公开(公告)号：US20170302182A1

公开(公告)日：2017-10-19

申请号：US15491307

申请日：2017-04-19

Applicant: DENSO CORPORATION

Inventor： Hiroshi SHIMIZU ,  Mitsunori KIMURA ,  Kengo MOCHIKI ,  Yuu YAMAHIRA ,  Tetsuya MATSUOKA ,  Kazuma FUKUSHIMA ,  Yasuyuki OHKOUCHI

IPC: H02M3/158 ,  H01L29/20 ,  H01L25/07 ,  H01L29/16 ,  H01L29/861 ,  H01L29/739

CPC classification number: H02M3/158 ,  H01L25/07 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/7393 ,  H01L29/861 ,  H02M1/088 ,  H02M7/5387

Abstract: A semiconductor module includes an IGBT and a MOSFET. The IGBT is made of a silicon semiconductor. The MOSFET is made of a wide-bandgap semiconductor having a wider bandgap than the silicon semiconductor. The IGBT and the MOSFET are connected in parallel to each other to form a semiconductor element pair. The IGBT has a greater surface area than the MOSFET. The semiconductor module is configured to operate in a region that includes a low-current region and a high-current region. Electric current flowing through the semiconductor element pair is higher in the high-current region than in the low-current region. In the low-current region, the on-resistance of the MOSFET is lower than the on-resistance of the IGBT. In contrast, in the high-current region, the on-resistance of the IGBT is lower than the on-resistance of the MOSFET.

公开(公告)号：US20170301662A1

公开(公告)日：2017-10-19

申请号：US15488818

申请日：2017-04-17

Applicant: DENSO CORPORATION

Inventor： Mitsunori KIMURA ,  Hiroshi SHIMIZU ,  Kengo MOCHIKI ,  Yasuyuki OHKOUCHI ,  Yuu YAMAHIRA ,  Tetsuya MATSUOKA ,  Kazuma FUKUSHIMA

IPC: H01L25/18 ,  H01L23/495 ,  H01L23/433 ,  H01L23/00 ,  H01L25/07 ,  H01L25/11 ,  H01L23/473

Abstract: A power conversion apparatus performs power conversion. The power conversion apparatus includes a semiconductor module and a cooler. The semiconductor module includes an insulated-gate bipolar transistor, a metal-oxide-semiconductor field-effect transistor, and a lead frame. The insulated-gate bipolar transistor and the metal-oxide-semiconductor field-effect transistor are connected in parallel to each other and provided on the same lead frame. The cooler has a coolant flow passage. The coolant flow passage extends such that the coolant flow passage and the lead frame of the semiconductor module are opposed to each other. The semiconductor module is configured such that the metal-oxide-semiconductor field-effect transistor is not disposed further downstream than the insulated-gate bipolar transistor in a flow direction of a coolant in the coolant flow passage of the cooler.

公开(公告)号：US20170301614A1

公开(公告)日：2017-10-19

申请号：US15491028

申请日：2017-04-19

Applicant: DENSO CORPORATION

Inventor： Mitsunori KIMURA ,  Hiroshi SHIMIZU ,  Kengo MOCHIKI ,  Yasuyuki OHKOUCHI ,  Yuu YAMAHIRA ,  Tetsuya MATSUOKA ,  Kazuma FUKUSHIMA

IPC: H01L23/495 ,  H01L27/06 ,  H01L23/31 ,  H01L23/00 ,  H02P27/06 ,  H02M7/537

CPC classification number: H01L23/49568 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/4012 ,  H01L23/473 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/32 ,  H01L25/07 ,  H01L27/0623 ,  H01L2224/32245 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/13055 ,  H01L2924/13091 ,  H02M1/088 ,  H02M7/003 ,  H02M7/537 ,  H02M2001/327 ,  H02P27/06

Abstract: A semiconductor module of an electric power converter includes an IGBT and a MOSFET which are connected in parallel to each other and provided on the same lead frame, either one of the IGBT and the MOSFET is a first switching element and the remaining one is a second switching element, and the conduction path of the second switching element is disposed at a position that is separated from a conduction path of the first switching element in the same lead frame.

