公开(公告)号：USD1062026S1

公开(公告)日：2025-02-11

申请号：US29858208

申请日：2022-10-28

Applicant: EPISTAR CORPORATION

Designer： Hui-Fang Kao ,  Yao-Ning Chan ,  Yi-Tang Lai ,  Yun-Chung Chou ,  Shih-Chang Lee ,  Chen Ou

公开(公告)号：USD972769S1

公开(公告)日：2022-12-13

申请号：US29776714

申请日：2021-03-31

Applicant: EPISTAR CORPORATION

Designer： Hui-Fang Kao ,  Yao-Ning Chan ,  Yi-Tang Lai ,  Yun-Chung Chou ,  Shih-Chang Lee ,  Chen Ou

公开(公告)号：US12230736B2

公开(公告)日：2025-02-18

申请号：US17211331

申请日：2021-03-24

Applicant: EPISTAR CORPORATION

Inventor： Jian-Zhi Chen ,  Yen-Chun Tseng ,  Hui-Fang Kao ,  Yao-Ning Chan ,  Yi-Tang Lai ,  Yun-Chung Chou ,  Shih-Chang Lee ,  Chen Ou

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/20 ,  H01L33/36 ,  H01L33/30 ,  H01L33/32 ,  H01L33/46

Abstract: The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface. The first bottom surface is lower than the second bottom surface, and the first top surface is higher than the second top surface in a cross-sectional view of the semiconductor light-emitting device.