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公开(公告)号：US20230303389A1
公开(公告)日：2023-09-28
申请号：US17702599
申请日：2022-03-23
Applicant: Exo Imaging, Inc.
Inventor： Liang WANG , David KREVOR , Naresh MANTRAVADI , Brian BIRCUMSHAW , Jason TAUSCHER
CPC classification number: B81C1/00825 , B81B7/0016 , B81B2201/0271 , B81B2207/012 , B81C2203/0792
Abstract: Described herein are methods and systems useful in the fabrication of ultrasound transducer devices. Fabrication of ultrasound transducer devices can comprise manipulation of components having extremely small cross-sectional thicknesses, which can increase the risk of damage to the components. For example, inadvertent application of forces sufficient to damage such components is a significant risk during fabrication steps. As described herein, the risk of damage to an ultrasound transducer device component having a small cross-sectional thickness, such as an ultrasound microelectromechanical system (MEMS) wafer, can be reduced by partially or completely coating or filling all or a portion of the component with a stabilizing material, for example, prior to subjecting the component to forces associated with manipulation of the component during the fabrication process.
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公开(公告)号：US20230002213A1
公开(公告)日：2023-01-05
申请号：US17364381
申请日：2021-06-30
Applicant: Exo Imaging, Inc.
Inventor： Naresh MANTRAVADI , Haesung KWON , Brian BIRCUMSHAW
Abstract: Disclosed is a multi-silicon on insulator (SOI) micromachined ultrasonic transducer (MUT) device. The device comprises a multi-SOI substrate and a MUT. The MUT is affixed to a surface of the multi-SOI substrate. The multi-SOI substrate has a first SOI layer and at least a second SOI layer disposed above the first SOI layer. The first SOI layer and the second SOI layer each comprise an insulating layer and a semiconducting layer. The first SOI layer further defines a cavity located under a membrane of a MUT and one or more trenches at least partially around a perimeter of the cavity.
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