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公开(公告)号：US20240318342A1
公开(公告)日：2024-09-26
申请号：US18578049
申请日：2022-07-25
Applicant: MacDermid Enthone Inc.
Inventor： Jianwen Han , Pingping Ye , Kyle M Whitten , Stephan I. Braye , Thomas B. Richardson , Elie H. Najjar
Abstract: A copper electrolyte comprising a copper salt, a source of halide ions, and a linear or branched polyhydroxyl. The copper electrolyte is used to deposit copper having a high density of nanotwinned columnar copper grains on a substrate. The linear or branched polyhydroxy] may comprise a reaction product between 2,3-epoxy-1-propanol and an amine compound. A leveler comprising a polymeric quaternary nitrogen species and/or an accelerator comprising an organic sulfur compound may also be added to the copper electrolyte so long as the nanotwinned columnar copper grains are maintained.
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公开(公告)号：US20240110306A1
公开(公告)日：2024-04-04
申请号：US18534819
申请日：2023-12-11
Applicant: MacDermid Enthone Inc.
Inventor： Kyle M. Whitten , Stephan I. Braye , Jianwen Han , Pingping Ye , Thomas B. Richardson , Elie H. Najjar
Abstract: A copper electroplating solution comprising a copper salt, a source of halide ions, and a linear or branched polyhydroxyl. The copper electroplating solution is used to deposit copper having a high density of nanotwinned columnar copper grains on a substrate. The linear or branched polyhydroxyl may comprise a reaction product between 2,3-epoxy-1-propanol and aminic alcohol or ammonium alcohol.
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公开(公告)号：US20160254156A1
公开(公告)日：2016-09-01
申请号：US15148738
申请日：2016-05-06
Applicant: Enthone Inc.
Inventor： Thomas B. Richardson , Joseph A. Abys , Wenbo Shao , Chen Wang , Vincent Paneccasio , Cai Wang , Xuan Lin , Theodore Antonellis
IPC: H01L21/288 , C25D5/18 , C25D7/12 , C25D5/02 , H01L21/768 , C25D3/38
CPC classification number: H01L21/2885 , C25D3/38 , C25D5/02 , C25D5/18 , C25D7/123 , H01L21/76873 , H01L21/76879 , H01L21/76898
Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.
Abstract translation: 一种用于在半导体集成电路器件中通过硅通孔特征进行金属化的工艺，该过程包括在填充周期期间使电路的极性反转一段间隔以在所述金属化衬底处产生阳极电位，并从铜表面解吸整齐器 通孔，然后通过重新建立通孔内的铜的表面作为电路中的阴极来恢复铜沉积，由此产生铜填充的通孔特征。
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公开(公告)号：US20210310141A1
公开(公告)日：2021-10-07
申请号：US17347934
申请日：2021-06-15
Applicant: MacDermid Enthone Inc.
Inventor： Vincent Paneccasio, JR. , Kyle Whitten , Thomas B. Richardson , Ivan Li
Abstract: An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic compostion. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P:
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公开(公告)号：US10519557B2
公开(公告)日：2019-12-31
申请号：US15412809
申请日：2017-01-23
Applicant: MacDermid Enthone Inc.
Inventor： Vincent Paneccasio, Jr. , Kyle Whitten , Thomas B. Richardson , Ivan Li
IPC: C25D3/38 , C08G65/333 , H05K3/18 , H05K3/42 , C25D7/12 , C08G65/24 , C08L71/03 , H01L21/768 , H01L21/48 , H01L21/288
Abstract: An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P:
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Patent Agency Ranking
公开(公告)号：US20130180768A1
公开(公告)日：2013-07-18
申请号：US13735779
申请日：2013-01-07
Applicant: ENTHONE INC.
Inventor： Yung-Herng Yau , Thomas B. Richardson , Joseph A. Abys , Karl F. Wengenroth , Anthony Fiore , Chen Xu , Chonglun Fan , John Fudala
CPC classification number: H05K1/09 , C09D1/00 , C23C18/16 , C23C18/1614 , C23C18/1616 , C23C18/1633 , C23C18/1683 , C23C18/1687 , C23C18/42 , C23C18/44 , C23C18/54 , C23C22/06 , C23C22/58 , C25D3/46 , C25D3/56 , C25D3/64 , H05K3/244 , H05K3/422 , H05K2203/0257 , H05K2203/073 , Y10S205/916
Abstract: Compositions and methods for silver plating onto metal surfaces such as PWBs in electronics manufacture to produce a silver plating which is greater than 80 atomic % silver, tarnish resistant, and has good solderability.
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公开(公告)号：US20200063280A1
公开(公告)日：2020-02-27
申请号：US16672720
申请日：2019-11-04
Applicant: MacDermid Enthone Inc.
Inventor： Vincent Paneccasio , Kyle Whitten , Thomas B. Richardson , Ivan Li
Abstract: An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P:
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公开(公告)号：US10103029B2
公开(公告)日：2018-10-16
申请号：US15148738
申请日：2016-05-06
Applicant: MacDermid Enthone Inc.
Inventor： Thomas B. Richardson , Joseph A. Abys , Wenbo Shao , Chen Wang , Vincent Paneccasio , Cai Wang , Sean Xuan Lin , Theodore Antonellis
IPC: H01L21/28 , H01L21/288 , C25D3/38 , C25D5/18 , H01L21/768 , C25D7/12 , C25D5/02
Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.
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公开(公告)号：US09730321B2
公开(公告)日：2017-08-08
申请号：US14666990
申请日：2015-03-24
Applicant: Enthone Inc.
Inventor： Yung-Herng Yau , Thomas B. Richardson , Joseph A. Abys , Karl F. Wengenroth , Anthony Fiore , Chen Xu , Chonglun Fan , John Fudala
IPC: H05K1/09 , C23C18/40 , H01B1/02 , C23C22/06 , C23C22/58 , C23C18/44 , C23C18/42 , C25D3/64 , C25D3/56 , C25D3/46 , C23C18/54 , H05K3/24 , C09D1/00 , C23C18/16 , H05K3/42
CPC classification number: H05K1/09 , C09D1/00 , C23C18/16 , C23C18/1614 , C23C18/1616 , C23C18/1633 , C23C18/1683 , C23C18/1687 , C23C18/42 , C23C18/44 , C23C18/54 , C23C22/06 , C23C22/58 , C25D3/46 , C25D3/56 , C25D3/64 , H05K3/244 , H05K3/422 , H05K2203/0257 , H05K2203/073 , Y10S205/916
Abstract: Compositions and methods for silver plating onto metal surfaces such as PWBs in electronics manufacture to produce a silver plating which is greater than 80 atomic % silver, tarnish resistant, and has good solderability.
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公开(公告)号：US09657402B2
公开(公告)日：2017-05-23
申请号：US14962863
申请日：2015-12-08
Applicant: ENTHONE INC.
Inventor： Stefan Schäfer , Thomas B. Richardson
CPC classification number: C25D3/46
Abstract: The invention relates to a cyanide-free electrolyte composition for depositing a silver or silver alloy layer on a substrate as well as a method for depositing silver or silver alloy layers with a cyanide-free electrolyte composition. The electrolyte composition according to the invention comprises at least one silver ion source, a sulfonic acid and/or a sulfonic acid derivative, a wetting agent and a hydantoin. The silver or silver alloy layers deposited from the inventive electrolyte composition by the method according to the invention are dull and ductile.
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