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    Device with diaphragm valve
    1.
    发明授权
    Device with diaphragm valve 有权
    带隔膜阀的设备

    公开(公告)号：US08584703B2

    公开(公告)日：2013-11-19

    申请号：US12949623

    申请日：2010-11-18

    Applicant: Boris Kobrin ,  Iuliu I. Blaga ,  William Nielsen ,  Shize D. Qi ,  Ezra Van Gelder

    Inventor： Boris Kobrin ,  Iuliu I. Blaga ,  William Nielsen ,  Shize D. Qi ,  Ezra Van Gelder

    IPC: F16K11/20

    CPC classification number: F16K99/0001 ,  B01F11/0071 ,  B01F13/0059 ,  B32B7/02 ,  B32B9/04 ,  B33Y80/00 ,  F16K99/0015 ,  F16K99/0059 ,  F16K2099/008 ,  F16K2099/0084 ,  F16K2099/0094 ,  Y10T137/0318 ,  Y10T137/2213 ,  Y10T137/86453 ,  Y10T137/87249 ,  Y10T156/1039 ,  Y10T428/31504

    Abstract: This invention provides composite plastic articles and methods of making them. The articles can be fluidic or microfluidic devices having fluidic conduits and, optionally, pneumatic conduits that regulate flow in the fluidic conduits. The articles comprise a first substrate coated with a layer of a material that comprises, or onto which have been introduced, reactive groups. For example, the substrate can be a plastic coated with an oxide or a siloxane onto which hydroxyl groups have been introduced. These articles are covalently bonded with other articles comprising reactive groups on their surfaces, for example, polysiloxanes treated to have silanol groups. Certain articles have specified locations on their surfaces that are not bonded to the other piece. For example, the coating can be removed from these locations before bonding. Such locations can be useful as functional elements of various devices, such as valve seats in valves of microfluidic devices.

    Abstract translation: 本发明提供复合塑料制品及其制造方法。 制品可以是具有流体导管的流体或微流体装置，以及可选地调节流体管道中的流动的气动导管。 制品包括涂覆有材料层的第一基材，其包含或已经引入反应性基团的材料层。 例如，基底可以是涂覆有已经引入羟基的氧化物或硅氧烷的塑料。 这些制品与其表面上包含反应性基团的其它制品共价键合，例如被处理为具有硅烷醇基团的聚硅氧烷。 某些物品在其表面上指定了未粘结到另一件的位置。 例如，可以在粘合之前从这些位置去除涂层。 这样的位置可以用作各种装置的功能元件，例如微流体装置的阀中的阀座。

    Fabrication of nanostructured devices
    3.
    发明授权
    Fabrication of nanostructured devices 有权
    纳米结构器件的制造

    公开(公告)号：US08318386B2

    公开(公告)日：2012-11-27

    申请号：US12462625

    申请日：2009-08-06

    Applicant: Boris Kobrin

    Inventor： Boris Kobrin

    IPC: G03F7/00 ,  H01L21/027

    CPC classification number: G03B27/00 ,  G03B9/10 ,  G03F1/50 ,  G03F1/60 ,  G03F7/2035

    Abstract: Embodiments of the invention relate to methods useful in the fabrication of nanostructured devices for optics, energy generation, displays, consumer electronics, life sciences and medicine, construction and decoration. Instead of nanostructuring using colloids of particles, special vacuum deposition methods, laser interference systems (holography), and other low-throughput limited surface area techniques, we suggest to use nanotemplate created by novel nanolithography method, “Rolling mask” lithography. This method allows fast and inexpensive fabrication of nanostructures on large areas of substrate materials in conveyor-type continuous process. Such nanotemplate is then used for selective deposition of functional materials. One of embodiments explains deposition of functional materials in the exposed and developed areas of the substrate. Another embodiment uses selective deposition of the functional material on top of such template. Alternatively, nanotemplate is deposited and patterned on functional material, and then used as an etch mask to transfer nanostructure into the functional material using dry or wet etching process.

