公开(公告)号：US20240278380A1

公开(公告)日：2024-08-22

申请号：US18571054

申请日：2022-06-14

Applicant: EBARA CORPORATION

Inventor： Shinro OTA ,  Masahiro HATAKEYAMA

IPC: B24B37/013 ,  B24B37/04 ,  B24B37/10

CPC classification number: B24B37/013 ,  B24B37/042 ,  B24B37/10

Abstract: The present invention relates to a polishing method and a polishing apparatus for polishing a substrate, such as a wafer. This method includes: polishing a substrate W; producing a torque waveform while polishing the substrate W; and selecting one reference torque waveform from a plurality of reference torque waveforms accumulated before the polishing of the substrate W. Polishing the substrate W includes an asperity polishing process and a flat polishing process. The asperity polishing process includes: determining film thicknesses at measurements point on the substrate W based on a film thickness of reference film data calculated based on a first relational expression; comparing the torque waveform and the selected reference torque waveform; and determining whether the asperity polishing process should be terminated. The flat polishing process includes determining film thicknesses at measurement points on the substrate W based on a film thickness of reference film data calculated based on a second relational expression.

公开(公告)号：US20240238934A1

公开(公告)日：2024-07-18

申请号：US18557069

申请日：2022-04-11

Applicant: EBARA CORPORATION

Inventor： Shinro OTA

IPC: B24B37/013

CPC classification number: B24B37/013

Abstract: The present invention relates to a polishing apparatus and a polishing method. The polishing apparatus includes an operation controller (9) configured to control a pressure in each of a plurality of pressure chambers. The operation controller (9) is configured to control the pressure in the pressure chamber of the polishing head (1) corresponding to a specific position so that a difference between a control target film thickness value and an average film thickness value of the entire substrate is reduced.