-
公开(公告)号：US20170044431A1
公开(公告)日：2017-02-16
申请号：US14826661
申请日：2015-08-14
Applicant: EPISTAR CORPORATION
Inventor： Chun Che Lin , Ling-Ling Wei , Ru-Shi Liu , Ming-Chi Hsu , Ai-Sen Liu
CPC classification number: C09K11/666 , C09K11/617 , C09K11/665 , H01L33/50 , H05B33/12
Abstract: A phosphor, having a general formula of K2[Si1-xGex]yF6:Mn1-y4+. The phosphor is excited to emit a light having a first main emission peak with a first maximum emission intensity and a first dominant wavelength, wherein a relative emission intensity S of the light of the phosphor is constantly greater than 85% across an temperature of the phosphor between 300 K and 470 K during operation, wherein S=(IT/IRT)*100%, IRT and IT are the first maximum emission intensity when the temperature of the phosphor is at 300 K and T during operation respectively, and 300 K
Abstract translation: 具有通式K2 [Si1-xGex] yF6：Mn1-y4 +的荧光体。 荧光体被激发以发射具有第一最大发射强度和第一主波长的第一主发射峰的光，其中荧光体的光的相对发射强度S在荧光体的温度下恒定地大于85％ 在操作期间在300K和470K之间，其中S =（IT / IRT）* 100％，当荧光体的温度分别在300K和T下时，IRT和IT是第一最大发射强度， T≦470K。
-
公开(公告)号：US20170002463A1
公开(公告)日：2017-01-05
申请号：US15198649
申请日：2016-06-30
Applicant: EPISTAR CORPORATION
Inventor： Nai-Wen Fan , Shau-Yi Chen , Ai-Sen Liu , Zhi Zhong Ke , Chien-Bao Lin , Wen-Hao Zhuo , Feng-Zhi Chen , Chien-Cheng Kuo , Shih-Hao Chan , Chih-Hao Chen , Wei-Chih Peng , Chia-Liang Hsu
IPC: C23C16/455
CPC classification number: C23C16/45525 , C23C16/45536 , C23C16/45565 , C23C16/45574 , C23C16/50 , H01J37/3244
Abstract: A thin-film deposition apparatus comprises a chamber; a carrier in the chamber; a showerhead on the carrier, wherein the showerhead comprises multiple first gas-dispensing holes, multiple second gas-dispensing holes and multiple plasma-generating portions; and a first gas inlet system for providing a first process gas, wherein the first process gas outputted from the multiple first gas-dispensing holes.
Abstract translation: 薄膜沉积设备包括一个室; 在房间里的一个载体; 在所述载体上的喷头，其中所述喷头包括多个第一气体分配孔，多个第二气体分配孔和多个等离子体产生部分; 以及用于提供第一处理气体的第一气体入口系统，其中从多个第一气体分配孔输出的第一处理气体。
-
Patent Agency Ranking
3.发明授权Method of fabricating an optoelectronic device with a hollow component in epitaxial layer 有权在外延层中制造具有中空组分的光电器件的方法公开(公告)号：US09520281B2
公开(公告)日：2016-12-13
申请号：US14204728
申请日：2014-03-11
Applicant: Epistar Corporation
Inventor： Ai-Sen Liu
CPC classification number: H01L21/02203 , H01L21/02458 , H01L21/02461 , H01L21/02513 , H01L21/0254 , H01L21/02543 , H01L21/02656 , H01L33/0079 , H01L33/16 , H01L33/42 , H01L33/60
Abstract: A method of fabricating an epitaxial device, comprising: providing a substrate having a first surface and a normal direction; epitaxially forming a first transition layer in a first temperature on the first surface of the substrate and in-situ incorporating a porogen into the first transition layer; and adjusting the first temperature to a second temperature to burn out the porogen from the first transition layer to form a hollow component inside the first transition layer.
Abstract translation: 一种制造外延装置的方法，包括：提供具有第一表面和法线方向的基板; 在衬底的第一表面上以第一温度外延地形成第一过渡层，并原位将掺杂有致孔剂并入第一过渡层中; 以及将所述第一温度调节到第二温度以从所述第一过渡层烧尽所述致孔剂，以在所述第一过渡层内形成中空组分。
-
4.发明授权公开(公告)号：US09583680B2
公开(公告)日：2017-02-28
申请号：US14939458
申请日：2015-11-12
Applicant: EPISTAR CORPORATION
Inventor： Yung-Fu Chang , Meng-Chyi Wu , Chong-Long Ho , Ai-Sen Liu
IPC: H01L33/44 , H01L33/42 , H01L31/0224 , H01L31/0296 , H01L31/18 , H01L33/06 , H01L33/32
CPC classification number: H01L33/44 , H01L31/022483 , H01L31/02963 , H01L31/1844 , H01L31/1884 , H01L33/06 , H01L33/32 , H01L33/42 , H01L2933/0025 , Y02E10/544 , Y02P70/521
Abstract: An optical electrical device comprises a base and a transparent conductive structure on the base is disclosed. The base further comprises a light-emitting device and the transparent conductive structure comprises a transparent conductive oxide layer and a passivation layer on the transparent conductive oxide layer. The material of the transparent conductive oxide layer comprises transparent conductive metal oxide, such as ZnO. Furthermore, the transparent conductive metal oxide also comprises impurities, such as a carrier e.g. gallium.
