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    Damascene process for use in fabricating semiconductor structures having micro/nano gaps
    1.
    发明授权
    Damascene process for use in fabricating semiconductor structures having micro/nano gaps 有权
    用于制造具有微/纳米间隙的半导体结构的镶嵌工艺

    公开(公告)号：US08329559B2

    公开(公告)日：2012-12-11

    申请号：US11737545

    申请日：2007-04-19

    Applicant: Hideki Takeuchi ,  Emmanuel P. Quevy ,  Tsu-Jae King ,  Roger T. Howe

    Inventor： Hideki Takeuchi ,  Emmanuel P. Quevy ,  Tsu-Jae King ,  Roger T. Howe

    IPC: H01L21/46 ,  H01L21/78 ,  H01L21/301

    CPC classification number: B81C1/00142 ,  B81B2201/0271 ,  B81C2201/0109 ,  Y10S438/933

    Abstract: In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrificial material to form at least one blade of sacrificial material, c) depositing a structural layer over the sacrificial layer, and d) removing the sacrificial layer including the blade of the sacrificial material with a narrow gap remaining in the structural layer where the blade of sacrificial material was removed.

    Abstract translation: 在制造微机电结构（MEMS）中，在MEMS中形成窄间隙的方法包括：a）在支撑衬底的表面上沉积牺牲材料层，b）光致抗蚀剂掩模并且至少部分蚀刻牺牲材料以形成 至少一个牺牲材料刀片，c）在所述牺牲层上沉积结构层，以及d）去除包括所述牺牲材料刀片的所述牺牲层，其中所述牺牲材料刀片被去除的所述结构层中残留有窄间隙 。

    MEMS coupler and method to form the same
    2.
    发明授权
    MEMS coupler and method to form the same 有权
    MEMS耦合器和方法形成相同

    公开(公告)号：US08716815B2

    公开(公告)日：2014-05-06

    申请号：US12927312

    申请日：2010-11-10

    Applicant: Emmanuel P. Quevy ,  Roger T. Howe

    Inventor： Emmanuel P. Quevy ,  Roger T. Howe

    IPC: H01L27/14

    CPC classification number: B81C1/00039 ,  B81B2201/0271

    Abstract: A MEMS coupler and a method to form a MEMS structure having such a coupler are described. In an embodiment, a MEMS structure comprises a member and a substrate. A coupler extends through a portion of the member and connects the member with the substrate. The member is comprised of a first material and the coupler is comprised of a second material. In one embodiment, the first and second materials are substantially the same. In one embodiment, the second material is conductive and is different than the first material. In another embodiment, a method for fabricating a MEMS structure comprises first forming a member above a substrate. A coupler comprised of a conductive material is then formed to connect the member with the substrate.

    Abstract translation: 描述了MEMS耦合器和形成具有这种耦合器的MEMS结构的方法。 在一个实施例中，MEMS结构包括构件和衬底。 耦合器延伸穿过构件的一部分并将构件与衬底连接。 该构件由第一材料构成，并且该耦合器由第二材料构成。 在一个实施例中，第一和第二材料基本相同。 在一个实施例中，第二材料是导电的并且不同于第一材料。 在另一个实施例中，一种用于制造MEMS结构的方法包括首先在衬底上形成构件。 然后形成由导电材料构成的耦合器，以将该构件与衬底连接。

    Planar microshells for vacuum encapsulated devices and damascene method of manufacture
    5.
    发明授权
    Planar microshells for vacuum encapsulated devices and damascene method of manufacture 有权
    用于真空封装装置的平面微壳和大马士革制造方法

    公开(公告)号：US08313970B2

    公开(公告)日：2012-11-20

    申请号：US13017892

    申请日：2011-01-31

    Applicant: Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

    Inventor： Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

    IPC: H01L21/00

    CPC classification number: B81C1/00293 ,  B81B7/02 ,  B81C1/00246 ,  B81C2203/0136 ,  B81C2203/0145 ,  B81C2203/0721 ,  B81C2203/0735 ,  B81C2203/0771

    Abstract: Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell.

