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Patent Agency Ranking
公开(公告)号：US20150228856A1
公开(公告)日：2015-08-13
申请号：US14690910
申请日：2015-04-20
Applicant: Epistar Corporation
Inventor： Liang-Sheng CHI , Pei-Chia CHEN , Chih-Hao CHEN
CPC classification number: H01L33/22 , H01L27/153 , H01L33/005 , H01L33/0095 , H01L33/46 , H01L2933/0025 , H01L2933/0033
Abstract: A method of manufacturing a light-emitting diode comprises the steps of providing a substrate comprising an upper surface and a bottom surface opposite to the upper surface; providing a semiconductor stack layer on the upper surface, wherein the semiconductor stack layer comprises a first type semiconductor layer having a first surface, a light-emitting layer on the first type semiconductor layer for emitting light, and a second type semiconductor layer on the light-emitting layer; treating the first surface to form a second surface, wherein the second surface is flatter than the first surface; and providing a laser beam through the second surface to cut the substrate.
Abstract translation: 制造发光二极管的方法包括以下步骤：提供包括与上表面相对的上表面和底表面的基底; 在所述上表面上提供半导体堆叠层，其中所述半导体堆叠层包括具有第一表面的第一类型半导体层，用于发光的所述第一类型半导体层上的发光层和所述光上的第二类型半导体层 发光层 处理所述第一表面以形成第二表面，其中所述第二表面比所述第一表面平坦; 以及提供通过所述第二表面的激光束以切割所述基板。
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公开(公告)号：US20200243598A1
公开(公告)日：2020-07-30
申请号：US16750227
申请日：2020-01-23
Applicant: EPISTAR CORPORATION
Inventor： Po-Shun CHIU , Tsung-Hsun CHIANG , Liang-Sheng CHI , Jing JIANG , Jie CHEN , Tzung-Shiun YEH , Hsin-Ying WANG , Hui-Chun YEH , Chien-Fu SHEN
Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.
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公开(公告)号：US20140299901A1
公开(公告)日：2014-10-09
申请号：US13858504
申请日：2013-04-08
Applicant: EPISTAR CORPORATION
Inventor： Liang-Sheng CHI , Pei-Chia CHEN , Chih-Hao CHEN
CPC classification number: H01L33/22 , H01L27/153 , H01L33/005 , H01L33/0095 , H01L33/46 , H01L2933/0025 , H01L2933/0033
Abstract: A light-emitting diode, comprising: a substrate, the substrate comprising an upper surface, a bottom surface opposite to the upper surface, and a side surface; a first type semiconductor layer on the upper surface, wherein the first type semiconductor layer comprises a first portion and a second portion, and the second portion comprises an edge surrounding the first portion; a light-emitting layer on the first portion; and a second type semiconductor layer on the light-emitting layer, wherein the second portion comprising a first surface and a second surface, and a first distance is between the first surface and the upper surface, and a second distance is between the second surface and the upper surface and is smaller than the first distance; wherein the first surface is rougher than the second surface, and the second surface is located at the edge.
Abstract translation: 一种发光二极管，包括：基板，所述基板包括上表面，与所述上表面相对的底表面和侧表面; 在上表面上的第一类型半导体层，其中所述第一类型半导体层包括第一部分和第二部分，并且所述第二部分包括围绕所述第一部分的边缘; 在第一部分上的发光层; 和在发光层上的第二类型半导体层，其中第二部分包括第一表面和第二表面，第一距离在第一表面和上表面之间，第二距离在第二表面和第二表面之间 上表面小于第一距离; 其中所述第一表面比所述第二表面更粗糙，并且所述第二表面位于所述边缘处。
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公开(公告)号：US20230005984A1
公开(公告)日：2023-01-05
申请号：US17901655
申请日：2022-09-01
Applicant: EPISTAR CORPORATION
Inventor： Po-Shun CHIU , Tsung-Hsun CHIANG , Liang-Sheng CHI , Jing JIANG , Jie CHEN , Tzung- Shiun YEH , Hsin-Ying WANG , Hui-Chun YEH , Chien-Fu SHEN
Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.
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公开(公告)号：US20190237628A1
公开(公告)日：2019-08-01
申请号：US16380115
申请日：2019-04-10
Applicant: EPISTAR CORPORATION
Inventor： Chen OU , Liang-Sheng CHI , Chun-WEI CHANG , Chih-Wei WU
Abstract: A light-emitting device includes: a light-emitting stack formed on a first conductivity type contact layer and including an active layer and a second conductivity type semiconductor layer on the active layer; a first trench dividing the light-emitting stack into a first portion and a second portion, wherein the first trench includes a bottom exposing a top surface of the first conductivity type contact layer; a non-conductive material layer formed in the first trench and being a film conformal to a profile of the first trench; a connecting layer formed in the first trench and electrically connecting the first and the second portions of the light-emitting stack, wherein the connecting layer is a film conformal to a profile of the non-conductive material layer; and a first electrode formed on the first conductivity type contact layer and electrically connected to the first conductivity type semiconductor layer.
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