    Abstract translation: 本发明的实施例涉及用于制造用于光学，能量产生，显示器，消费电子，生命科学和医学，建筑和装饰的纳米结构设备的方法。 我们建议使用新型纳米光刻法制成的纳米模板，而不是使用粒子的胶体，特殊的真空沉积方法，激光干涉系统（全息术）和其他低通量限制表面积技术进行纳米结构化。 该方法允许在输送机型连续过程中在大面积的基底材料上快速且廉价地制造纳米结构。 然后将这种纳米模板用于功能材料的选择性沉积。 实施例中的一个解释了功能材料在衬底的暴露和显影区域中的沉积。 另一个实施例使用功能材料的选择性沉积在这种模板的顶部。 或者，将纳米模板沉积并在功能材料上图案化，然后用作蚀刻掩模，以使用干蚀刻或湿蚀刻工艺将纳米结构转移到功能材料中。

    Method and apparatus for anisotropic etching
    6.
    发明申请
    Method and apparatus for anisotropic etching 有权
    各向异性蚀刻的方法和装置

    公开(公告)号：US20100173494A1

    公开(公告)日：2010-07-08

    申请号：US12587078

    申请日：2009-10-01

    Applicant: Boris Kobrin

    Inventor： Boris Kobrin

    IPC: H01L21/3065 ,  C23F1/08 ,  H01L21/306

    CPC classification number: H01L21/0337

    Abstract: We suggest a method of anisotropic etching of the substrates, where ultra-thin and conformable layers of materials are used to passivate sidewalls of the etched features. According to an exemplary embodiment such sidewall passivation layer is a Self-assembled monolayer (SAM) material deposited in-situ etching process from a vapor phase. According to another exemplary embodiment such sidewall passivation layer is an inorganic-based material deposited using Atomic Layer Deposition (ALD) method. SAM or ALD layers deposition can be carried out in a pulsing regime alternating with an sputtering and/or etching processes using process gasses with or without plasma. Alternatively, SAM deposition process is carried out continuously, while etch or sputtering process turns on in a pulsing regime. Alternatively, SAM deposition process and etch or sputtering processes are carried out continuously. Both types of suggested passivation materials give advantage over state-of-the-art methods in ability to carefully control thickness and uniformity of the layers, thus enable anisotropic etching process for high aspect ratio nanosize features.

    Abstract translation: 我们建议对基板进行各向异性蚀刻的方法，其中使用超薄和适形的材料层来钝化蚀刻特征的侧壁。 根据示例性实施例，这种侧壁钝化层是从气相沉积原位蚀刻工艺的自组装单层（SAM）材料。 根据另一示例性实施例，这种侧壁钝化层是使用原子层沉积（ALD）方法沉积的基于无机的材料。 SAM或ALD层沉积可以使用具有或不具有等离子体的工艺气体在与溅射和/或蚀刻工艺交替的脉冲状态下进行。 或者，SAM沉积工艺是连续进行的，而蚀刻或溅射工艺在脉冲状态下开启。 或者，SAM沉积工艺和蚀刻或溅射工艺是连续执行的。 两种类型的建议的钝化材料都有优于现有技术的方法，以便仔细地控制层的厚度和均匀性，因此能够实现高纵横比纳米尺度特征的各向异性蚀刻工艺。

    Large area nanopatterning method and apparatus
    8.
    发明申请
    Large area nanopatterning method and apparatus 有权
    大面积纳米图案化方法及装置

    公开(公告)号：US20100123885A1

    公开(公告)日：2010-05-20

    申请号：US12384219

    申请日：2009-04-01

    Applicant: Boris Kobrin

    Inventor： Boris Kobrin

    IPC: G03B27/42

    CPC classification number: G03F7/703 ,  G03B27/42 ,  G03F7/70325 ,  G03F7/7035 ,  G03F7/70358 ,  G03F7/704

    Abstract: Embodiments of the invention relate to methods and apparatus useful in the nanopatterning of large area substrates, where a rotatable mask is used to image a radiation-sensitive material. Typically the rotatable mask comprises a cylinder. The nanopatterning technique makes use of Near-Field photolithography, where the mask used to pattern the substrate is in contact or close proximity with the substrate. The Near-Field photolithography may make use of an elastomeric phase-shifting mask, or may employ surface plasmon technology, where a rotating cylinder surface comprises metal nano holes or nanoparticles.