    Abstract translation: 用于MEMS和微电子等器件封装的低温多层平面微型壳体。 微壳包括平面穿孔的预密封层，在其下面接近非平面牺牲层，以及密封层，用于在去除牺牲材料之后封闭预密封层中的穿孔。 在一个实施例中，预密封层具有形成有镶嵌工艺的穿孔，以与微壳下方的腔室自对准。 密封层可以包括非密封层，以物理地封闭穿孔，并且在非密封闭塞层上方具有密封层以密封穿孔。 在特定实施例中，密封层是金属，其电耦合到与微壳相邻的导电层，以电微接地微壳。

    Thin film microshells incorporating a getter layer
    6.
    发明授权
    Thin film microshells incorporating a getter layer 失效
    包含吸气剂层的薄膜微壳

    公开(公告)号：US07736929B1

    公开(公告)日：2010-06-15

    申请号：US11716422

    申请日：2007-03-09

    Applicant: Pezhman Monadgemi ,  Emmanuel P. Quevy ,  Roger T. Howe

    Inventor： Pezhman Monadgemi ,  Emmanuel P. Quevy ,  Roger T. Howe

    IPC: H01L21/00 ,  H01L21/461 ,  H01L21/50 ,  C23F1/00 ,  C25F3/00

    CPC classification number: B81B7/0038 ,  B81C2203/0136 ,  B81C2203/0145

    Abstract: Low temperature, multi-layered microshells for encapsulation of devices such as MEMS and microelectronics. The microshells may include a perforated pre-sealing layer, below which a sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. The pre-sealing layer includes a large surface area getter layer to remove contaminants from the space ultimately enclosed by the microshell to improve the pressure control and cleanliness of the microshell.

    Abstract translation: 用于封装MEMS和微电子等器件的低温多层微型壳体。 微壳可以包括穿孔的预密封层，在其下方存取牺牲层，以及密封层，用于在去除牺牲材料之后封闭预密封层中的穿孔。 预密封层包括大的表面积吸气剂层，以从最终由微壳包围的空间去除污染物，以改善微壳的压力控制和清洁度。

    PLANAR MICROSHELLS FOR VACUUM ENCAPSULATED DEVICES AND DAMASCENE METHOD OF MANUFACTURE
    8.
    发明申请
    PLANAR MICROSHELLS FOR VACUUM ENCAPSULATED DEVICES AND DAMASCENE METHOD OF MANUFACTURE 有权
    用于真空封装装置的平面微阵列和制造方法

    公开(公告)号：US20110121416A1

    公开(公告)日：2011-05-26

    申请号：US13017892

    申请日：2011-01-31

    Applicant: Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

    Inventor： Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

    IPC: H01L29/84 ,  H01L21/04

    CPC classification number: B81C1/00293 ,  B81B7/02 ,  B81C1/00246 ,  B81C2203/0136 ,  B81C2203/0145 ,  B81C2203/0721 ,  B81C2203/0735 ,  B81C2203/0771

    Abstract: Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell.

    Abstract translation: 用于MEMS和微电子等器件封装的低温多层平面微型壳体。 微壳包括平面穿孔的预密封层，在其下面接近非平面牺牲层，以及密封层，用于在去除牺牲材料之后封闭预密封层中的穿孔。 在一个实施例中，预密封层具有形成有镶嵌工艺的穿孔，以与微壳下方的腔室自对准。 密封层可以包括非密封层，以物理地封闭穿孔，并且在非密封闭塞层上方具有密封层以密封穿孔。 在特定实施例中，密封层是金属，其电耦合到与微壳相邻的导电层，以电微接地微壳。

    Mems coupler and method to form the same
    10.
    发明申请
    Mems coupler and method to form the same 有权
    Mems耦合器和方法形成相同

    公开(公告)号：US20110068422A1

    公开(公告)日：2011-03-24

    申请号：US12927312

    申请日：2010-11-10

    Applicant: Emmanuel P. Quevy ,  Roger T. Howe

    Inventor： Emmanuel P. Quevy ,  Roger T. Howe

    IPC: H01L29/66

    CPC classification number: B81C1/00039 ,  B81B2201/0271

    Abstract: A MEMS coupler and a method to form a MEMS structure having such a coupler are described. In an embodiment, a MEMS structure comprises a member and a substrate. A coupler extends through a portion of the member and connects the member with the substrate. The member is comprised of a first material and the coupler is comprised of a second material. In one embodiment, the first and second materials are substantially the same. In one embodiment, the second material is conductive and is different than the first material. In another embodiment, a method for fabricating a MEMS structure comprises first forming a member above a substrate. A coupler comprised of a conductive material is then formed to connect the member with the substrate.

    Abstract translation: 描述了MEMS耦合器和形成具有这种耦合器的MEMS结构的方法。 在一个实施例中，MEMS结构包括构件和衬底。 耦合器延伸穿过构件的一部分并将构件与衬底连接。 该构件由第一材料构成，并且该耦合器由第二材料构成。 在一个实施例中，第一和第二材料基本相同。 在一个实施例中，第二材料是导电的并且不同于第一材料。 在另一个实施例中，一种用于制造MEMS结构的方法包括首先在衬底上形成构件。 然后形成由导电材料构成的耦合器，以将该构件与衬底连接。

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