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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20180331256A1

    公开(公告)日：2018-11-15

    申请号：US15971367

    申请日：2018-05-04

    Applicant: EPISTAR CORPORATION

    Inventor： Tzu-Chieh HSU ,  Yi-Wen HUANG ,  Shou-Lung CHEN ,  Hsin-Kang CHEN

    IPC: H01L33/10 ,  H01L33/60 ,  H01L33/38 ,  H01L33/62 ,  H01L33/20

    CPC classification number: H01L33/10 ,  H01L33/20 ,  H01L33/385 ,  H01L33/60 ,  H01L33/62 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/18305 ,  H01S5/18311 ,  H01S5/423 ,  H01S2301/176

    Abstract: The present disclosure provides a semiconductor device including a first reflective structure, a second reflective structure and a cavity region between the first reflective structure and the second reflective structure. The cavity region includes a first surface, a second surface opposite to the first surface and a sidewall between the first surface and the second surface. The first surface is closer to the first reflective structure than the second reflective structure. The semiconductor device further includes a first electrode electrically connected to the first reflective structure. The semiconductor device further includes a second electrode electrically connected to the second reflective structure. The second electrode includes a pad portion and a side portion extending from the pad portion. The first electrode and the pad portion of the second electrode are on the first surface, and the side portion of the second electrode covers the sidewall of the cavity region.

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210336079A1

    公开(公告)日：2021-10-28

    申请号：US17333611

    申请日：2021-05-28

    Applicant: EPISTAR CORPORATION

    Inventor： Tzu-Chieh HSU ,  Yi-Wen HUANG ,  Shou-Lung CHEN ,  Hsin-Kang CHEN

    IPC: H01L33/10 ,  H01S5/042 ,  H01S5/42 ,  H01L33/20 ,  H01L33/60 ,  H01S5/02 ,  H01L33/62 ,  H01L33/38 ,  H01S5/183

    Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.

    METHOD FOR MAKING LIGHT-EMITTING DEVICE
    3.
    发明申请
    METHOD FOR MAKING LIGHT-EMITTING DEVICE 有权
    制造发光装置的方法

    公开(公告)号：US20160149072A1

    公开(公告)日：2016-05-26

    申请号：US14550016

    申请日：2014-11-21

    Applicant: EPISTAR CORPORATION

    Inventor： Chih-Chiang LU ,  Yi-Chieh LIN ,  Wen-Luh LIAO ,  Shou-Lung CHEN ,  Chien-Fu HUANG

    IPC: H01L33/00 ,  H01L33/08 ,  H01L33/10

    CPC classification number: H01L33/08 ,  H01L27/15 ,  H01L33/005 ,  H01L33/0062 ,  H01L33/10 ,  H01L33/50 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00014

    Abstract: A method for making a light-emitting device comprises the steps of: providing a growth substrate; forming a first light-emitting semiconductor stack on the growth substrate by epitaxial growth, and the first light-emitting semiconductor stack comprises a first active layer; forming a Distributed Bragg reflector on the first light-emitting semiconductor stack by epitaxial growth; forming a second light-emitting semiconductor stack on the Distributed Bragg reflector by epitaxial growth, and the second light-emitting semiconductor stack comprises a second active layer; and wherein the first active layer emits a first radiation of a first dominant wavelength, and the second active layer emits a second radiation of a second dominant wavelength longer than the first dominant wavelength.

    Abstract translation: 制造发光器件的方法包括以下步骤：提供生长衬底; 通过外延生长在生长衬底上形成第一发光半导体堆叠，并且第一发光半导体堆叠包括第一有源层; 通过外延生长在第一发光半导体堆叠上形成分布布拉格反射器; 通过外延生长在所述分布式布拉格反射器上形成第二发光半导体堆叠，并且所述第二发光半导体堆叠包括第二有源层; 并且其中所述第一有源层发射第一主波长的第一辐射，并且所述第二有源层发射比所述第一主波长长的第二主波长的第二辐射。

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20230067254A1

    公开(公告)日：2023-03-02

    申请号：US17983947

    申请日：2022-11-09

    Applicant: EPISTAR CORPORATION ,  iReach Corporation

    Inventor： Hsin-Chan CHUNG ,  Shou-Lung CHEN

    IPC: H01S5/042 ,  H01S5/028 ,  H01S5/183 ,  H01S5/023 ,  H01S5/0225 ,  H01S5/0233 ,  H01S5/0235

    Abstract: A semiconductor device includes a substrate, a first type semiconductor structure, semiconductor columnar bodies between the substrate and the first type semiconductor structure, a first electrode and a second electrode. The first type semiconductor structure includes a first surface, a second surface opposite the first surface and away from the substrate, a first extension and a second extension respectively extending outward beyond the semiconductor columnar bodies. The first electrode and the second electrode are on the second surface of the first type semiconductor structure.

    LASER DEVICE
    6.
    发明申请
    LASER DEVICE 审中-公开

    公开(公告)号：US20200350742A1

    公开(公告)日：2020-11-05

    申请号：US16863277

    申请日：2020-04-30

    Applicant: EPISTAR CORPORATION ,  iReach Corporation

    Inventor： Hsin-Chan CHUNG ,  Shou-Lung CHEN

    IPC: H01S5/042 ,  H01S5/028 ,  H01S5/022 ,  H01S5/183

    Abstract: A semiconductor device includes a substrate, an epitaxial stack disposed on the substrate, a first connection layer between the epitaxial stack and the substrate and a first electrode disposed on the first connection layer. The substrate has a first side surface and a second side surface. The epitaxial stack has a semiconductor structure with a first lateral surface adjacent to the first side surface and a second lateral surface opposing the first lateral surface and adjacent to the second side surface. The first connection layer has a first protruding portion extending beyond the first lateral surface and a second protruding portion extending beyond the second lateral surface. The first electrode is in contact with the first protruding portion and the second protruding portion.

    LIGHT-EMITTING DEVICE
    8.
    发明申请
    LIGHT-EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号：US20170047478A1

    公开(公告)日：2017-02-16

    申请号：US15335078

    申请日：2016-10-26

    Applicant: EPISTAR CORPORATION

    Inventor： Chih-Chiang LU ,  Yi-Chieh LIN ,  Wen-Luh LIAO ,  Shou-Lung CHEN ,  Chien-Fu HUANG

    IPC: H01L33/08 ,  H01L33/00 ,  H01L33/50 ,  H01L33/62 ,  H01L33/10 ,  H01L33/56

    CPC classification number: H01L33/08 ,  H01L27/15 ,  H01L33/005 ,  H01L33/0062 ,  H01L33/10 ,  H01L33/50 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00014

    Abstract: A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a wavelength filter between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the wavelength filter and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap.

    Abstract translation: 一种发光器件包括：第一发光半导体堆叠，包括第一有源层; 在第一发光半导体堆叠下面的第二发光半导体堆叠，其中第二发光半导体堆叠包括第二有源层; 第一发光半导体堆叠和第二发光半导体堆叠之间的波长滤波器; 所述波长滤波器和所述第二发光半导体叠层之间的保护层; 并且其中所述第一发光半导体堆叠还包括夹着所述第一有源层的第一半导体层和第二半导体层，所述第二发光半导体堆叠还包括夹持所述第二有源层的第三半导体层和第四半导体层， 其中所述第二半导体层具有第一带隙，所述第三半导体层具有第二带隙，并且所述保护层在所述第一带隙和所述第二带隙之间具有第三带隙。

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