公开(公告)号：US12191372B2

公开(公告)日：2025-01-07

申请号：US17951512

申请日：2022-09-23

Applicant: FLOSFIA INC.

Inventor： Ryohei Kanno ,  Osamu Imafuji ,  Kazuyoshi Norimatsu ,  Yuji Kato

IPC: H01L29/45 ,  H01L23/367 ,  H01L29/24 ,  H01L29/66 ,  H01L29/872 ,  H02M3/335

Abstract: A crystal that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. A crystal, including: a corundum structured crystalline oxide, the crystalline oxide including gallium and/or indium, and the crystalline oxide further including a metal of Group 4 of the periodic table. The crystal is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.