公开(公告)号：US20250075314A1

公开(公告)日：2025-03-06

申请号：US18819824

申请日：2024-08-29

Applicant: ENTEGRIS, INC.

Inventor： Bryan C. Hendrix ,  Lucas B. Henderson ,  Eric Condo ,  Philip S.H. Chen

IPC: C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: A device is provided. The device comprises a substrate having at least one structure with an aspect ratio of at least 10:1. The device comprises a film located on the at least one structure with a step coverage of at least 90%. The film comprises a metal oxide or metalloid oxide; and a concentration of less than 1×1020 hydrogen atoms per cubic centimeter as measured by SIMS. Methods for forming films on substrates and related systems and methods are also provided herein.

公开(公告)号：US12209105B2

公开(公告)日：2025-01-28

申请号：US17901569

申请日：2022-09-01

Applicant: ENTEGRIS, INC.

Inventor： Philip S. H. Chen ,  Eric Condo ,  Bryan C. Hendrix ,  Thomas H. Baum ,  David Kuiper

IPC: C07F7/10 ,  C01B21/082 ,  C07F7/08 ,  C07F7/18 ,  C23C16/30 ,  C23C16/36 ,  C23C16/455 ,  H01L21/02

Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

公开(公告)号：US20240412981A1

公开(公告)日：2024-12-12

申请号：US18737743

申请日：2024-06-07

Applicant: ENTEGRIS, INC.

Inventor： Phil S.H. Chen ,  Bryan C. Hendrix ,  Eric Condo

IPC: H01L21/3205 ,  C23C16/04 ,  C23C16/06 ,  C23C16/448 ,  H01L23/532

Abstract: Selective ruthenium deposition and related systems and methods are provided. A method comprises vaporizing at least a portion of a ruthenium precursor to produce a vaporized ruthenium precursor; contacting a first surface portion and a second surface portion of a substrate with the vaporized ruthenium precursor and at least one reducing gas; and depositing ruthenium on the first surface portion of the substrate with a selectivity of at least 25 Å relative to the second surface portion of the substrate. A device comprises a substrate having a first surface portion and a second surface portion adjacent to the first surface portion; and a ruthenium layer located on the first surface portion of the substrate, wherein the ruthenium layer has a thickness of at least 25 Å on the first surface portion of the substrate; wherein the second surface portion of the substrate does not comprise ruthenium.

公开(公告)号：US20230041086A1

公开(公告)日：2023-02-09

申请号：US17901569

申请日：2022-09-01

Applicant: ENTEGRIS, INC.

Inventor： Philip S.H. Chen ,  Eric Condo ,  Bryan C. Hendrix ,  Thomas H. Baum ,  David Kuiper

IPC: C07F7/10 ,  C01B21/082 ,  C07F7/18 ,  C07F7/08 ,  C23C16/455 ,  H01L21/02 ,  C23C16/36 ,  C23C16/30

Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

公开(公告)号：US20220238330A1

公开(公告)日：2022-07-28

申请号：US17579487

申请日：2022-01-19

Applicant: ENTEGRIS, INC.

Inventor： Philip S.H. CHEN ,  Eric Condo ,  David Kuiper ,  Thomas H. Baum ,  Susan V. Dimeo

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/36 ,  C23C16/30 ,  C07F7/10

Abstract: The invention provides a PEALD process to deposit etch resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 co-reactant. In one embodiment, this PEALD process relies on a single precursor—a bis(dialkylamino)tetraalkyldisiloxane, together with hydrogen plasma to deposit the etch-resistant thin-films of SiOCN. Since the film can be deposited with a single precursor, the overall process exhibits improved throughput.

公开(公告)号：US11380539B2

公开(公告)日：2022-07-05

申请号：US16789106

申请日：2020-02-12

Applicant: ENTEGRIS, INC.

Inventor： Han Wang ,  Bryan C. Hendrix ,  Eric Condo ,  Thomas H. Baum

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/34 ,  C23C16/04 ,  C23C16/455

Abstract: Certain embodiments of the invention utilize low temperature atomic layer deposition methodology to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses silicon tetraiodide (SiI4) or disilicon hexaiodide (Si2I6) as one precursor and uses a nitrogen-containing material such as ammonia as another precursor. In circumstances where a selective deposition of silicon nitride is desired to be deposited over silicon dioxide, the substrate surface is first treated with ammonia plasma.

公开(公告)号：US20250079157A1

公开(公告)日：2025-03-06

申请号：US18819915

申请日：2024-08-29

Applicant: ENTEGRIS, INC.

Inventor： Rong Zhao ,  Eric Condo ,  Bryan C. Hendrix ,  Lucas B. Henderson ,  Philip S.H. Chen

IPC: H01L21/02

Abstract: Methods improving metal oxide deposition with nitrogen oxide, related devices, and related systems are provided herein. The method comprises flowing an ozone gas from an ozone generator to a deposition chamber. The method comprises flowing a nitrogen oxide gas from a first source to the deposition chamber. The method comprises flowing a first precursor gas from a second source to the deposition chamber. The method comprises exposing a substrate located in the deposition chamber to at least one of the ozone gas, the nitrogen oxide gas, the first precursor gas, or any combination thereof. The method step of exposing is sufficient to form a film having a step coverage of at least 50%. The substrate has at least one structure with an aspect ratio of at least 10:1.

公开(公告)号：US20230187202A1

公开(公告)日：2023-06-15

申请号：US18079318

申请日：2022-12-12

Applicant: ENTEGRIS, INC.

Inventor： Han Wang ,  Bryan Clark Hendrix ,  Eric Condo

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/50 ,  C23C16/455

CPC classification number: H01L21/02208 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/02274 ,  H01L21/02315 ,  C23C16/345 ,  C23C16/50 ,  C23C16/4554

Abstract: The use of selective deposition of silicon nitride can eliminate conventional patterning steps by allowing silicon nitride to be deposited only in selected and desired areas. Using a silicon iodide precursor alternately with a thermal nitrogen source in an ALD or pulsed CVD mode, silicon nitride can be deposited preferentially on a surface such as silicon nitride, silicon dioxide, germanium oxide, SiCO, SiOF, silicon carbide, silicon oxynitride, and low k substrates, while exhibiting very little deposition on exposed surfaces such as titanium nitride, tantalum nitride, aluminum nitride, hafnium oxide, zirconium oxide, aluminum oxide, titanium oxide, tantalum oxide, niobium oxide, lanthanum oxide, yttrium oxide, magnesium oxide, calcium oxide, and strontium oxide.

公开(公告)号：US11466038B2

公开(公告)日：2022-10-11

申请号：US16899060

申请日：2020-06-11

Applicant: ENTEGRIS, INC.

Inventor： Philip S. H. Chen ,  Eric Condo ,  Bryan C. Hendrix ,  Thomas H. Baum ,  David Kuiper

IPC: C07F7/18 ,  C07F7/10 ,  C01B21/082 ,  C07F7/08 ,  C23C16/455 ,  H01L21/02 ,  C23C16/36 ,  C23C16/30

Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.