公开(公告)号：US20140373908A1

公开(公告)日：2014-12-25

申请号：US13923644

申请日：2013-06-21

Applicant: First Solar Inc.

Inventor： Anil Raj Duggal ,  Joseph John Shiang ,  William Hullinger Huber ,  Adam Fraser Halverson

IPC: H01L31/0272

CPC classification number: H01L31/0272 ,  H01L31/02966 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes cadmium, tellurium, and selenium. A semiconductor layer is further disposed on the absorber layer, wherein a valence band offset between the semiconductor layer and the absorber layer is less than about 1.3 electron Volts, and a band gap of the semiconductor layer is in a range from about 1.2 electron Volts to about 3.5 electron Volts.

Abstract translation: 介绍了光伏器件。 光伏器件包括层叠; 并且在层叠上设置吸收层。 吸收层包括镉，碲和硒。 半导体层还设置在吸收层上，其中半导体层和吸收层之间的价带偏移小于约1.3电子伏特，并且半导体层的带隙在约1.2电子伏特至 约3.5电子伏特。

公开(公告)号：US09871154B2

公开(公告)日：2018-01-16

申请号：US13923644

申请日：2013-06-21

Applicant: First Solar, Inc.

Inventor： Anil Raj Duggal ,  Joseph John Shiang ,  William Hullinger Huber ,  Adam Fraser Halverson

IPC: H01L31/0272 ,  H01L31/0296 ,  H01L31/065 ,  H01L31/073 ,  H01L31/18

CPC classification number: H01L31/0272 ,  H01L31/02966 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes cadmium, tellurium, and selenium. A semiconductor layer is further disposed on the absorber layer, wherein a valence band offset between the semiconductor layer and the absorber layer is less than about 1.3 electron Volts, and a band gap of the semiconductor layer is in a range from about 1.2 electron Volts to about 3.5 electron Volts.