METHOD TO CONTROL THE ETCHING RATE OF MATERIALS

    公开(公告)号:US20220340429A1

    公开(公告)日:2022-10-27

    申请号:US17241743

    申请日:2021-04-27

    Abstract: A method for etching materials in which organic solvents are added to the etching mixture and combined in a mixing arrangement. When agitated organic materials mix with the etching agent and interact with the underlying material to form a shield around the etched areas that prevents the additional interaction of water with the newly etched areas and enables the etching of silicon oxides (SiOx) but does not oxidize Si. This method leads to milder reactions with less heat generation and avoids the safety hazards associated with conventional etching methods.

    Method to control the etching rate of materials

    公开(公告)号:US12024436B2

    公开(公告)日:2024-07-02

    申请号:US17241743

    申请日:2021-04-27

    CPC classification number: C01B33/023 C03C15/00 C09K13/08 C01P2004/61

    Abstract: A method for etching materials in which organic solvents are added to the etching mixture and combined in a mixing arrangement. When agitated organic materials mix with the etching agent and interact with the underlying material to form a shield around the etched areas that prevents the additional interaction of water with the newly etched areas and enables the etching of silicon oxides (SiOx) but does not oxidize Si. This method leads to milder reactions with less heat generation and avoids the safety hazards associated with conventional etching methods.

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