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公开(公告)号：US20130180768A1
公开(公告)日：2013-07-18
申请号：US13735779
申请日：2013-01-07
Applicant: ENTHONE INC.
Inventor： Yung-Herng Yau , Thomas B. Richardson , Joseph A. Abys , Karl F. Wengenroth , Anthony Fiore , Chen Xu , Chonglun Fan , John Fudala
CPC classification number: H05K1/09 , C09D1/00 , C23C18/16 , C23C18/1614 , C23C18/1616 , C23C18/1633 , C23C18/1683 , C23C18/1687 , C23C18/42 , C23C18/44 , C23C18/54 , C23C22/06 , C23C22/58 , C25D3/46 , C25D3/56 , C25D3/64 , H05K3/244 , H05K3/422 , H05K2203/0257 , H05K2203/073 , Y10S205/916
Abstract: Compositions and methods for silver plating onto metal surfaces such as PWBs in electronics manufacture to produce a silver plating which is greater than 80 atomic % silver, tarnish resistant, and has good solderability.
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公开(公告)号：US20160234947A1
公开(公告)日：2016-08-11
申请号：US15134701
申请日：2016-04-21
Applicant: Enthone, Inc.
Inventor： Abayomi I. Owei , Joseph A. Abys , Theodore Antonellis , Eric Walch
IPC: H05K3/38
CPC classification number: H05K3/385 , B05D3/10 , B05D5/10 , C23C22/52 , C23C22/63 , C23C22/73 , C23C22/78 , C23F1/18 , C23G1/20 , H05K3/383
Abstract: Compositions and methods for enhancing adhesion between a copper conducting layer and a dielectric material during manufacture of a printed circuit board. Conditioning compositions contain a functional organic compound and preferably a transition metal ion. The functional organic compound, e.g., a purine derivative, is capable of forming a self-assembled monolayer. Adhesion promoting compositions contain an acid, preferably an inorganic acid, and an oxidant. The latter compositions may also contain a corrosion inhibitor and/or a transition metal ion selected from among Zn, Ni, Co, Cu, Ag, Au, Pd or another Pt group metal. The corrosion inhibitor may comprise a nitrogen-containing aromatic heterocyclic compound.
Abstract translation: 用于在制造印刷电路板期间增强铜导电层和电介质材料之间的粘附性的组合物和方法。 调理组合物含有功能性有机化合物，优选过渡金属离子。 功能性有机化合物，例如嘌呤衍生物，能够形成自组装单层。 粘合促进组合物含有酸，优选无机酸和氧化剂。 后一种组合物还可以含有选自Zn，Ni，Co，Cu，Ag，Au，Pd或其它Pt族金属中的腐蚀抑制剂和/或过渡金属离子。 腐蚀抑制剂可以包含含氮芳族杂环化合物。
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公开(公告)号：US20160254156A1
公开(公告)日：2016-09-01
申请号：US15148738
申请日：2016-05-06
Applicant: Enthone Inc.
Inventor： Thomas B. Richardson , Joseph A. Abys , Wenbo Shao , Chen Wang , Vincent Paneccasio , Cai Wang , Xuan Lin , Theodore Antonellis
IPC: H01L21/288 , C25D5/18 , C25D7/12 , C25D5/02 , H01L21/768 , C25D3/38
CPC classification number: H01L21/2885 , C25D3/38 , C25D5/02 , C25D5/18 , C25D7/123 , H01L21/76873 , H01L21/76879 , H01L21/76898
Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.
Abstract translation: 一种用于在半导体集成电路器件中通过硅通孔特征进行金属化的工艺，该过程包括在填充周期期间使电路的极性反转一段间隔以在所述金属化衬底处产生阳极电位，并从铜表面解吸整齐器 通孔，然后通过重新建立通孔内的铜的表面作为电路中的阴极来恢复铜沉积，由此产生铜填充的通孔特征。
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Patent Agency Ranking
公开(公告)号：US10103029B2
公开(公告)日：2018-10-16
申请号：US15148738
申请日：2016-05-06
Applicant: MacDermid Enthone Inc.
Inventor： Thomas B. Richardson , Joseph A. Abys , Wenbo Shao , Chen Wang , Vincent Paneccasio , Cai Wang , Sean Xuan Lin , Theodore Antonellis
IPC: H01L21/28 , H01L21/288 , C25D3/38 , C25D5/18 , H01L21/768 , C25D7/12 , C25D5/02
Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.
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公开(公告)号：US09730321B2
公开(公告)日：2017-08-08
申请号：US14666990
申请日：2015-03-24
Applicant: Enthone Inc.
