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    Bendable Nickel Plating on Flexible Substrates
    1.
    发明申请
    Bendable Nickel Plating on Flexible Substrates 有权

    公开(公告)号：US20250109499A1

    公开(公告)日：2025-04-03

    申请号：US18374804

    申请日：2023-09-29

    Applicant: MacDermid Enthone Inc.

    Inventor： Aparna Iyer ,  Ernest Long ,  Kishore Viswanathan

    IPC: C23C18/36 ,  C23C18/16 ,  C23C18/18

    Abstract: A method of producing a flexible nickel phosphorus plating layer on a substrate. The substrate comprises a dielectric material with a copper layer thereon. The method includes the steps of (1) activating the substrate with a palladium activation solution to catalyze the substrate, and (2) contacting the activated substrate with an electroless nickel phosphorus plating solution comprising (i) a source of nickel ions; (ii) a source of hypophosphite ions; (iii) at least one complexing agent; and (iv) an organic flex additive. The nickel phosphorus plating layer deposited on the substrate exhibits a columnar grain structure.

    Method and Wet Chemical Compositions for Diffusion Barrier Formation
    4.
    发明申请
    Method and Wet Chemical Compositions for Diffusion Barrier Formation 有权

    公开(公告)号：US20220259724A1

    公开(公告)日：2022-08-18

    申请号：US17665871

    申请日：2022-02-07

    Applicant: MacDermid Enthone Inc.

    Inventor： Richard W. Hurtubise ,  Eric Yakobson ,  Shaopeng Sun ,  Taylor L. Wilkins ,  Elie H. Najjar ,  Wenbo Shao

    IPC: C23C16/40 ,  C23C14/02 ,  C23C14/08 ,  C23C16/02

    Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.

    COBALT CHEMISTRY FOR SMOOTH TOPOLOGY
    5.
    发明申请
    COBALT CHEMISTRY FOR SMOOTH TOPOLOGY 有权

    公开(公告)号：US20220136123A1

    公开(公告)日：2022-05-05

    申请号：US17524450

    申请日：2021-11-11

    Applicant: MacDermid Enthone Inc.

    Inventor： Shaopeng Sun ,  Kyle Whitten ,  Stephan Braye ,  Elie Najjar

    IPC: C25D3/16 ,  C25D5/02 ,  C25D5/18 ,  C25D7/12

    Abstract: An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.

    Cobalt Filling of Interconnects in Microelectronics
    8.
    发明申请
    Cobalt Filling of Interconnects in Microelectronics 有权

    公开(公告)号：US20210222314A1

    公开(公告)日：2021-07-22

    申请号：US17220540

    申请日：2021-04-01

    Applicant: MacDermid Enthone Inc.

    Inventor： John Commander ,  Vincent Paneccasio, JR. ,  Eric Rouya ,  Kyle Whitten ,  Shaopeng Sun ,  Jianwen Han

    IPC: C25D7/12 ,  C25D3/16 ,  C25D3/56

    Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising sub-micron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

    Carbon-Based Direct Plating Process
    9.
    发明申请
    Carbon-Based Direct Plating Process 有权

    公开(公告)号：US20210204412A1

    公开(公告)日：2021-07-01

    申请号：US17202745

    申请日：2021-03-16

    Applicant: MacDermid Enthone Inc.

    Inventor： Roger Bernards ,  James Martin ,  Jason J. Carver

    IPC: H05K3/42 ,  H05K3/00 ,  C25D5/54 ,  H05K3/38

    Abstract: A method of preparing a non-conductive substrate to allow metal plating thereon. The method includes the steps of a) contacting the non-conductive substrate with a conditioner comprising a conditioning agent; b) applying a carbon-based dispersion to the conditioned substrate, wherein the carbon-based dispersion comprises carbon or graphite particles dispersed in a liquid solution; and c) etching the non-conductive substrate. The etching step is performed before the liquid carbon-based dispersion dries on the non-conductive substrate.

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