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    Optopairs with temperature compensable electroluminescence for use in optical gas absorption analyzers
    1.
    发明授权
    Optopairs with temperature compensable electroluminescence for use in optical gas absorption analyzers 有权
    具有温度可补偿电致发光的光学头罩用于光学气体吸收分析仪

    公开(公告)号：US08957376B1

    公开(公告)日：2015-02-17

    申请号：US14268360

    申请日：2014-05-02

    Applicant: Bah Holdings LLC

    Inventor： Michael Tkachuk ,  Sergey Suchalkin

    IPC: G01J5/20 ,  G01N21/3504 ,  H01L31/167 ,  H01L31/101

    CPC classification number: G01N21/61 ,  G01J3/0286 ,  G01J3/10 ,  G01J3/108 ,  G01J3/42 ,  G01N21/255 ,  G01N21/3504 ,  G01N2201/062 ,  G01N2201/0625 ,  H01L25/167 ,  H01L31/03046 ,  H01L31/101 ,  H01L31/105 ,  H01L31/167 ,  H01L33/06 ,  H01L33/30 ,  Y02E10/544 ,  Y02P70/521

    Abstract: Optopair for use in sensors and analyzers of gases such as methane, and a fabrication method therefor is disclosed. It comprises: a) an LED, either cascaded or not, having at least one radiation emitting area, whose spectral maximum is de-tuned from the maximum absorption spectrum line of the gas absorption spectral band; and b) a Photodetector, whose responsivity spectral maximum can be either de-tuned from, or alternatively completely correspond to the maximum absorption spectrum line of the absorption spectral band of the gas. Modeling the LED emission and Photodetector responsivity spectra and minimizing the temperature sensitivity of the optopair based on the technical requirements of the optopair signal registration circuitry, once the spectral characteristics of the LED and Photodetector materials and the temperature dependencies of said spectral characteristics are determined, provides the LED de-tuned emission and Photodetector responsivity target peaks respectively.

    Abstract translation: 公开了用于气体如甲烷的传感器和分析器的Optopair及其制造方法。 它包括：a）级联或不具有至少一个辐射发射区域的LED，其光谱最大值从气体吸收光谱带的最大吸收光谱线被去调谐; 和b）光检测器，其响应度谱最大值可以从气体的吸收光谱带的最大吸收光谱线解调或完全对应。 基于Optopair信号配准电路的技术要求，对LED发射和光电检测器响应谱进行建模，并最小化Optopair的温度敏感度，一旦确定了LED和光检测器材料的光谱特性和所述光谱特性的温度依赖性，就提供了 LED解调发光和光电探测器响应度目标峰值分别为。

    PHOTODETECTOR
    2.
    发明申请
    PHOTODETECTOR 有权
    照相机

    公开(公告)号：US20160336361A1

    公开(公告)日：2016-11-17

    申请号：US14714079

    申请日：2015-05-15

    Applicant: BAH Holdings LLC

    Inventor： Sergey Suchalkin ,  Michael Tkachuk

    IPC: H01L27/144 ,  H01L27/146

    CPC classification number: H01L27/1443 ,  H01L27/14649 ,  H01L27/14665 ,  H01L27/14669 ,  H01L27/14694 ,  H01L31/109

    Abstract: There is provided a photodetector, comprising a semiconductor heterostructure having in sequence: a first collection layer having substantially uniform doping of a first doping type; a radiation-absorbing layer having substantially uniform doping of the first doping type and having a band gap less than or equal to that of the first collection layer; and a barrier layer having a band gap greater than that of the radiation-absorbing layer, the top of the valence band of the barrier layer being substantially equal in energy to that of the radiation-absorbing layer where the first doping type is n-type or the bottom of the conduction band of the barrier layer being substantially equal in energy to that of the radiation-absorbing layer where the first doping type is p-type; wherein a first portion of the barrier layer is of the first doping type and a second portion of the barrier layer is of a second doping type, the first portion of the barrier layer being adjacent to the radiation-absorbing layer, forming a heterojunction within the barrier layer which gives rise to a depletion region within each portion of the barrier layer.

    Abstract translation: 提供了一种光电检测器，其包括依次具有的半导体异质结构：具有基本均匀掺杂第一掺杂类型的第一采集层; 辐射吸收层，其具有基本均匀掺杂的第一掺杂类型，并具有小于或等于第一收集层的带隙; 和阻挡层，其带隙大于辐射吸收层的阻挡层，阻挡层的价带的顶部的能量与辐射吸收层的能量基本相等，其中第一掺杂型为n型 或者阻挡层的导带的底部的能量与第一掺杂类型为p型的辐射吸收层的能量基本相等; 其中所述阻挡层的第一部分是第一掺杂型的，并且所述势垒层的第二部分是第二掺杂型，所述阻挡层的所述第一部分与所述辐射吸收层相邻，在所述阻挡层的内部形成异质结 阻挡层，其在阻挡层的每个部分内产生耗尽区。

    Photodetector
    5.
    发明授权
    Photodetector 有权

    公开(公告)号：US09627422B2

    公开(公告)日：2017-04-18

    申请号：US14714079

    申请日：2015-05-15

    Applicant: BAH Holdings LLC

    Inventor： Sergey Suchalkin ,  Michael Tkachuk

    IPC: H01L27/14 ,  H01L27/144 ,  H01L27/146

    CPC classification number: H01L27/1443 ,  H01L27/14649 ,  H01L27/14665 ,  H01L27/14669 ,  H01L27/14694 ,  H01L31/109

    Abstract: There is provided a photodetector, comprising a semiconductor heterostructure having in sequence: a first collection layer having substantially uniform doping of a first doping type; a radiation-absorbing layer having substantially uniform doping of the first doping type and having a band gap less than or equal to that of the first collection layer; and a barrier layer having a band gap greater than that of the radiation-absorbing layer, the top of the valence band of the barrier layer being substantially equal in energy to that of the radiation-absorbing layer where the first doping type is n-type or the bottom of the conduction band of the barrier layer being substantially equal in energy to that of the radiation-absorbing layer where the first doping type is p-type; wherein a first portion of the barrier layer is of the first doping type and a second portion of the barrier layer is of a second doping type, the first portion of the barrier layer being adjacent to the radiation-absorbing layer, forming a heterojunction within the barrier layer which gives rise to a depletion region within each portion of the barrier layer.

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