Integrated circuit die having a split solder pad

    公开(公告)号:US10192798B2

    公开(公告)日:2019-01-29

    申请号:US15678186

    申请日:2017-08-16

    Abstract: An electronic system is provided, including an integrated circuit die having at least 2 bond pads, and a redistribution layer having at least one solder pad including 2 portions separated from each other and configured to provide an electrical connection between each of the 2 portions by a solder ball disposed on the solder pad, and to electrically isolate the 2 portions in an absence of the solder ball on the solder pad, and at least 2 redistribution wires, each connecting a different one of the portions to a different one of the bond pads, a second bond pad being connected via a second redistribution wire to a second portion being dedicated to die testing; and a grounded printed circuit board track, wherein the solder ball is disposed between the solder pad and the track, and neither of the redistribution wires traverses a separation space between the 2 portions.

    Integrated circuit die having a split solder pad

    公开(公告)号:US10096561B2

    公开(公告)日:2018-10-09

    申请号:US15678201

    申请日:2017-08-16

    Abstract: An integrated circuit die having at least two bond pads, a redistribution layer, the redistribution layer including at least one solder pad including comprising two portions arranged to enable an electrical connection between each other by a same solder ball placed on the solder pad, but electrically isolated of each other in the absence of a solder ball on the solder pad at least two redistribution wires, each one connecting one of the two portions to one of the two bond pads, a first bond pad connected via a first redistribution wire to a first portion of the solder pad being dedicated to digital ground and a second bond pad connected via a second redistribution wire to a second portion of the solder pad being dedicated to analog ground.

    SEMICONDUCTOR WAFER
    4.
    发明公开
    SEMICONDUCTOR WAFER 审中-公开

    公开(公告)号:US20240088066A1

    公开(公告)日:2024-03-14

    申请号:US18463771

    申请日:2023-09-08

    CPC classification number: H01L23/585 H01L21/78 H01L23/3192 H01L24/13

    Abstract: A semiconductor wafer (1a, 1b) including a plurality of chips (2) and a separation zone (3) spacing the semiconductor chips (2) from each other in this wafer (1a, 1b), such a separation zone (3) extending from a front face (4a) to an opposite backside face (4b) of this wafer (1a, 1b), this separation zone (3) includes a scribe line (6) configured to be diced using plasma etching and an inlet area (13) of this scribe line (6), the inlet (13) being delimitated by free ends of plasma etch-resistant material layers (9) extending each from a peripheral wall (20) of a functional part (18) of a chip (2) into the scribe line (6) by overlapping a top of a seal ring (7) of this chip (2).

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