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公开(公告)号：US20240266476A1
公开(公告)日：2024-08-08
申请号：US18638220
申请日：2024-04-17
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Tsung-Hsun CHIANG , Chien-Chih LIAO , Wen-Hung CHUANG , Min-Yen TSAI , Bo-Jiun HU
Abstract: A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.
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公开(公告)号：US20230395765A1
公开(公告)日：2023-12-07
申请号：US18230119
申请日：2023-08-03
Applicant: EPISTAR CORPORATION
Inventor： Hsin-Ying WANG , Chih-Hao CHEN , Chien-Chih LIAO , Chao-Hsing CHEN , Wu-Tsung LO , Tsun-Kai KO , Chen OU
Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.
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公开(公告)号：US20210249565A1
公开(公告)日：2021-08-12
申请号：US17241958
申请日：2021-04-27
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Tsung-Hsun CHIANG , Chien-Chih LIAO , Wen-Hung CHUANG , Min-Yen TSAI , Bo-Jiun HU
Abstract: A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.
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公开(公告)号：US20210234071A1
公开(公告)日：2021-07-29
申请号：US17228602
申请日：2021-04-12
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Chien-Chih LIAO , Tzu-Yao TSENG , Tsun-Kai KO , Chien-Fu SHEN
IPC: H01L33/38
Abstract: An optoelectronic device includes a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a first insulating layer on the second semiconductor layer and including a plurality of first openings exposing the first semiconductor layer, wherein the first openings include a first group and a second group; a third electrode on the first insulating layer and including a first extended portion and a second extended portion, wherein the first extended portion and the second extended portion are respectively electrically connected to the first semiconductor layer through the first group of the first openings and the second group of the first openings, and wherein the number of the first group of the first openings is different from the number of the second group of the first openings; and a plurality of fourth electrodes on the second insulating layer and electrically connected to the second semiconductor layer, wherein in a top view of the optoelectronic device, the first extended portion is located between the fourth electrodes.
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公开(公告)号：US20160005926A1
公开(公告)日：2016-01-07
申请号：US14791949
申请日：2015-07-06
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Chien-Chih LIAO , Tzu-Yao TSENG , Tsun-Kai KO , Chien-Fu SHEN
CPC classification number: H01L33/38 , H01L33/405
Abstract: An optoelectronic device, comprising: a first semiconductor layer comprising four boundaries, a corner formed by two of the neighboring boundaries, a first surface, and a second surface opposite to the first surface; a second semiconductor layer formed on the first surface of the first semiconductor layer; a second conductive type electrode formed on the second semiconductor layer; and two first conductive type electrodes formed on the first surface, wherein the first conductive type electrodes are separated and formed a pattern.
Abstract translation: 一种光电子器件，包括：包括四个边界的第一半导体层，由两个相邻边界形成的拐角，第一表面和与第一表面相对的第二表面; 形成在第一半导体层的第一表面上的第二半导体层; 形成在所述第二半导体层上的第二导电型电极; 以及形成在第一表面上的两个第一导电型电极，其中第一导电类型电极被分离并形成图案。
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Patent Agency Ranking
公开(公告)号：US20240372053A1
公开(公告)日：2024-11-07
申请号：US18654733
申请日：2024-05-03
Applicant: EPISTAR CORPORATION
Inventor： Hsin-Ying WANG , Jhih-Yong YANG , Chien-Chih LIAO , Chao-Hsing CHEN , Jheng-Long HUANG , Ching-Hsing SHEN , Hui-Fang KAO
Abstract: A light-emitting device includes: a semiconductor stack, including a first semiconductor layer and a plurality of mesas spaced apart from each other on the first semiconductor layer, wherein the plurality of mesas each includes a second semiconductor layer, the first semiconductor layer and the second semiconductor layer have different conductivity types; a contact metal formed on the semiconductor stack, including a plurality of first contact parts located between the mesas and electrically connected to the first semiconductor layer, and a plurality of second contact parts located on the mesas and electrically connected to the second semiconductor layer; a first insulating structure formed on the contact metal, including a plurality of first openings corresponding to the first contact parts and a plurality of second openings corresponding to the second contact parts; a current spreading electrode formed on the first insulating structure, including a first current spreader and a plurality of second current spreaders, wherein the first current spreader is located between the mesas and filled in the first openings to connect the first contact parts and the second current spreaders are formed on the mesas and filled in the second openings to connect the second contact parts; a second insulating structure formed on the current spreading electrode, including a third opening on the first current spreader and a plurality of fourth openings formed on the second current spreaders; and an electrode pad structure formed on the second insulating structure, including at least one first electrode pad filled in the third opening to connect to the first current spreader, and a plurality of second electrode pads filled in the fourth openings to connect the second current spreaders.
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公开(公告)号：US20210343913A1
公开(公告)日：2021-11-04
申请号：US17306141
申请日：2021-05-03
Applicant: EPISTAR CORPORATION
Inventor： Hsin-Ying WANG , Chih-Hao CHEN , Chien-Chih LIAO , Chao-Hsing CHEN , Wu-Tsung LO , Tsun-Kai KO , Chen OU
Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.
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公开(公告)号：US20200020739A1
公开(公告)日：2020-01-16
申请号：US16510388
申请日：2019-07-12
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , I-Lun MA , Bo-Jiun HU , Yu-Ling LIN , Chien-Chih LIAO
Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first light-emitting unit and connected to the first semiconductor layer formed in the first opening, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.
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公开(公告)号：US20180076358A1
公开(公告)日：2018-03-15
申请号：US15820002
申请日：2017-11-21
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Chien-Chih LIAO , Tzu-Yao TSENG , Tsun-Kai KO , Chien-Fu SHEN
IPC: H01L33/38
CPC classification number: H01L33/38 , H01L33/405
Abstract: An optoelectronic device, comprising a first semiconductor layer comprising four boundaries comprising two longer sides and two shorter sides; a second semiconductor layer formed on the first semiconductor layer; and a plurality of first conductive type electrodes formed on the first semiconductor layer, wherein one first part of the plurality of first conductive type electrodes is formed on a corner constituted by one of the two longer sides and one of the two shorter sides, and wherein one fourth part of the plurality of first conductive type electrodes is formed along the one of the two longer sides, the one fourth part of the plurality of first conductive type electrodes comprises a head portion and a tail portion, the head portion comprises a width larger than that of the tail portion.
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公开(公告)号：US20240194724A1
公开(公告)日：2024-06-13
申请号：US18442843
申请日：2024-02-15
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , I-Lun MA , Bo-Jiun HU , Yu-Ling LIN , Chien-Chih LIAO
IPC: H01L27/15 , H01L33/00 , H01L33/12 , H01L33/24 , H01L33/30 , H01L33/38 , H01L33/42 , H01L33/46 , H01L33/62
CPC classification number: H01L27/156 , H01L33/24 , H01L33/385 , H01L33/0075 , H01L33/0093 , H01L33/12 , H01L33/30 , H01L33/42 , H01L33/46 , H01L33/62 , H01L2933/0016
Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first light-emitting unit and connected to the first semiconductor layer formed in the first opening, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.
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