公开(公告)号：US20140084188A1

公开(公告)日：2014-03-27

申请号：US14038696

申请日：2013-09-26

Applicant: EPISTAR CORPORATION

Inventor： Ming-Hong HUANG ,  Pei-Hsiang TSENG ,  Pei-Hsiu SHIH ,  Chia-Hung YU ,  Min-Shun HUANG

IPC: G01R31/26

CPC classification number: G01R31/2635 ,  G01J1/0422 ,  G01J1/42 ,  G01J2001/0481 ,  G01J2001/4252

Abstract: An apparatus for measuring the optoelectronic characteristics of a light-emitting diode includes: a container including a light input port and a light output port; a measurement module connected to the light output port of the container; a sample holder under the container for holding a light-emitting diode under test, wherein a surface of the measurement module reflects more than 50% of the luminous flux generated by the light-emitting diode under test; and a light gathering unit between the container and the sample holder, wherein an interior wall of the light gathering unit reflects more than 50% of the luminous flux generated by the light-emitting diode under test.

Abstract translation: 一种用于测量发光二极管的光电特性的装置，包括：包括光输入端口和光输出端口的容器; 连接到容器的光输出端口的测量模块; 用于保持被测试的发光二极管的容器下面的样品保持器，其中测量模块的表面反映了由被测发光二极管产生的光通量的50％以上; 以及在所述容器和所述样品保持器之间的聚光单元，其中所述聚光单元的内壁反射由被测试的发光二极管产生的光通量的50％以上。

公开(公告)号：US20210249561A1

公开(公告)日：2021-08-12

申请号：US17179729

申请日：2021-02-19

Applicant: EPISTAR CORPORATION

Inventor： Chien Cheng HUANG ,  Kuo-Wei YEN ,  Yu-Wei KUO ,  Yao-Wei YANG ,  Pei-Hsiang TSENG

IPC: H01L33/14 ,  H01L33/42 ,  H01L33/44 ,  H01L33/38 ,  H01L33/00 ,  H01L33/24 ,  H01L33/32

Abstract: A light emitting device includes: a plurality of light emitting stacked layers, including a first surface and a second surface, wherein the second surface is electrically opposite to the first surface; a mesa structure; a current blocking layer disposed on the first surface, including a sidewall; and a transparent conductive layer disposed on the first surface; and a first pad electrode, disposed on the transparent conductive layer and on the first surface; wherein a retract distance of the transparent conductive layer with respect to an edge of the mesa structure is less than 3 μm; and wherein a retract distance of the transparent conductive layer with respect to an edge of the sidewall of the current blocking layer is less than 3 μm.