公开(公告)号：US20150194479A1

公开(公告)日：2015-07-09

申请号：US14233699

申请日：2013-09-24

Applicant: FLOSFIA INC.

Inventor： Kentaro Kaneko ,  Toshimi Hitora ,  Takashi Hirao

IPC: H01L29/04 ,  H01L21/02 ,  H01L29/24

CPC classification number: H01L29/04 ,  C30B25/02 ,  C30B29/20 ,  C30B29/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02628 ,  H01L29/24

Abstract: There is provided a semiconductor device including corundum crystal films of good quality. There is provided a semiconductor device including a base substrate, a semiconductor layer, and an insulating film each having a corundum crystal structure. Materials having a corundum crystal structure include many types of oxide films capable of functioning as an insulating film. Since all the base substrate, the semiconductor layer, and the insulating film have a corundum crystal structure, it is possible to achieve a semiconductor layer and an insulating film of good quality on the base substrate.

Abstract translation: 提供了包括质量好的刚玉水晶膜的半导体器件。 提供了一种半导体器件，其包括各自具有刚玉晶体结构的基底基板，半导体层和绝缘膜。 具有刚玉晶体结构的材料包括能够用作绝缘膜的许多类型的氧化膜。 由于所有的基底，半导体层和绝缘膜都具有刚玉晶体结构，所以可以在基底基板上实现质量好的半导体层和绝缘膜。

公开(公告)号：US09711590B2

公开(公告)日：2017-07-18

申请号：US14233699

申请日：2013-09-24

Applicant: FLOSFIA INC.

Inventor： Kentaro Kaneko ,  Toshimi Hitora ,  Takashi Hirao

IPC: H01L29/04 ,  C30B29/22 ,  H01L21/02 ,  C30B25/02 ,  C30B29/20 ,  H01L29/24

CPC classification number: H01L29/04 ,  C30B25/02 ,  C30B29/20 ,  C30B29/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02628 ,  H01L29/24

Abstract: There is provided a semiconductor device including corundum crystal films of good quality. There is provided a semiconductor device including a base substrate, a semiconductor layer, and an insulating film each having a corundum crystal structure. Materials having a corundum crystal structure include many types of oxide films capable of functioning as an insulating film. Since all the base substrate, the semiconductor layer, and the insulating film have a corundum crystal structure, it is possible to achieve a semiconductor layer and an insulating film of good quality on the base substrate.