公开(公告)号：US12191372B2

公开(公告)日：2025-01-07

申请号：US17951512

申请日：2022-09-23

Applicant: FLOSFIA INC.

Inventor： Ryohei Kanno ,  Osamu Imafuji ,  Kazuyoshi Norimatsu ,  Yuji Kato

IPC: H01L29/45 ,  H01L23/367 ,  H01L29/24 ,  H01L29/66 ,  H01L29/872 ,  H02M3/335

Abstract: A crystal that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. A crystal, including: a corundum structured crystalline oxide, the crystalline oxide including gallium and/or indium, and the crystalline oxide further including a metal of Group 4 of the periodic table. The crystal is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.

公开(公告)号：US12107125B2

公开(公告)日：2024-10-01

申请号：US17573790

申请日：2022-01-12

Applicant: FLOSFIA INC.

Inventor： Ryohei Kanno

IPC: H01L29/12 ,  C23C16/40 ,  H01L29/739 ,  H01L29/778 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/26

CPC classification number: H01L29/12 ,  C23C16/403 ,  H01L29/7393 ,  H01L29/778 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/26

Abstract: A first raw material solution containing at least aluminum is atomized to generate first atomized droplets and a second raw material solution containing at least gallium and a dopant is atomized to generate second atomized droplets, and subsequently, the first atomized droplets are carried into a film forming chamber using a first carrier gas and the second atomized droplets are carried into the film forming chamber using a second carrier gas, and then the first atomized droplets and the second atomized droplets are mixed in the film forming chamber, and the mixed atomized droplets are thermally reacted in the vicinity of a surface of the base to form an oxide semiconductor film on the base, the oxide semiconductor film including, as a major component, a metal oxide containing at least aluminum and gallium, wherein the oxide semiconductor film has a mobility of no less than 5 cm2/Vs.