Inventor： Yung-Herng Yau , Thomas B. Richardson , Joseph A. Abys , Karl F. Wengenroth , Anthony Fiore , Chen Xu , Chonglun Fan , John Fudala
IPC: H05K1/09 , C23C18/40 , H01B1/02 , C23C22/06 , C23C22/58 , C23C18/44 , C23C18/42 , C25D3/64 , C25D3/56 , C25D3/46 , C23C18/54 , H05K3/24 , C09D1/00 , C23C18/16 , H05K3/42
CPC classification number: H05K1/09 , C09D1/00 , C23C18/16 , C23C18/1614 , C23C18/1616 , C23C18/1633 , C23C18/1683 , C23C18/1687 , C23C18/42 , C23C18/44 , C23C18/54 , C23C22/06 , C23C22/58 , C25D3/46 , C25D3/56 , C25D3/64 , H05K3/244 , H05K3/422 , H05K2203/0257 , H05K2203/073 , Y10S205/916
Abstract: Compositions and methods for silver plating onto metal surfaces such as PWBs in electronics manufacture to produce a silver plating which is greater than 80 atomic % silver, tarnish resistant, and has good solderability.
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公开(公告)号：US20160032479A1
公开(公告)日：2016-02-04
申请号：US14776879
申请日：2014-03-14
Applicant: ENTHONE INC.
Inventor： Jingye Li , Joseph A. Abys , Edward J. Kudrak, JR.
Abstract: Electrolytic plating compositions and electrolytic plating processes for the co-deposition of silver or silver alloy with fluoropolymer nanoparticles are provided. The silver or silver alloy composite coating containing fluoropolymer nanoparticles has enhanced functional properties such as a reduced coefficient of friction. The electrolytic plating composition comprises: (a) a silver ion source comprising silver methane sulfonate (Ag-MSA); (b) a complexing agent comprising a compound comprising a nitrogen-containing heterocyclic ring; (c) a pre-mix dispersion comprising fluoropolymer nanoparticles particles having a mean particle size of from about 10 nm and about 500 nm and a surfactant; and (d) an auxiliary surfactant comprising a cationic fluorosurfactant, wherein the composition has a pH of from about 8 to about 14.
Abstract translation: 提供了电解电镀组合物和用于与含氟聚合物纳米颗粒共沉积银或银合金的电解电镀方法。 含有氟聚合物纳米颗粒的银或银合金复合涂层具有增强的功能性能，例如降低的摩擦系数。 电解电镀组合物包括：（a）包含甲磺酸银（Ag-MSA）的银离子源; （b）络合剂，其包含含有含氮杂环的化合物; （c）包含平均粒径为约10nm至约500nm的含氟聚合物纳米粒子的预混合分散体和表面活性剂; 和（d）包含阳离子含氟表面活性剂的辅助表面活性剂，其中所述组合物的pH为约8至约14。
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公开(公告)号：US20150257264A1
公开(公告)日：2015-09-10
申请号：US14666990
申请日：2015-03-24
Applicant: Enthone Inc.
Inventor： Yung-Herng Yau , Thomas B. Richardson , Joseph A. Abys , Karl F. Wengenroth , Anthony Fiore , Chen Xu , Chonglun Fan , John Fudala
IPC: H05K1/09
CPC classification number: H05K1/09 , C09D1/00 , C23C18/16 , C23C18/1614 , C23C18/1616 , C23C18/1633 , C23C18/1683 , C23C18/1687 , C23C18/42 , C23C18/44 , C23C18/54 , C23C22/06 , C23C22/58 , C25D3/46 , C25D3/56 , C25D3/64 , H05K3/244 , H05K3/422 , H05K2203/0257 , H05K2203/073 , Y10S205/916
Abstract: Compositions and methods for silver plating onto metal surfaces such as PWBs in electronics manufacture to produce a silver plating which is greater than 80 atomic % silver, tarnish resistant, and has good solderability.
Abstract translation: 在电子制造中的诸如PWB之类的金属表面上镀银的组合物和方法，以产生大于80原子％银的银电镀，抗褪色并具有良好的可焊性。
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公开(公告)号：US08986434B2
公开(公告)日：2015-03-24
申请号：US13735779
申请日：2013-01-07
Applicant: Enthone Inc.
Inventor： Yung-Herng Yau , Thomas B. Richardson , Joseph A. Abys , Karl F. Wengenroth , Anthony Fiore , Chen Xu , Chonglun Fan , John Fudala
IPC: C23C18/42 , C23C18/44 , C23C22/06 , C09D1/00 , C23C18/16 , C23C22/58 , C25D3/64 , C25D3/56 , C25D3/46 , C23C18/54 , H05K3/24 , H05K1/09 , H05K3/42
CPC classification number: H05K1/09 , C09D1/00 , C23C18/16 , C23C18/1614 , C23C18/1616 , C23C18/1633 , C23C18/1683 , C23C18/1687 , C23C18/42 , C23C18/44 , C23C18/54 , C23C22/06 , C23C22/58 , C25D3/46 , C25D3/56 , C25D3/64 , H05K3/244 , H05K3/422 , H05K2203/0257 , H05K2203/073 , Y10S205/916
Abstract: Compositions and methods for silver plating onto metal surfaces such as PWBs in electronics manufacture to produce a silver plating which is greater than 80 atomic % silver, tarnish resistant, and has good solderability.
Abstract translation: 在电子制造中的诸如PWB之类的金属表面上镀银的组合物和方法，以产生大于80原子％银的银电镀，抗褪色并具有良好的可焊性。
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