公开(公告)号：US20200185953A1

公开(公告)日：2020-06-11

申请号：US16709967

申请日：2019-12-11

Applicant: DENSO CORPORATION

Inventor： Hiroshi SHIMIZU ,  Ryuji OMATA ,  Daigo NOBE ,  Makoto NAKAMURA

IPC: H02J7/04 ,  H02M7/5387 ,  B60L53/53 ,  B60L53/20

Abstract: A charging system charges, through an external charger, a first voltage source and a second voltage source that supply electric power to a rotating electric machine that includes coils of phases. A first inverter is connected to respective first ends of the coils and the first voltage source. A second inverter is connected to respective second ends of the coils and the second voltage source. A first switch is provided on a first power supply line that connects a high potential side of the first voltage source and a first external connection terminal that is connected to a high potential side of the external charger. A second switch is provided on a second power supply line that connects a low potential side of the second voltage source and a second external connection terminal that is connected to a low potential side of the external charger.

公开(公告)号：US20200176168A1

公开(公告)日：2020-06-04

申请号：US16784514

申请日：2020-02-07

Applicant: DENSO CORPORATION

Inventor： Ryota TANABE ,  Tatsuya MURAKAMI ,  Hiroshi SHIMIZU ,  Naoki HIRASAWA

IPC: H01F27/10 ,  H01F27/255 ,  H02M7/48 ,  H01F37/00

Abstract: A reactor cooling structure includes: a plurality of reactors that are stacked on one another, each reactor including a coil configured to produce magnetic flux when energized; and a cooling mechanism that cools the plurality of reactors, wherein each of the reactors has an exterior member that has: heat radiation surfaces respectively on both sides of the corresponding one of the reactors in a stacking direction of the stacked reactors i.e. a first direction, the heat radiation surfaces of the exterior member of each of the reactors being arranged to cool the coil of the corresponding one of the reactors; the cooling mechanism includes a cooling flow path for directly cooling the first and second heat radiation surfaces of the exterior member of each of the reactors by a refrigerant.

公开(公告)号：US20190280548A1

公开(公告)日：2019-09-12

申请号：US16423737

申请日：2019-05-28

Applicant: DENSO CORPORATION

Inventor： Yoshimitsu TAKAHASHI ,  Mitsutaka ITO ,  Hiroshi SHIMIZU ,  Takeshi ENDO

IPC: H02K3/28 ,  H02K1/16 ,  H02K1/27 ,  H02K7/00 ,  H02K11/33 ,  H02K21/14

Abstract: In a rotating electric machine, a stator includes a stator core and three phase windings. In the stator core, a plurality of slots arrayed in a circumferential direction are formed. The three phase windings are wound around the stator core. The three phase windings include first, second, and third windings. One end of the first winding is provided further towards an outer side of the stator in a radial direction than a division line that divides the slot into two in the radial direction of the stator. One end of the second winding is provided further towards an inner side of the stator in the radial direction than the division line. One end of the third winding is provided between the one end of the first winding and the one end of the second winding relative to the radial direction of the stator, with at least a single slot therebetween.

公开(公告)号：US20170302153A1

公开(公告)日：2017-10-19

申请号：US15491366

申请日：2017-04-19

Applicant: DENSO CORPORATION

Inventor： Kengo MOCHIKI ,  Mitsunori KIMURA ,  Hiroshi SHIMIZU ,  Yasuyuki OHKOUCHI ,  Yuu YAMAHIRA ,  Tetsuya MATSUOKA ,  Kazuma FUKUSHIMA

IPC: H02M1/088 ,  H01L27/06 ,  H02M3/158 ,  H03K17/081 ,  H02M7/537 ,  H02P27/06

CPC classification number: H02M1/088 ,  B60L3/003 ,  B60L3/0084 ,  B60L15/007 ,  H01L27/0623 ,  H01L2224/05554 ,  H01L2224/48247 ,  H02M1/08 ,  H02M3/158 ,  H02M7/003 ,  H02M7/537 ,  H02M7/53871 ,  H02M2001/0054 ,  H02P27/06 ,  H03K17/0412 ,  H03K17/08116 ,  H03K17/127 ,  H03K17/6871 ,  H03K2217/0036

