公开(公告)号：US11929730B2

公开(公告)日：2024-03-12

申请号：US17172568

申请日：2021-02-10

Applicant: EPISTAR CORPORATION

Inventor： Ta-Cheng Hsu ,  Wei-Shou Chen ,  Chun-Yi Lin ,  Chung-Jen Chung ,  Wei-Tsuen Ye ,  Wei-Ching Guo

IPC: H03H9/13 ,  H03H3/02 ,  H03H9/17 ,  H10N30/076 ,  H10N30/87

CPC classification number: H03H9/131 ,  H03H3/02 ,  H03H9/173 ,  H10N30/076 ,  H10N30/877 ,  H03H2003/021

Abstract: An acoustic wave element includes: a substrate; a bonding structure on the substrate; a support layer on the bonding structure; a first electrode including a lower surface on the support layer; a cavity positioned between the support layer and the first electrode and exposing a lower surface of the first electrode; a piezoelectric layer on the first electrode; and a second electrode on the piezoelectric layer, wherein at least one of the first electrode and the second electrode includes a first layer and a second layer that the first layer has a first acoustic impedance and a first electrical impedance, the second layer has a second acoustic impedance and a second electrical impedance, wherein the first acoustic impedance is higher than the second acoustic impedance, and the second electrical impedance is lower than the first electrical impedance.

公开(公告)号：US12068735B2

公开(公告)日：2024-08-20

申请号：US17193492

申请日：2021-03-05

Applicant: EPISTAR CORPORATION

Inventor： Ta-Cheng Hsu ,  Wei-Shou Chen ,  Chung-Jen Chung ,  Chia-Min Chang

IPC: H03H9/02 ,  H03H3/02 ,  H03H9/05

CPC classification number: H03H9/02015 ,  H03H3/02 ,  H03H9/0514

Abstract: An acoustic wave device, includes piezoelectric layer having an upper piezoelectric surface and a lower piezoelectric surface; an upper electrode formed on the upper piezoelectric surface; a lower electrode; a support layer including a non-monocrystalline insulating material; and a lower cover, wherein the lower electrode and the support layer formed between the lower cover and the lower piezoelectric surface.

公开(公告)号：US12191841B2

公开(公告)日：2025-01-07

申请号：US17308146

申请日：2021-05-05

Applicant: EPISTAR CORPORATION

Inventor： Wei-Tsuen Ye ,  Ta-Cheng Hsu ,  Wei-Shou Chen ,  Chung-Jen Chung

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/02

Abstract: A method for forming an acoustic wave device, including steps of: forming an acoustic wave sensing part and an acoustic wave reflecting part, wherein the step of forming the acoustic wave sensing part includes: providing a first substrate, forming a sensing layer on the first substrate, forming a bottom electrode on a side of the sensing layer, and forming a filling layer on the sensing layer and the bottom electrode; and wherein the step of forming the acoustic wave reflecting part includes: providing a second substrate, forming a reflecting element on the second substrate, and forming a cover layer on the reflecting element; joining the acoustic wave sensing part and the acoustic wave reflecting part; removing the first substrate; and forming a top electrode on another side of the sensing layer, wherein the bottom electrode, the top electrode and the reflecting element are arranged correspondingly to each other.