公开(公告)号：US20240427979A1

公开(公告)日：2024-12-26

申请号：US18752132

申请日：2024-06-24

Applicant: Applied Materials, Inc.

Inventor： Zhiling Dun ,  Allison Yao ,  Jingmin Leng ,  Xinhai Han ,  Deenesh Padhi

IPC: G06F30/398

Abstract: A method includes obtaining, by a processing device, first data indicative of overlay error of a substrate. The method further includes generating second data indicative of first stress uniformity of the substrate based on the first data. The method further includes performing a corrective action based on the second data.

公开(公告)号：US20250116001A1

公开(公告)日：2025-04-10

申请号：US18482560

申请日：2023-10-06

Applicant: Applied Materials, Inc.

Inventor： Allison Yau ,  Manoj Kumar Jana ,  Wen-Shan Lin ,  Zhiling Dun ,  Xinhai Han ,  Deenesh Padhi ,  Jian Li ,  Yuanchang Chen ,  Wenhao Zhang ,  Edward P. Hammond ,  Alexander V. Garachtchenko ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Sathya Ganta

IPC: C23C16/458 ,  C23C16/34 ,  C23C16/40 ,  H01J37/32

Abstract: A semiconductor processing chamber may include a pedestal configured to support a substrate during a plasma-enhanced chemical-vapor deposition (PECVD) process that forms a film on a surface of the substrate. The chamber may also include one or more internal meshes embedded in the pedestal. The one or more internal meshes may be configured to deliver radio-frequency (RF) power to a plasma in the semiconductor processing chamber during the PECVD process. An outer diameter of the one or more internal meshes may be less that a diameter of the substrate. The chamber may further include an RF source configured to deliver the RF power to the one more internal meshes. This configuration may reduce arcing within the processing chamber.