公开(公告)号：US12107137B2

公开(公告)日：2024-10-01

申请号：US17834089

申请日：2022-06-07

Applicant: FLOSFIA INC.

Inventor： Mitsuru Okigawa ,  Fujio Okui ,  Yasushi Higuchi ,  Koji Amazutsumi ,  Hidetaka Shibata ,  Yuji Kato ,  Atsushi Terai

IPC: H01L29/06 ,  H01L29/47 ,  H01L29/872

CPC classification number: H01L29/475 ,  H01L29/0649 ,  H01L29/872

Abstract: Provided is a semiconductor device in which a leakage current is reduced, the semiconductor device which is particularly useful for power devices. A semiconductor device including at least: an n+-type semiconductor layer, which contains a crystalline oxide semiconductor as a major component; an n−-type semiconductor layer that is placed on the n+-type semiconductor layer, the n−-type semiconductor layer containing a crystalline oxide semiconductor as a major component; a high-resistance layer with at least a part thereof being embedded in the n−-type semiconductor layer, the high-resistance layer having a bottom surface located at a distance of less than 1.5 μm from an upper surface of the n+-type semiconductor layer; and a Schottky electrode that forms a Schottky junction with the n−-type semiconductor layer, the Schottky electrode having an edge located on the high-resistance layer.

公开(公告)号：US12289917B2

公开(公告)日：2025-04-29

申请号：US17834129

申请日：2022-06-07

Applicant: FLOSFIA INC.

Inventor： Mitsuru Okigawa ,  Fujio Okui ,  Yasushi Higuchi ,  Koji Amazutsumi ,  Hidetaka Shibata ,  Yuji Kato ,  Atsushi Terai

IPC: H10D8/60 ,  H10D62/80

Abstract: Provided is a semiconductor device in which a leakage current is reduced, the semiconductor device which is particularly useful for power devices. A semiconductor device including at least: an n+-type semiconductor layer, which contains a crystalline oxide semiconductor as a major component; an n−-type semiconductor layer that is placed on the n+-type semiconductor layer, the n−-type semiconductor layer containing a crystalline oxide semiconductor as a major component; a high-resistance layer with at least a part thereof being embedded in the n−-type semiconductor layer, a depth d (μm) of the part embedded in the n−-type semiconductor layer satisfying d≥1.4; and a Schottky electrode that forms a Schottky junction with the n−-type semiconductor layer, the Schottky electrode having an edge located on the high-resistance layer.