公开(公告)号：US09842783B2

公开(公告)日：2017-12-12

申请号：US15384592

申请日：2016-12-20

Applicant: EBARA CORPORATION

Inventor： Toshifumi Kimba

IPC: B24B37/20 ,  H01L21/306 ,  H01L21/66

CPC classification number: H01L22/26 ,  B24B37/013 ,  B24B37/20 ,  B24B49/04 ,  B24B49/12 ,  H01L21/30625

Abstract: A polishing method capable of obtaining an accurate thickness of a silicon layer during polishing of a substrate and determining an accurate polishing end point of the substrate based on the thickness of the silicon layer obtained. The method includes: calculating relative reflectance by dividing the measured intensity of the infrared ray by predetermined reference intensity; producing spectral waveform representing relationship between the relative reflectance and wavelength of the infrared ray; performing a Fourier transform process on the spectral waveform to determine a thickness of the silicon layer and a corresponding strength of frequency component; and determining a polishing end point of the substrate based on a point of time when the determined thickness of the silicon layer has reached a predetermined target value.

公开(公告)号：US09406480B2

公开(公告)日：2016-08-02

申请号：US14596447

申请日：2015-01-14

Applicant: EBARA CORPORATION

Inventor： Nobuharu Noji ,  Tohru Satake ,  Hirosi Sobukawa ,  Toshifumi Kimba ,  Masahiro Hatakeyama ,  Shoji Yoshikawa ,  Takeshi Murakami ,  Kenji Watanabe ,  Tsutomu Karimata ,  Kenichi Suematsu ,  Yutaka Tabe ,  Ryo Tajima ,  Keiichi Tohyama

IPC: H01J37/28 ,  G01N23/22 ,  G01N23/225 ,  H01J37/20 ,  H01J37/05 ,  H01L21/683

CPC classification number: H01J37/20 ,  G01N23/2204 ,  G01N23/225 ,  H01J37/05 ,  H01J37/28 ,  H01J2237/202 ,  H01J2237/2441 ,  H01J2237/2446 ,  H01J2237/2801 ,  H01J2237/2817 ,  H01L21/6833 ,  H01L2223/54466

Abstract: A substrate is irradiated by primary electrons and secondary electrons generated from the substrate are detected by a detector. A reference die is placed on the stage to obtain a pattern matching template image including feature coordinates of the reference die. A pattern matching is performed with an arbitrary die in a row or column including the reference die using the template image to obtain feature coordinates of the arbitrary die. An angle of misalignment is calculated between the direction of the row or column including the reference die and one of the directions of movement of the substrate on the basis of the feature coordinates of the arbitrary die and those of the reference die. The stage is rotated to correct the angle of misalignment to conform the direction of the row or column including the reference die with the one of the directions of movement of the substrate.

公开(公告)号：US08946631B2

公开(公告)日：2015-02-03

申请号：US14156140

申请日：2014-01-15

Applicant: Ebara Corporation

Inventor： Nobuharu Noji ,  Tohru Satake ,  Hirosi Sobukawa ,  Toshifumi Kimba ,  Masahiro Hatakeyama ,  Shoji Yoshikawa ,  Takeshi Murakami ,  Kenji Watanabe ,  Tsutomu Karimata ,  Kenichi Suematsu ,  Yutaka Tabe ,  Ryo Tajima ,  Keiichi Tohyama

IPC: G01N23/225 ,  H01J37/28 ,  H01L21/683

CPC classification number: H01J37/20 ,  G01N23/2204 ,  G01N23/225 ,  H01J37/05 ,  H01J37/28 ,  H01J2237/202 ,  H01J2237/2441 ,  H01J2237/2446 ,  H01J2237/2801 ,  H01J2237/2817 ,  H01L21/6833 ,  H01L2223/54466

Abstract: A substrate is irradiated by primary electrons and secondary electrons generated from the substrate are detected by a detector. A reference die is placed on the stage to obtain a pattern matching template image including feature coordinates of the reference die. A pattern matching is performed with an arbitrary die in a row or column including the reference die using the template image to obtain feature coordinates of the arbitrary die. An angle of misalignment is calculated between the direction of the row or column including the reference die and one of the directions of movement of the substrate on the basis of the feature coordinates of the arbitrary die and those of the reference die. The stage is rotated to correct the angle of misalignment to conform the direction of the row or column including the reference die with the one of the directions of movement of the substrate.