    Abstract translation: 本发明的实施例涉及在大面积基板的纳米图案中有用的方法和装置，其中使用可旋转掩模来对辐射敏感材料成像。 通常，可旋转掩模包括圆筒。 纳米图案技术利用近场光刻技术，其中用于图案化衬底的掩模与衬底接触或接近。 近场光刻可以使用弹性体相移掩模，或者可以采用表面等离子体激元技术，其中旋转圆柱表面包括金属纳米孔或纳米颗粒。

    Method for controlled application of reactive vapors to produce thin films and coatings
    9.
    发明授权
    Method for controlled application of reactive vapors to produce thin films and coatings 有权
    用于控制应用反应蒸气以产生薄膜和涂层的方法

    公开(公告)号：US07413774B2

    公开(公告)日：2008-08-19

    申请号：US11018173

    申请日：2004-12-21

    Applicant: Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

    Inventor： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

    IPC: C23C16/00

    CPC classification number: B82Y30/00 ,  B05D1/185 ,  B05D1/60 ,  B05D3/142 ,  B82Y40/00 ,  C09D4/00 ,  C23C16/4485 ,  C08G77/04

    Abstract: A vapor phase deposition method and apparatus for the application of thin layers and coatings on substrates. The method and apparatus are useful in the fabrication of electronic devices, micro-electromechanical systems (MEMS), Bio-MEMS devices, micro and nano imprinting lithography, and microfluidic devices. The apparatus used to carry out the method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. The apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the coating formation process. The precise addition of each of the reactants in vapor form is metered into a predetermined set volume at a specified temperature to a specified pressure, to provide a highly accurate amount of reactant.

    Abstract translation: 一种用于在基底上施加薄层和涂层的气相沉积方法和装置。 该方法和装置可用于制造电子设备，微机电系统（MEMS），生物MEMS装置，微型和纳米压印光刻以及微流体装置。 用于实施该方法的装置提供了在涂层形成过程的单个反应步骤中添加精确量的每种待消耗的反应物。 该装置提供在单一步骤期间或当涂层形成过程中存在许多不同的单独步骤时精确添加量的不同组合的反应物。 将蒸气形式的每种反应物的精确加入在指定温度下计量到预定设定体积至指定压力，以提供高精度的反应物。

    Protective thin films for use during fabrication of semiconductors, MEMS, and microstructures
    10.
    发明申请
    Protective thin films for use during fabrication of semiconductors, MEMS, and microstructures 有权
    用于制造半导体，MEMS和微结构的保护薄膜

    公开(公告)号：US20070281492A1

    公开(公告)日：2007-12-06

    申请号：US11447186

    申请日：2006-06-05

    Applicant: Jeffrey D. Chinn ,  Boris Kobrin ,  Romuald Nowak

    Inventor： Jeffrey D. Chinn ,  Boris Kobrin ,  Romuald Nowak

    IPC: H01L21/47

    CPC classification number: H01L21/02126 ,  B81C1/00896 ,  B81C2201/053 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02263 ,  H01L21/3121

    Abstract: A method of protecting a substrate during fabrication of semiconductor, MEMS, or biotechnology devices. The method includes application of a protective thin film which typically has a thickness ranging from about 3 Å to about 1,000 Å, wherein precursor materials used to deposit the protective thin film are organic-based precursors which include at least one fluorine-comprising functional group at one end of a carbon back bone and at least one functional bonding group at the opposite end of a carbon backbone, and wherein the carbon backbone ranges in length from 4 carbons through about 12 carbons. In many applications at least a portion of the protective thin film is removed during fabrication of the devices.

    Abstract translation: 一种在制造半导体，MEMS或生物技术设备期间保护衬底的方法。 该方法包括施加通常具有约3至约1000的厚度的保护性薄膜，其中用于沉积保护性薄膜的前体材料是有机基前体，其包括至少一个含氟官能团 碳骨架的一端和在碳骨架的相对端处的至少一个功能键合基团，其中碳骨架的长度为4个碳到约12个碳原子。 在许多应用中，在制造器件期间，保护薄膜的至少一部分被去除。

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