Abstract: A power conversion apparatus includes a semiconductor module including a semiconductor device and a control circuit unit controlling the semiconductor module. The semiconductor module has main and subsidiary semiconductor devices connected in parallel. The control circuit unit performs control such that the subsidiary semiconductor device is turned on after the main semiconductor device is turned on, and the main semiconductor device is turned off after the subsidiary semiconductor device is turned off. The control circuit unit performs control such that, one of the turn-on and turn-off switching timings has a switching speed faster than that of the other of the switching timings. The semiconductor module is configured such that, at a high-speed switching timing, an induction current directed to turn off the subsidiary semiconductor device is generated in a control terminal of the subsidiary semiconductor device depending on temporal change of a main current flowing to the main semiconductor device.

公开(公告)号：US20240388119A1

公开(公告)日：2024-11-21

申请号：US18784091

申请日：2024-07-25

Applicant: DENSO CORPORATION

Inventor： Hiroshi SHIMIZU ,  Harumi HORIHATA ,  Sadahiro AKAMA

IPC: H02J7/34 ,  H02J7/00 ,  H02M1/32 ,  H02M7/48

Abstract: A discharge circuit discharges a smoothing capacitor that smooths a DC voltage. The discharge circuit incudes a resistive element connected in parallel with the smoothing capacitor, a transistor connected in series with the resistive element, and an adjustment circuit configured to adjust a voltage applied to a gate terminal of the transistor to turn and keep the transistor half on for a predefined time and then turn the transistor fully on, when discharging the smoothing capacitor through the resistive element and the transistor.

公开(公告)号：US20240380310A1

公开(公告)日：2024-11-14

申请号：US18783963

申请日：2024-07-25

Applicant: DENSO CORPORATION

Inventor： Hiroshi SHIMIZU ,  Harumi HORIHATA ,  Sadahiro AKAMA

IPC: H02M1/32 ,  H02M7/48

Abstract: A discharge circuit discharges a smoothing capacitor that smooths a DC voltage through a plurality of resistive elements mounted on a substrate. The discharge circuit includes a series connection of at least three resistive elements spaced apart from each other in a first direction and connected in series by wires. The resistive element positioned more centrally in the first direction, included in the series connection, has a lower resistance value. The resistive elements adjacent to each other in the first direction and included in the series connection are displaced from each other in a second direction perpendicular to the first direction.

公开(公告)号：US20180145672A1

公开(公告)日：2018-05-24

申请号：US15815202

申请日：2017-11-16

Applicant: DENSO CORPORATION

Inventor： Hiroshi SHIMIZU ,  Kengo MOCHIKI ,  Yuu YAMAHIRA ,  Tetsuya MATSUOKA ,  Kazuma FUKUSHIMA ,  Mitsunori KIMURA ,  Yasuyuki OHKOUCHI

IPC: H03K17/0412 ,  H03K17/12 ,  H03K17/082 ,  H03K17/14 ,  H03K17/16

CPC classification number: H03K17/04126 ,  H02M3/158 ,  H02M2001/0048 ,  H02M2001/007 ,  H03K17/04123 ,  H03K17/0822 ,  H03K17/0828 ,  H03K17/122 ,  H03K17/127 ,  H03K17/14 ,  H03K17/161 ,  H03K17/168 ,  H03K2017/0806

Abstract: In a driving apparatus for switches connected in parallel to each other, drivers respectively turn on or off the switches. A temperature obtainer obtains a value of a temperature parameter correlating with a temperature of at least one of the first and second switches. A selector selects at least one of the switches as at least one drive target switch. A driver causes at least one of the drivers to turn on the at least one drive target switch during an on duration and thereafter turn off the at least one drive target switch in each target switching cycle. The selector adjusts the number of the selected at least one drive target switch based on the value of the temperature parameter.