to encourage bottom up metal film growth. In some embodiments, the hydrogen plasma treatment comprises substantially only hydrogen ions.

公开(公告)号：US20240240314A1

公开(公告)日：2024-07-18

申请号：US18402079

申请日：2024-01-02

Applicant: Applied Materials, Inc.

Inventor： Zhen Liu ,  Min-Han Lee ,  Jie Zhang ,  Yongqian Gao ,  Tsung-Han Yang ,  Rongjun Wang

IPC: C23C16/455 ,  C23C16/06 ,  C23C16/56

CPC classification number: C23C16/45525 ,  C23C16/06 ,  C23C16/56

Abstract: Embodiments of the disclosure relate to methods for metal gapfill of a logic device with lower resistivity. Specific embodiments provide integrated separate tungsten PVD processes with plasma-etch to solve the overhang issue caused by tungsten PVD and the high resistivity caused by nucleation.

公开(公告)号：US20240175120A1

公开(公告)日：2024-05-30

申请号：US18512894

申请日：2023-11-17

Applicant: Applied Materials, Inc.

Inventor： Tsung-Han Yang ,  Zhen Liu ,  Yongqian Gao ,  Wenting Hou ,  Rongjun Wang

IPC: C23C16/04 ,  C23C16/06 ,  H01L21/768 ,  H01L23/532

CPC classification number: C23C16/045 ,  C23C16/06 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53266

Abstract: Embodiments of the disclosure relate to methods for metal gapfill with lower resistivity. Specific embodiments provide methods of forming a tungsten gapfill without a high resistance nucleation layer. Some embodiments of the disclosure utilize a nucleation underlayer to promote growth of the metal gapfill.