Method for producing ceramic circuit board

    公开(公告)号:US11160172B2

    公开(公告)日:2021-10-26

    申请号:US16477628

    申请日:2018-01-16

    Abstract: A method for producing a ceramic circuit board including a ceramic substrate and a metal circuit formed on the ceramic substrate. The disclosed method includes a step of forming the first metal layer in contact with the ceramic substrate by spraying a first metal powder containing at least either of aluminum particles or aluminum alloy particles together with an inert gas onto a surface of a ceramic substrate from a nozzle, in which the first metal powder is heated to from 10° C. to 270° C. and then ejected from the nozzle 10 and a gauge pressure of the inert gas at an inlet of the nozzle 10 is from 1.5 to 5.0 MPa, a step of subjecting the first metal layer to a heat treatment in an inert gas atmosphere, and the like.

    Power module
    4.
    发明授权

    公开(公告)号:US11094648B2

    公开(公告)日:2021-08-17

    申请号:US16636184

    申请日:2018-07-30

    Abstract: A power module includes a base plate, a ceramic insulating substrate bonded on the base plate, and a semiconductor element bonded on the ceramic insulating substrate, wherein a surface of the base plate on a side opposite to the ceramic insulating substrate has a warp with a convex shape, and a linear thermal expansion coefficient α1 (×10−6/K) of the base plate and a linear thermal expansion coefficient α2 (×10−6/K) of the ceramic insulating substrate when a temperature decreases in the range of 25° C. to 150° C. satisfy the following Expression (1).  α ⁢ ⁢ 1 - α ⁢ ⁢ 2  ( α ⁢ ⁢ 1 + α ⁢ ⁢ 2 ) ⁢ / ⁢ 2 × 100 ≤ 10 ( 1 )

    Ceramic circuit board
    5.
    发明授权

    公开(公告)号:US11096278B2

    公开(公告)日:2021-08-17

    申请号:US16636239

    申请日:2018-07-30

    Abstract: A ceramic circuit board includes a ceramic substrate and metal layers provided to both surfaces of the ceramic substrate and containing Al and/or Cu, wherein a measurement value α1 of a linear thermal expansion coefficient at 25° C. to 150° C. is 5×10−6 to 9×10−6/K, a ratio α1/α2 of the α1 to a theoretical value α2 of the linear thermal expansion coefficient at 25° C. to 150° C. is 0.7 to 0.95, and at least one of the metal layers forms a metal circuit.

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