Abstract translation: 用一次电子照射衬底，由检测器检测由衬底产生的二次电子。 将参考管芯放置在平台上以获得包括参考管芯的特征坐标的模式匹配模板图像。 使用模板图像，使用包含基准管芯的行或列中的任意管芯进行图案匹配，以获得任意管芯的特征坐标。 基于任意模具的特征坐标和参考模具的特征坐标，在包括基准模具的行或列的方向与基板的移动方向之间计算出未对准的角度。 旋转台阶以校正未对准的角度，以使包括基准模具的行或列的方向与衬底的运动方向之一相一致。

公开(公告)号：US08585460B2

公开(公告)日：2013-11-19

申请号：US13712014

申请日：2012-12-12

Applicant: Ebara Corporation

Inventor： Yoichi Kobayashi ,  Shinrou Ohta ,  Toshifumi Kimba ,  Masaki Kinoshita

IPC: B24B49/00 ,  B24B51/00

CPC classification number: B24B49/12 ,  B24B37/013

Abstract: A method of polishing end point detection includes polishing a surface of a substrate; applying light to the surface of the substrate and receiving reflected light from the substrate during the polishing of the substrate; measuring reflection intensities of the reflected light at respective wavelengths; creating a spectral profile indicating a relationship between reflection intensity and wavelength from the reflection intensities measured; extracting at least one extremal point indicating extremum of the reflection intensities from the spectral profile; during polishing of the substrate, repeating the creating of the spectral profile and the extracting of the at least one extremal point to obtain plural spectral profiles and plural extremal points; and detecting the polishing end point based on an amount of relative change in the extremal point between the plural spectral profiles.

Abstract translation: 抛光终点检测的方法包括抛光基底的表面; 在基板的研磨过程中将光施加到基板的表面并接收来自基板的反射光; 测量各波长的反射光的反射强度; 从测量的反射强度产生指示反射强度和波长之间的关系的光谱分布; 从光谱轮廓提取表示反射强度的极值的至少一个极值点; 在衬底的抛光期间，重复产生光谱轮廓和提取至少一个极值点以获得多个光谱曲线和多个极值点; 并且基于多个光谱轮廓之间的极值点的相对变化量来检测抛光终点。

公开(公告)号：US11413720B2

公开(公告)日：2022-08-16

申请号：US16162063

申请日：2018-10-16

Applicant: EBARA CORPORATION

Inventor： Nobuyuki Takahashi ,  Toshifumi Kimba ,  Masaki Kinoshita

IPC: B24B37/10 ,  B24B37/013 ,  G01J3/10 ,  G01J3/42 ,  B24B49/12 ,  G01N21/95 ,  B24B37/20 ,  G01J3/02

Abstract: There is disclosed a polishing apparatus which allows for easy replacement of a light source with another type of light source. The light-source assembly includes: a base fixed to a polishing table and coupled to a light-emitting transmission line; and a light-source module having a lamp for emitting light. The light-source module is removably attached to the base. The base is a common base which is adapted to any of a plurality of light-source modules of different types including the light-source module. The base includes a positioning structure which achieves positioning of the light-source module relative to the base.

