公开(公告)号：US12300712B2

公开(公告)日：2025-05-13

申请号：US17938838

申请日：2022-10-07

Applicant: California Institute of Technology

Inventor： David Z. Ting ,  Sam A. Keo ,  Arezou Khoshakhlagh ,  Alexander Soibel ,  Sarath D. Gunapala

IPC: H01L27/146

Abstract: Disclosed herein is an infrared detector. The detector includes a plurality of pixels. Each pixel includes an n-type semiconductor top contact layer, a p-type semiconductor layer electrically connected to the n-type top contact layer to form a top p-n junction, a unipolar electron barrier electrically connected to the p-type semiconductor layer, a bottom absorber, and an n-type semiconductor bottom contact layer electrically connected to the bottom absorber. The unipolar electron barrier is positioned between the p-type semiconductor layer and the bottom absorber.

公开(公告)号：US20230114881A1

公开(公告)日：2023-04-13

申请号：US17938838

申请日：2022-10-07

Applicant: California Institute of Technology

Inventor： David Z. Ting ,  Sam A. Keo ,  Arezou Khoshakhlagh ,  Alexander Soibel ,  Sarath D. Gunapala

IPC: H01L27/146

Abstract: Disclosed herein is an infrared detector. The detector includes a plurality of pixels. Each pixel includes an n-type semiconductor top contact layer, a p-type semiconductor layer electrically connected to the n-type top contact layer to form a top p-n junction, a unipolar electron barrier electrically connected to the p-type semiconductor layer, a bottom absorber, and an n-type semiconductor bottom contact layer electrically connected to the bottom absorber. The unipolar electron barrier is positioned between the p-type semiconductor layer and the bottom absorber.