公开(公告)号：US20220406943A1

公开(公告)日：2022-12-22

申请号：US17890477

申请日：2022-08-18

Applicant: FLOSFIA INC.

Inventor： Katsuaki KAWARA

IPC: H01L29/786 ,  H01L29/24 ,  H01L23/367 ,  H01L23/42 ,  H01L21/02 ,  C30B25/02 ,  C30B29/16

Abstract: Provided is a semiconductor device, including at least: a semiconductor layer; and a gate electrode that is arranged directly or via another layer on the semiconductor layer, the semiconductor device being configured in such a manner as to cause a current to flow in the semiconductor layer at least in a first direction that is along with an interface between the semiconductor layer and the gate electrode, the semiconductor layer having a corundum structure, a direction of an m-axis in the semiconductor layer being the first direction.

公开(公告)号：US20210335609A1

公开(公告)日：2021-10-28

申请号：US17239986

申请日：2021-04-26

Applicant: FLOSFIA INC.

Inventor： Yuichi OSHIMA ,  Katsuaki KAWARA

IPC: H01L21/02 ,  H01L29/04 ,  H01L29/24 ,  C30B25/04 ,  C30B25/18 ,  C30B29/16

Abstract: A high-quality crystalline film having less impurity of Si and the like and useful in semiconductor devices is provided. A crystalline film containing a crystalline metallic oxide including gallium as a main component, wherein the crystalline film includes a Si in a content of 2×1015 cm−3 or less.

公开(公告)号：US20190057866A1

公开(公告)日：2019-02-21

申请号：US16106931

申请日：2018-08-21

Applicant: FLOSFIA INC. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  KYOTO UNIVERSITY ,  SAGA UNIVERSITY

Inventor： Yuichi OSHIMA ,  Shizuo FUJITA ,  Kentaro KANEKO ,  Makoto KASU ,  Katsuaki KAWARA ,  Takashi SHINOHE ,  Tokiyoshi MATSUDA ,  Toshimi HITORA

IPC: H01L21/02 ,  H01L29/24 ,  C30B25/04 ,  C30B25/18 ,  C30B29/20

Abstract: According to an aspect of a present inventive subject matter, a crystal includes: a corundum-structured oxide semiconductor as a major component, the corundum-structured oxide semiconductor including gallium and/or indium and doped with a dopant including germanium; a principal plane; a carrier concentration that is 1×1018/cm3 or more; and an electron mobility that is 20 cm2/Vs or more.

公开(公告)号：US20190057865A1

公开(公告)日：2019-02-21

申请号：US16106753

申请日：2018-08-21

Applicant: FLOSFIA INC. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  KYOTO UNIVERSITY ,  SAGA UNIVERSITY

Inventor： Yuichi OSHIMA ,  Shizuo FUJITA ,  Kentaro KANEKO ,  Makoto KASU ,  Katsuaki KAWARA ,  Takashi SHINOHE ,  Tokiyoshi MATSUDA ,  Toshimi HITORA

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/04

CPC classification number: H01L21/02565 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02483 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/24 ,  H01L29/872

Abstract: According to an aspect of a present inventive subject matter, a crystalline film includes a crystalline metal oxide as a major component, the crystalline film includes a corundum structure, a surface area that is 9 μm2 or more, and a dislocation density that is less than 5×106cm−2.

公开(公告)号：US20190055646A1

公开(公告)日：2019-02-21

申请号：US16106554

申请日：2018-08-21

Applicant: FLOSFIA INC. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Yuichi OSHIMA ,  Katsuaki KAWARA ,  Takashi SHINOHE ,  Tokiyoshi MATSUDA ,  Toshimi HITORA

IPC: C23C16/40 ,  C23C16/06 ,  C23C16/455 ,  C30B29/16 ,  C30B25/14

Abstract: According to an aspect of a present inventive subject matter, a method for producing a crystalline film includes gasifying a metal source to turn the metal source into a metal-containing raw-material gas; supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto a substrate; and supplying a reactive gas into the reaction chamber onto the substrate to form a crystalline film under a gas flow of the reactive gas.

公开(公告)号：US20190055667A1

公开(公告)日：2019-02-21

申请号：US16106864

申请日：2018-08-21

Applicant: FLOSFIA INC. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  KYOTO UNIVERSITY ,  SAGA UNIVERSITY

Inventor： Yuichi OSHIMA ,  Shizuo FUJITA ,  Kentaro KANEKO ,  Makoto KASU ,  Katsuaki KAWARA ,  Takashi SHINOHE ,  Tokiyoshi MATSUDA ,  Toshimi HITORA

IPC: C30B25/18 ,  H01L21/02 ,  H01L21/78 ,  C30B25/04 ,  C30B29/16

Abstract: According to an aspect of a present inventive subject matter, a method for producing a crystalline film includes; gasifying a metal source containing a metal to turn the metal source into a metal-containing raw-material gas; supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto a substrate including a buffer layer; and supplying a reactive gas into the reaction chamber onto the substrate to form a crystalline film on the substrate under a gas flow of the reactive gas.

公开(公告)号：US20180097073A1

公开(公告)日：2018-04-05

申请号：US15717145

申请日：2017-09-27

Applicant: FLOSFIA INC.

Inventor： Masaya ODA ,  Rie TOKUDA ,  Hitoshi KAMBARA ,  Katsuaki KAWARA ,  Toshimi HITORA

IPC: H01L29/24 ,  H01L29/47 ,  H01L29/06

Abstract: In a first aspect of a present inventive subject matter, a semiconductor device includes a semiconductor layer including a crystalline oxide semiconductor that comprises gallium; and a Schottky electrode that is positioned on the semiconductor layer. The semiconductor layer includes a surface area that is 3 mm2 or less.

公开(公告)号：US20220189769A1

公开(公告)日：2022-06-16

申请号：US17684792

申请日：2022-03-02

Applicant: FLOSFIA INC. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Katsuaki KAWARA ,  Yuichi OSHIMA ,  Mitsuru OKIGAWA

IPC: H01L21/02 ,  H01L29/04

Abstract: There is provided a crystalline film including, a crystalline metal oxide as a major component; a corundum structure; a dislocation density of 1×107 cm−2 or less; and a surface area of 10 mm2 or more. There is provided a method of producing a crystalline film comprising, forming a first lateral crystal growth layer on a substrate by first lateral crystal growth; placing a mask on the first lateral crystal growth layer; and forming a second lateral crystal growth layer by second lateral crystal growth.

公开(公告)号：US20210335995A1

公开(公告)日：2021-10-28

申请号：US17239931

申请日：2021-04-26

Applicant: FLOSFIA INC. ,  National Institute for Material Science

Inventor： Yuichi OSHIMA ,  Katsuaki KAWARA

IPC: H01L29/04 ,  H01L21/02 ,  H01L29/24

Abstract: A crystalline multilayer structure having a high-quality crystalline layer and a semiconductor device employing such a crystalline multilayer structure are provided. A crystalline multilayer structure, including a first crystalline layer having a first crystal, and a second crystalline layer stacked on the first crystalline layer and having a second crystal, wherein the first crystal includes polycrystalline κ-Ga2O3 and the second crystal is a single crystal of a crystalline oxide.