Abstract translation: 公开了一种光电装置，其包括底座和底座上的透明导电结构。 基底还包括发光器件，并且透明导电结构在透明导电氧化物层上包括透明导电氧化物层和钝化层。 透明导电氧化物层的材料包括诸如ZnO的透明导电金属氧化物。 此外，透明导电金属氧化物还包括杂质，例如载体例如 镓。
-
公开(公告)号：US09926488B2
公开(公告)日：2018-03-27
申请号：US14826661
申请日：2015-08-14
Applicant: EPISTAR CORPORATION
Inventor： Chun Che Lin , Ling-Ling Wei , Ru-Shi Liu , Ming-Chi Hsu , Ai-Sen Liu
CPC classification number: C09K11/666 , C09K11/617 , C09K11/665 , H01L33/50 , H05B33/12
Abstract: A phosphor, having a general formula of K2[Si1-xGex]yF6:Mn1-y4+. The phosphor is excited to emit a light having a first main emission peak with a first maximum emission intensity and a first dominant wavelength, wherein a relative emission intensity S of the light of the phosphor is constantly greater than 85% across an temperature of the phosphor between 300 K and 470 K during operation, wherein S=(IT/IRT)*100%, IRT and IT are the first maximum emission intensity when the temperature of the phosphor is at 300 K and T during operation respectively, and 300 K
-
公开(公告)号：US20170088773A1
公开(公告)日：2017-03-30
申请号：US15273053
申请日：2016-09-22
Applicant: EPISTAR CORPORATION
Inventor： Shin-Ying Lin , Chun-Che Lin , Ru-Shi Liu , Ming-Chi Hsu , Ai-Sen Liu
CPC classification number: C09K11/7734 , H01L33/502 , H01L33/507 , H01L33/56
Abstract: An embodiment of the present disclosure discloses a phosphor material and a manufacturing method thereof. The general composition of the phosphor material is A2-xMO4:Eux, wherein A includes a single element or at least two elements selected from the group consisting of Ca, Sr, and Ba, M is Si, Ge or combination thereof, wherein x is greater than 0.01 and 2-x>0. The phosphor material can be excited by a first excitation wavelength and emit a first emission spectrum and, excited by a second excitation wavelength and emit a second emission spectrum. The first excitation wavelength is different from the second excitation wavelength, and the first emission spectrum is different from the second emission spectrum.
-
7.发明申请公开(公告)号：US20140203322A1
公开(公告)日：2014-07-24
申请号：US13970732
申请日：2013-08-20
Applicant: EPISTAR CORPORATION
Inventor： Yung-Fu Chang , Meng-Chyi Wu , Chong-Long Ho , Ai-Sen Liu
IPC: H01L33/62
CPC classification number: H01L33/44 , H01L31/022483 , H01L31/02963 , H01L31/1844 , H01L31/1884 , H01L33/06 , H01L33/32 , H01L33/42 , H01L2933/0025 , Y02E10/544 , Y02P70/521
Abstract: An optical electrical device comprises a base and a transparent conductive structure on the base is disclosed. The base further comprises a light-emitting device and the transparent conductive structure comprises a transparent conductive oxide layer and a passivation layer on the transparent conductive oxide layer. The material of the transparent conductive oxide layer comprises transparent conductive metal oxide, such as ZnO. Furthermore, the transparent conductive metal oxide also comprises impurities, such as a carrier e.g. gallium.
Abstract translation: 公开了一种光电装置，其包括底座和底座上的透明导电结构。 基底还包括发光器件，并且透明导电结构在透明导电氧化物层上包括透明导电氧化物层和钝化层。 透明导电氧化物层的材料包括诸如ZnO的透明导电金属氧化物。 此外，透明导电金属氧化物还包括杂质，例如载体例如 镓。
-
-
-
-
-
-
Search Results
7
records
(took 0.019 seconds)
