公开(公告)号：US20140273351A1

公开(公告)日：2014-09-18

申请号：US14198947

申请日：2014-03-06

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

Inventor： Stephane NICOLAS

IPC: B81C1/00

CPC classification number: B81C1/00269 ,  B81C1/00285 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/031

Abstract: A method for encapsulating at least one micro-device, comprising at least the following steps: bonding a face of a first substrate comprising at least one material impermeable to noble gases, in contact with a second substrate comprising glass and with a thickness of about 300 μm or more; etching at least one cavity through the second substrate such that side walls of the cavity are at least partly formed by remaining portions of the second substrate and that an upper wall of the cavity is formed by part of said face of the first substrate; anodic bonding of the remaining portions of the second substrate in contact with a third substrate in which the micro-device is formed, such that the micro-device is encapsulated in the cavity.

Abstract translation: 一种用于封装至少一个微器件的方法，包括至少以下步骤：将包含至少一种不可渗透的材料的第一基底的表面与惰性气体接触，所述第一基底与含有玻璃的第二基底接触并具有约300的厚度 μm以上; 通过所述第二基板蚀刻至少一个空腔，使得所述空腔的侧壁至少部分地由所述第二基板的剩余部分形成，并且所述空腔的上壁由所述第一基板的所述面的一部分形成; 与形成有微器件的第三基板接触的第二基板的剩余部分的阳极接合，使得微器件被封装在空腔中。

公开(公告)号：US20140342487A1

公开(公告)日：2014-11-20

申请号：US14264624

申请日：2014-04-29

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

Inventor： Stephane NICOLAS

IPC: B81C1/00 ,  H01L23/28

CPC classification number: B81C1/00285 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00293 ,  B81C1/00777 ,  B81C2203/0118 ,  B81C2203/0145 ,  G01C21/16 ,  G01C25/00 ,  G01P15/0802 ,  G01P2015/088 ,  G01P2015/0882 ,  H01L21/50 ,  H01L21/52 ,  H01L21/54 ,  H01L23/10 ,  H01L23/28 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A process for encapsulating a microelectronic device, comprising the following steps: make the microelectronic device on a first substrate; make one portion of a first material not permeable to the ambient atmosphere and permeable to a noble gas in a second substrate comprising a second material not permeable to the ambient atmosphere and the noble gas; secure the second substrate to the first substrate, forming at least one cavity inside which the microelectronic device is encapsulated such that said portion of the first material forms part of a wall of the cavity; inject the noble gas into the cavity through the portion of the first material; hermetically seal the cavity towards the ambient atmosphere and the noble gas.

Abstract translation: 一种用于封装微电子器件的方法，包括以下步骤：使微电子器件在第一衬底上; 使一部分第一材料不能渗透到环境大气中，并且可渗透第二衬底中的惰性气体，该第二衬底包括不能通过环境气氛和惰性气体的第二材料; 将所述第二基板固定到所述第一基板，形成至少一个空腔，所述微电子器件被封装在所述腔内，使得所述第一材料的所述部分形成所述腔的壁的一部分; 通过第一材料的一部分将惰性气体注入空腔; 将空腔气密地密封到环境气氛和惰性气体。

公开(公告)号：US20140038364A1

公开(公告)日：2014-02-06

申请号：US13950822

申请日：2013-07-25

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

Inventor： Stephane NICOLAS ,  Xavier BAILLIN

IPC: B81C1/00 ,  H01L21/56

CPC classification number: B81C1/00285 ,  B81B7/02 ,  B81C1/00293 ,  B81C2203/0145 ,  H01L21/56 ,  H01L24/96 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Method of encapsulating at least one microelectronic device, comprising at least the following steps: encapsulate the microelectronic device in a cavity hermetically sealed against air, a cap of the cavity comprising at least one wall permeable to at least one noble gas, inject the noble gas into the cavity through the wall permeable to the noble gas, hermetically seal the cavity against air and the noble gas injected into the cavity.

Abstract translation: 封装至少一个微电子器件的方法，包括至少以下步骤：将微电子器件封装在密封于空气中的空腔中，空腔的帽包括至少一个可渗透至少一种惰性气体的壁，将惰性气体 通过可渗透惰性气体的壁进入空腔，将空腔气密地密封，并将空气和注入空腔的惰性气体密封。