公开(公告)号：US09780084B2

公开(公告)日：2017-10-03

申请号：US15055613

申请日：2016-02-28

Applicant: CSMC Technologies Fab1 Co., Ltd.

Inventor： Yonghai Hu ,  Meng Dai ,  Zhongyu Lin ,  Guangyang Wang

IPC: H01L21/04 ,  H01L27/02 ,  H01L29/66 ,  H01L29/87 ,  H01L21/762 ,  H01L21/8232 ,  H01L21/02 ,  H01L21/265 ,  H01L21/3205 ,  H01L29/40

CPC classification number: H01L27/0255 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/26513 ,  H01L21/32055 ,  H01L21/76202 ,  H01L21/76224 ,  H01L21/8232 ,  H01L27/0248 ,  H01L29/402 ,  H01L29/66121 ,  H01L29/87

Abstract: An electrostatic discharge protection structure includes: substrate of a first type of conductivity, well region of a second type of conductivity, substrate contact region in the substrate and of the first type of conductivity, well contact region in the well region and of the second type of conductivity, substrate counter-doped region between the substrate contact region and the well contact region and of the second type of conductivity, well counter-doped region between the substrate contact region and the well contact region and of the first type of conductivity, communication region at a lateral junction between the substrate and the well region, first isolation region between the substrate counter-doped region and the communication region, second isolation region between the well counter-doped region and the communication region, oxide layer having one end on the first isolation region and another end on the substrate, and field plate structure on the oxide layer.

公开(公告)号：US20140138740A1

公开(公告)日：2014-05-22

申请号：US14130481

申请日：2013-04-27

Applicant: CSMC Technologies Fab1 Co., Ltd.

Inventor： Yonghai Hu ,  Meng Dai ,  Zhongyu Lin ,  Guangyang Wang

IPC: H01L27/02 ,  H01L21/762 ,  H01L21/8232

CPC classification number: H01L27/0255 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/26513 ,  H01L21/32055 ,  H01L21/76202 ,  H01L21/76224 ,  H01L21/8232 ,  H01L27/0248 ,  H01L29/402 ,  H01L29/66121 ,  H01L29/87

Abstract: An electrostatic discharge protection structure includes: substrate of a first type of conductivity, well region of a second type of conductivity, substrate contact region in the substrate and of the first type of conductivity, well contact region in the well region and of the second type of conductivity, substrate counter-doped region between the substrate contact region and the well contact region and of the second type of conductivity, well counter-doped region between the substrate contact region and the well contact region and of the first type of conductivity, communication region at a lateral junction between the substrate and the well region, first isolation region between the substrate counter-doped region and the communication region, second isolation region between the well counter-doped region and the communication region, oxide layer having one end on the first isolation region and another end on the substrate, and field plate structure on the oxide layer.

Abstract translation: 静电放电保护结构包括：第一导电类型的衬底，第二导电类型的阱区，衬底中的衬底接触区域和第一类型的导电性，阱区和第二类型的阱接触区域 在衬底接触区域和阱接触区域之间的导电性，衬底反掺杂区域和第二类型的导电性，衬底接触区域和阱接触区域之间的良好的反掺杂区域以及第一类型的导电性，通信 在衬底和阱区之间的横向结合处的区域，衬底反掺杂区域和连通区域之间的第一隔离区域，阱对掺杂区域和连通区域之间的第二隔离区域， 第一隔离区和衬底上的另一端，以及氧化物层上的场板结构。

公开(公告)号：US20160181237A1

公开(公告)日：2016-06-23

申请号：US15055613

申请日：2016-02-28

Applicant: CSMC Technologies Fab1 Co., Ltd.

Inventor： Yonghai Hu ,  Meng Dai ,  Zhongyu Lin ,  Guangyang Wang

IPC: H01L27/02 ,  H01L21/762 ,  H01L29/66 ,  H01L29/40 ,  H01L21/3205 ,  H01L21/265 ,  H01L21/02

CPC classification number: H01L27/0255 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/26513 ,  H01L21/32055 ,  H01L21/76202 ,  H01L21/76224 ,  H01L21/8232 ,  H01L27/0248 ,  H01L29/402 ,  H01L29/66121 ,  H01L29/87

Abstract: An electrostatic discharge protection structure includes: substrate of a first type of conductivity, well region of a second type of conductivity, substrate contact region in the substrate and of the first type of conductivity, well contact region in the well region and of the second type of conductivity, substrate counter-doped region between the substrate contact region and the well contact region and of the second type of conductivity, well counter-doped region between the substrate contact region and the well contact region and of the first type of conductivity, communication region at a lateral junction between the substrate and the well region, first isolation region between the substrate counter-doped region and the communication region, second isolation region between the well counter-doped region and the communication region, oxide layer having one end on the first isolation region and another end on the substrate, and field plate structure on the oxide layer.

Abstract translation: 静电放电保护结构包括：第一导电类型的衬底，第二导电类型的阱区，衬底中的衬底接触区域和第一类型的导电性，阱区和第二类型的阱接触区域 在衬底接触区域和阱接触区域之间的导电性，衬底反掺杂区域和第二类型的导电性，衬底接触区域和阱接触区域之间的良好的反掺杂区域以及第一类型的导电性，通信 在衬底和阱区之间的横向结合处的区域，衬底反掺杂区域和连通区域之间的第一隔离区域，阱对掺杂区域和连通区域之间的第二隔离区域， 第一隔离区和衬底上的另一端，以及氧化物层上的场板结构。

公开(公告)号：US09343454B2

公开(公告)日：2016-05-17

申请号：US14130481

申请日：2013-04-27

Applicant: CSMC Technologies Fab1 Co., Ltd.

Inventor： Yonghai Hu ,  Meng Dai ,  Zhongyu Lin ,  Guangyang Wang

IPC: H01L29/66 ,  H01L21/338 ,  H01L27/02 ,  H01L29/87 ,  H01L21/762 ,  H01L21/8232

CPC classification number: H01L27/0255 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/26513 ,  H01L21/32055 ,  H01L21/76202 ,  H01L21/76224 ,  H01L21/8232 ,  H01L27/0248 ,  H01L29/402 ,  H01L29/66121 ,  H01L29/87

Abstract: An electrostatic discharge protection structure includes: substrate of a first type of conductivity, well region of a second type of conductivity, substrate contact region in the substrate and of the first type of conductivity, well contact region in the well region and of the second type of conductivity, substrate counter-doped region between the substrate contact region and the well contact region and of the second type of conductivity, well counter-doped region between the substrate contact region and the well contact region and of the first type of conductivity, communication region at a lateral junction between the substrate and the well region, first isolation region between the substrate counter-doped region and the communication region, second isolation region between the well counter-doped region and the communication region, oxide layer having one end on the first isolation region and another end on the substrate, and field plate structure on the oxide layer.

Abstract translation: 静电放电保护结构包括：第一导电类型的衬底，第二导电类型的阱区，衬底中的衬底接触区域和第一类型的导电性，阱区和第二类型的阱接触区域 在衬底接触区域和阱接触区域之间的导电性，衬底反掺杂区域和第二类型的导电性，衬底接触区域和阱接触区域之间的良好的反掺杂区域以及第一类型的导电性，通信 在衬底和阱区之间的横向结合处的区域，衬底反掺杂区域和连通区域之间的第一隔离区域，阱对掺杂区域和连通区域之间的第二隔离区域， 第一隔离区和衬底上的另一端，以及氧化物层上的场板结构。