公开(公告)号：US20190189441A1

公开(公告)日：2019-06-20

申请号：US16326569

申请日：2017-08-29

Applicant: FLOSFIA INC. ,  KYOTO UNIVERSITY

Inventor： Shizuo FUJITA ,  Kentaro KANEKO ,  Masaya ODA ,  Toshimi HITORA

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/448 ,  H01L29/24 ,  H01L29/737 ,  H01L29/66 ,  H01L29/04 ,  H01L29/872 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/739 ,  H01L33/26

CPC classification number: H01L21/02565 ,  C23C16/40 ,  C23C16/448 ,  C23C16/4486 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/12 ,  H01L29/24 ,  H01L29/4236 ,  H01L29/66969 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/739 ,  H01L29/7395 ,  H01L29/778 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/7827 ,  H01L29/808 ,  H01L29/8083 ,  H01L29/812 ,  H01L29/872 ,  H01L33/26

Abstract: A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution including iridium and a metal that is different from iridium and optionally contained; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base to form a crystal or a mixed crystal of a metal oxide including iridium.

公开(公告)号：US20180097073A1

公开(公告)日：2018-04-05

申请号：US15717145

申请日：2017-09-27

Applicant: FLOSFIA INC.

Inventor： Masaya ODA ,  Rie TOKUDA ,  Hitoshi KAMBARA ,  Katsuaki KAWARA ,  Toshimi HITORA

IPC: H01L29/24 ,  H01L29/47 ,  H01L29/06

Abstract: In a first aspect of a present inventive subject matter, a semiconductor device includes a semiconductor layer including a crystalline oxide semiconductor that comprises gallium; and a Schottky electrode that is positioned on the semiconductor layer. The semiconductor layer includes a surface area that is 3 mm2 or less.

公开(公告)号：US20220302263A1

公开(公告)日：2022-09-22

申请号：US17832984

申请日：2022-06-06

Applicant: FLOSFIA INC.

Inventor： Isao TAKAHASHI ,  Takashi SHINOHE ,  Rie TOKUDA ,  Masaya ODA ,  Toshimi HITORA

IPC: H01L29/227 ,  H01L21/02 ,  H01L29/04 ,  C30B25/02 ,  H01L29/78 ,  H01L29/778 ,  H01L29/808 ,  H01L29/872 ,  H01L29/812 ,  H01L29/12 ,  C23C16/40 ,  C30B29/16 ,  H01L29/739 ,  H01L29/24

Abstract: A crystalline oxide semiconductor film with an enhanced electrical property is provided. By use of a mist CVD apparatus, a crystalline oxide semiconductor film with a corundum structure and a principal plane that is an a-plane or an m-plane was obtained on a crystalline substrate by atomizing a raw-material solution containing a dopant that is an n-type dopant to obtain atomized droplets, carrying the atomized droplets by carrier gas onto the crystalline substrate that is an a-plane corundum-structured crystalline substrate or an m-plane corundum-structured crystalline substrate placed in a film-formation chamber, and the atomized droplets were thermally reacted to form the crystalline oxide semiconductor film on the crystalline substrate.

公开(公告)号：US20210013035A1

公开(公告)日：2021-01-14

申请号：US16332659

申请日：2017-09-14

Applicant: FLOSFIA INC. ,  KYOTO UNIVERSITY

Inventor： Shizuo FUJITA ,  Takayuki UCHIDA ,  Kentaro KANEKO ,  Masaya ODA ,  Toshimi HITORA

IPC: H01L21/02 ,  C23C16/458 ,  C23C16/40

Abstract: A semiconductor film containing silicon that is evenly doped in the semiconductor film with an enhanced semiconductor property and a method of the semiconductor film using a dopant material containing a complex compound that contains at least silicon and a halogen. The complex compound further contains a hydrocarbon group that is optionally substituted or heterocyclic group that is optionally substituted. A semiconductor film containing Si doped into the semiconductor film as a dopant to a depth that is at least 0.3 μm or deeper from a surface of the semiconductor film is obtained by forming the semiconductor film in that the dopant material is doped, the semiconductor film is 100 μm or less in film thickness with carrier density that is 1×1020/cm3 or less and electron mobility that is 1 cm2/Vs or more.

公开(公告)号：US20190305091A1

公开(公告)日：2019-10-03

申请号：US16347360

申请日：2017-11-07

Applicant: FLOSFIA INC.

Inventor： Isao TAKAHASHI ,  Takashi SHINOHE ,  Rie TOKUDA ,  Masaya ODA ,  Toshimi HITORA

IPC: H01L29/227 ,  H01L29/04 ,  H01L21/02

Abstract: A crystalline oxide semiconductor film with an enhanced electrical property is provided. By use of a mist CVD apparatus, a crystalline oxide semiconductor film with a corundum structure and a principal plane that is an a-plane or an m-plane was obtained on a crystalline substrate by atomizing a raw-material solution containing a dopant that is an n-type dopant to obtain atomized droplets, carrying the atomized droplets by carrier gas onto the crystalline substrate that is an a-plane corundum-structured crystalline substrate or an m-plane corundum-structured crystalline substrate placed in a film-formation chamber, and the atomized droplets were thermally reacted to form the crystalline oxide semiconductor film on the crystalline substrate.

公开(公告)号：US20180369861A1

公开(公告)日：2018-12-27

申请号：US16061172

申请日：2016-12-21

Applicant: FLOSFIA INC.

Inventor： Shigetaka KATORI ,  Kazuaki HIROKI ,  Masaya ODA ,  Toshimi HITORA

IPC: B05D3/10 ,  C23C16/448 ,  H01L51/44 ,  B05D3/00

Abstract: According to an object to offer a film in quality with an industrial advantage, a method of forming a film is suggested. An embodiment of a method of the present invention includes turning a raw-material solution containing an aprotic solvent (that may be lactones or lactams) into a mist or droplets (step of atomization), carrying the mist or droplets into a film-formation chamber onto a base that is arranged in the film-formation chamber (step of carrying the mist), and causing a reaction of the mist or droplets preferably at a temperature that is 250° C. or less to form a film on the base (step of forming a film).

公开(公告)号：US20180061952A1

公开(公告)日：2018-03-01

申请号：US15689547

申请日：2017-08-29

Applicant: FLOSFIA INC.

Inventor： Rie TOKUDA ,  Masaya ODA ,  Toshimi HITORA

IPC: H01L29/24 ,  H01L29/04 ,  H01L29/872

CPC classification number: H01L29/24 ,  H01L21/02414 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/02628 ,  H01L21/02631 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/7395 ,  H01L29/7787 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/7828 ,  H01L29/8083 ,  H01L29/872 ,  H01L33/32 ,  H01L33/42

Abstract: In a first aspect of a present inventive subject matter, a crystalline oxide semiconductor film includes a crystalline oxide semiconductor that contains a corundum structure as a major component, a dopant, and an electron mobility that is 30 cm2/Vs or more.