公开(公告)号：US20230312936A1

公开(公告)日：2023-10-05

申请号：US18331261

申请日：2023-06-08

Applicant: CubicPV Inc.

Inventor： Michael Irwin ,  Erin Sanehira

IPC: C09D1/00 ,  B05D3/02 ,  C03C17/25

CPC classification number: C09D1/00 ,  B05D3/0254 ,  C03C17/25 ,  C03C2218/32 ,  C03C2217/217 ,  C03C2218/113

Abstract: A method for preparing a nickel oxide precursor ink comprising: preparing a solvent comprising diols and alcohol amines; adding nickel nitrate into the solvent to form a nickel nitrate containing solution; adding at least one metal acetate into the nickel nitrate containing solution to form a nickel nitrate and metal acetate containing solution; adding water to the nickel nitrate and metal acetate containing solution to form a nickel oxide precursor mixture; heating the nickel oxide precursor mixture to 60 to 75 Celsius; and cooling the nickel oxide precursor mixture to form the nickel oxide precursor ink.

公开(公告)号：US12084580B2

公开(公告)日：2024-09-10

申请号：US18331261

申请日：2023-06-08

Applicant: CubicPV Inc.

Inventor： Michael Irwin ,  Erin Sanehira

IPC: C09D1/00 ,  B05D3/02 ,  C03C17/25

CPC classification number: C09D1/00 ,  B05D3/0254 ,  C03C17/25 ,  C03C2217/217 ,  C03C2218/113 ,  C03C2218/32

Abstract: A method for forming a nickel oxide layer is disclosed herein. In some embodiments, a method includes depositing a nickel oxide precursor ink on a substrate, wherein the nickel oxide precursor ink comprises a solvent comprising diols, alcohol amines, and water, Ni(NO3)2·6H2O, and at least one metal acetate selected from the group consisting of Ni(CH3CO2)2·4H2O and Cu(CH3CO2)2·1H2O, annealing the nickel oxide precursor ink at a temperature between 250° to 400° Celsius for between 10 minutes and 6 hours to form a nickel oxide layer, and cooling the nickel oxide layer.

公开(公告)号：US20230284466A1

公开(公告)日：2023-09-07

申请号：US18298771

申请日：2023-04-11

Applicant: CubicPV Inc.

Inventor： Michael Irwin ,  Michael Holland

IPC: H10K30/10 ,  H10K85/30

CPC classification number: H10K30/10 ,  H10K85/30

Abstract: A method for manufacturing a photovoltaic device. The method comprises fabricating a first photovoltaic device portion with a first photoactive layer having a first face comprising a first perovskite precursor material; fabricating a second photovoltaic device portion with a second photoactive layer having a second face comprising a second perovskite material or a second perovskite precursor material; arranging the first photovoltaic device portion and the second photovoltaic device portion such that the first face is in contact with the second face; and compressing the first photovoltaic device portion and the second photovoltaic device portion at a pressure sufficient to fuse the first perovskite precursor material to the second perovskite material or the second perovskite precursor material.

公开(公告)号：US20240397736A1

公开(公告)日：2024-11-28

申请号：US18797403

申请日：2024-08-07

Applicant: CubicPV Inc.

Inventor： Michael Irwin ,  Michael Holland

IPC: H10K30/10 ,  H10K85/30

Abstract: A method for manufacturing a photovoltaic device. The method comprises fabricating a first photovoltaic device portion with a first photoactive layer having a first face comprising a first perovskite precursor material; fabricating a second photovoltaic device portion with a second photoactive layer having a second face comprising a second perovskite material or a second perovskite precursor material; arranging the first photovoltaic device portion and the second photovoltaic device portion such that the first face is in contact with the second face; and compressing the first photovoltaic device portion and the second photovoltaic device portion at a pressure sufficient to fuse the first perovskite precursor material to the second perovskite material or the second perovskite precursor material.

公开(公告)号：US12089425B2

公开(公告)日：2024-09-10

申请号：US18298771

申请日：2023-04-11

Applicant: CubicPV Inc.

Inventor： Michael Irwin ,  Michael Holland

IPC: H10K30/10 ,  H10K85/30

CPC classification number: H10K30/10 ,  H10K85/30

Abstract: A method for manufacturing a photovoltaic device. The method comprises fabricating a first photovoltaic device portion with a first photoactive layer having a first face comprising a first perovskite precursor material; fabricating a second photovoltaic device portion with a second photoactive layer having a second face comprising a second perovskite material or a second perovskite precursor material; arranging the first photovoltaic device portion and the second photovoltaic device portion such that the first face is in contact with the second face; and compressing the first photovoltaic device portion and the second photovoltaic device portion at a pressure sufficient to fuse the first perovskite precursor material to the second perovskite material or the second perovskite precursor material.

公开(公告)号：US11659723B2

公开(公告)日：2023-05-23

申请号：US16682254

申请日：2019-11-13

Applicant: CUBICPV INC.

Inventor： Michael Irwin ,  Michael Holland

IPC: H01L51/42 ,  H01L51/00

CPC classification number: H01L51/4213 ,  H01L51/0077

Abstract: A method for manufacturing a photovoltaic device includes fabricating a first photovoltaic device portion with a first perovskite material layer having a first face, and fabricating a second photovoltaic device portion with a second perovskite material layer having a second face. Then first photovoltaic device portion and the second photovoltaic device portion are arranged such that the first face is in contact with the second face. Finally, the first photovoltaic device portion and second photovoltaic device portion are compressed at a pressure sufficient to fuse the first perovskite material to the second perovskite material.