公开(公告)号：US20210354262A1

公开(公告)日：2021-11-18

申请号：US17319559

申请日：2021-05-13

Applicant: EBARA CORPORATION

Inventor： Hirotaka Satori ,  Yu Ishii ,  Toshifumi Kimba ,  Masaki Kinoshita

IPC: B24B37/005 ,  B24B37/34 ,  B24B37/04

Abstract: Provided is a technique capable of suppressing a shortage of a light amount of a reflected light from wiring patterns even when a film thickness of a film is thick. A film thickness measurement apparatus 30 is applicable to a polishing apparatus 10 for polishing a film 202 of a substrate 200. The film 202 includes a plurality of wiring patterns. The film thickness measurement apparatus 30 includes a light emitter 43 configured to project an emitted light L1 during polishing of the film by the polishing apparatus, an optical condenser 44 configured to condense the emitted light projected from the light emitter to provide a predetermined spot size D and project the light onto the film, and a light receiver 45 configured to receive a reflected light L2 reflected from the film. The predetermined spot size is smaller than a minimum width of respective wiring patterns constituting the plurality of wiring patterns.

公开(公告)号：US11045921B2

公开(公告)日：2021-06-29

申请号：US15979180

申请日：2018-05-14

Applicant: EBARA CORPORATION

Inventor： Toshifumi Kimba ,  Masaki Kinoshita

IPC: B24B37/005 ,  B24B49/12 ,  B24B37/04 ,  B24B37/20 ,  B24B37/013

Abstract: A polishing apparatus capable of accurately determining a service life of a light source, and further capable of accurately measuring a film thickness of a substrate, such as a wafer, without calibrating an optical film-thickness measuring device, is disclosed. The polishing apparatus includes a spectrometer configured to decompose reflected light from a substrate in accordance with wavelength and measure an intensity of the reflected light at each of wavelengths a film thickness of the substrate is determined based on a spectral waveform indicating a relationship between the intensity of the reflected light and wavelength. An optical-path selecting mechanism is configured to selectively couple either a light-receiving fiber or an internal optical fiber to the spectrometer.

公开(公告)号：US09969048B2

公开(公告)日：2018-05-15

申请号：US14808252

申请日：2015-07-24

Applicant: EBARA CORPORATION

Inventor： Itsuki Kobata ,  Yoichi Kobayashi ,  Katsutoshi Ono ,  Masaki Kinoshita ,  Toshifumi Kimba

IPC: B24B49/12 ,  B24B37/013 ,  B24B37/10 ,  B24B37/26 ,  H01L21/67 ,  H01L21/687 ,  B24B37/04 ,  B24B37/005 ,  H01L21/3105 ,  H01L21/66

CPC classification number: B24B37/26 ,  B24B37/005 ,  B24B37/013 ,  B24B37/04 ,  B24B37/042 ,  B24B37/10 ,  B24B49/12 ,  H01L21/31053 ,  H01L21/67075 ,  H01L21/67092 ,  H01L21/67253 ,  H01L21/68721 ,  H01L22/26

Abstract: A polishing apparatus for polishing a substrate is provided. The polishing apparatus includes: a polishing table holding a polishing pad; a top ring configured to press the substrate against the polishing pad; first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate; spectroscopes each configured to measure at each wavelength an intensity of the reflected light received; and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate.

公开(公告)号：US09604337B2

公开(公告)日：2017-03-28

申请号：US14995143

申请日：2016-01-13

Applicant: EBARA CORPORATION

Inventor： Toshifumi Kimba

IPC: B24B37/00 ,  B24B37/013 ,  B24B49/12 ,  H01L21/306

CPC classification number: B24B37/013 ,  B24B49/12 ,  H01L21/30625

Abstract: A method of polishing a substrate is disclosed. The method includes irradiating the substrate with light; measuring intensity of the reflected light; producing spectral waveform representing relationship between relative reflectance and wavelength of the light; performing a Fourier transform process on the spectral waveform to determine a thickness of the film and a corresponding strength of frequency component; determining whether the determined thickness of the film is reliable or not by comparing the strength of frequency component with a threshold value; calculating a defective data rate representing a proportion of the number of unreliable measured values to the total number of measured values; and changing the threshold value based on the defective data rate.

公开(公告)号：USD731448S1

公开(公告)日：2015-06-09

申请号：US29489180

申请日：2014-04-28

Applicant: EBARA CORPORATION

Designer： Masaki Kinoshita ,  Toshifumi Kimba