公开(公告)号：US20160013383A1

公开(公告)日：2016-01-14

申请号：US14796654

申请日：2015-07-10

Applicant: EPISTAR CORPORATION

Inventor： Chien-Ming WU ,  Rong-Ren LEE ,  Tzu-Chieh HSU ,  Ming-Nam CHANG

IPC: H01L33/60 ,  H01L33/30

CPC classification number: H01L33/10 ,  H01L33/30 ,  H01L33/38 ,  H01L33/46

Abstract: A light-emitting device comprising a substrate; a semiconductor stack capable of emitting a light; a first reflecting structure between the substrate and the semiconductor stack to reflect the light; and a second reflecting structure between the substrate and the semiconductor stack, wherein the first reflecting structure has a maximum reflectivity when the light is incident to the first reflecting structure at a first incident angle, the second reflecting structure has a maximum reflectivity when the light is incident to the second reflecting structure at a second incident angle.

Abstract translation: 1.一种发光器件，包括：衬底; 能够发光的半导体堆叠; 在基板和半导体叠层之间的第一反射结构以反射光; 以及在所述基板和所述半导体堆叠之间的第二反射结构，其中当所述光以第一入射角入射到所述第一反射结构时，所述第一反射结构具有最大反射率，所述第二反射结构在所述光为 以第二入射角入射到第二反射结构。

公开(公告)号：US20140217359A1

公开(公告)日：2014-08-07

申请号：US14166642

申请日：2014-01-28

Applicant: EPISTAR CORPORATION

Inventor： Chien-Ming WU ,  Wu-Tsung LO ,  Shih-Chang LEE

IPC: H01L33/30

CPC classification number: H01L33/10 ,  H01L33/04 ,  H01L33/14

Abstract: The present application discloses a light-emitting apparatus comprising a first light-emitting semiconductor stack, a first intermediate layer formed on the first light-emitting semiconductor stack and a second light-emitting semiconductor stack formed on the first intermediate layer. The first intermediate layer comprises a first conductive semiconductor layer, a second conductive semiconductor layer and an intermediate region. The intermediate region has a discontinuous structure located between the first conductive semiconductor layer and the second conductive semiconductor layer.

Abstract translation: 本申请公开了一种包括第一发光半导体堆叠，形成在第一发光半导体堆叠上的第一中间层和形成在第一中间层上的第二发光半导体堆叠的发光装置。 第一中间层包括第一导电半导体层，第二导电半导体层和中间区域。 中间区域具有位于第一导电半导体层和第二导电半导体层之间的不连续结构。

公开(公告)号：US20150034155A1

公开(公告)日：2015-02-05

申请号：US13957958

申请日：2013-08-02

Applicant: EPISTAR CORPORATION

Inventor： Yi-Hung LIN ,  Chien-Ming WU

IPC: H01L31/0216

CPC classification number: H01L31/02168 ,  H01L31/02167 ,  H01L31/0687 ,  Y02E10/544 ,  Y02P70/521

Abstract: An optoelectronic device includes: a semiconductor stack including an upper surface and a side surface; a first electrode formed on the upper surface of the semiconductor stack; a first anti-reflection structure formed on the first electrode and the upper surface; and a second anti-reflection structure different from the first anti-reflection structure formed on the side surface.

Abstract translation: 光电子器件包括：包括上表面和侧表面的半导体堆叠; 形成在所述半导体叠层的上表面上的第一电极; 形成在第一电极和上表面上的第一抗反射结构; 以及与形成在侧面上的第一防反射结构不同的第二防反射结构。