公开(公告)号：US11784278B2

公开(公告)日：2023-10-10

申请号：US17963061

申请日：2022-10-10

Applicant: First Solar, Inc.

Inventor： Kristian William Andreini ,  Holly Ann Blaydes ,  Jongwoo Choi ,  Adam Fraser Halverson ,  Eugene Thomas Hinners ,  William Hullinger Huber ,  Yong Liang ,  Joseph John Shiang

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/065 ,  H01L31/073

CPC classification number: H01L31/1828 ,  H01L31/02966 ,  H01L31/022425 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/50

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

公开(公告)号：US20140360565A1

公开(公告)日：2014-12-11

申请号：US13912782

申请日：2013-06-07

Applicant: First Solar, Inc.

Inventor： Holly Ann Blaydes ,  Kristian William Andreini ,  William Hullinger Huber ,  Eugene Thomas Hinners ,  Joseph John Shiang ,  Yong Liang ,  Jongwoo Choi ,  Adam Fraser Halverson

IPC: H01L31/0272 ,  H01L31/18

CPC classification number: H01L31/1828 ,  H01L31/022425 ,  H01L31/02966 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes selenium, and an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer. A method of making a photovoltaic device is also presented.

Abstract translation: 介绍了光伏器件。 光伏器件包括层叠; 并且在层叠上设置吸收层。 吸收层包括硒，并且硒的原子浓度在吸收层的厚度上非线性地变化。 还提出了制造光伏器件的方法。

公开(公告)号：US11164989B2

公开(公告)日：2021-11-02

申请号：US16934726

申请日：2020-07-21

Applicant: First Solar, Inc.

Inventor： Kristian William Andreini ,  Holly Ann Blaydes ,  Jongwoo Choi ,  Adam Fraser Halverson ,  Eugene Thomas Hinners ,  William Hullinger Huber ,  Yong Liang ,  Joseph John Shiang

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/065 ,  H01L31/073

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

公开(公告)号：US10784397B2

公开(公告)日：2020-09-22

申请号：US16200423

申请日：2018-11-26

Applicant: First Solar, Inc.

Inventor： Holly Ann Blaydes ,  Kristian William Andreini ,  William Hullinger Huber ,  Eugene Thomas Hinners ,  Joseph John Shiang ,  Yong Liang ,  Jongwoo Choi ,  Adam Fraser Halverson

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/065 ,  H01L31/073

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

公开(公告)号：US20140373908A1

公开(公告)日：2014-12-25

申请号：US13923644

申请日：2013-06-21

Applicant: First Solar Inc.

Inventor： Anil Raj Duggal ,  Joseph John Shiang ,  William Hullinger Huber ,  Adam Fraser Halverson

IPC: H01L31/0272

CPC classification number: H01L31/0272 ,  H01L31/02966 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes cadmium, tellurium, and selenium. A semiconductor layer is further disposed on the absorber layer, wherein a valence band offset between the semiconductor layer and the absorber layer is less than about 1.3 electron Volts, and a band gap of the semiconductor layer is in a range from about 1.2 electron Volts to about 3.5 electron Volts.

Abstract translation: 介绍了光伏器件。 光伏器件包括层叠; 并且在层叠上设置吸收层。 吸收层包括镉，碲和硒。 半导体层还设置在吸收层上，其中半导体层和吸收层之间的价带偏移小于约1.3电子伏特，并且半导体层的带隙在约1.2电子伏特至 约3.5电子伏特。

公开(公告)号：US20230045333A1

公开(公告)日：2023-02-09

申请号：US17963061

申请日：2022-10-10

Applicant: First Solar, Inc.

Inventor： Kristian William Andreini ,  Holly Ann Blaydes ,  Jongwoo Choi ,  Adam Fraser Halverson ,  Eugene Thomas Hinners ,  William Hullinger Huber ,  Yong Liang ,  Joseph John Shiang

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/065 ,  H01L31/073

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

公开(公告)号：US10141473B1

公开(公告)日：2018-11-27

申请号：US16032531

申请日：2018-07-11

Applicant: First Solar, Inc.

Inventor： Holly Ann Blaydes ,  Kristian William Andreini ,  William Hullinger Huber ,  Eugene Thomas Hinners ,  Joseph John Shiang ,  Yong Liang ,  Jongwoo Choi ,  Adam Fraser Halverson

IPC: H01L31/0272 ,  H01L31/18 ,  H01L31/073 ,  H01L31/065 ,  H01L31/0224 ,  H01L31/0296

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

公开(公告)号：US10062800B2

公开(公告)日：2018-08-28

申请号：US13912782

申请日：2013-06-07

Applicant: First Solar, Inc.

Inventor： Holly Ann Blaydes ,  Kristian William Andreini ,  William Hullinger Huber ,  Eugene Thomas Hinners ,  Joseph John Shiang ,  Yong Liang ,  Jongwoo Choi ,  Adam Fraser Halverson

IPC: H01L31/0272 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/065 ,  H01L31/073

CPC classification number: H01L31/1828 ,  H01L31/022425 ,  H01L31/02966 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes selenium, and an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer. A method of making a photovoltaic device is also presented.

公开(公告)号：US09871154B2

公开(公告)日：2018-01-16

申请号：US13923644

申请日：2013-06-21

Applicant: First Solar, Inc.

Inventor： Anil Raj Duggal ,  Joseph John Shiang ,  William Hullinger Huber ,  Adam Fraser Halverson

IPC: H01L31/0272 ,  H01L31/0296 ,  H01L31/065 ,  H01L31/073 ,  H01L31/18

CPC classification number: H01L31/0272 ,  H01L31/02966 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes cadmium, tellurium, and selenium. A semiconductor layer is further disposed on the absorber layer, wherein a valence band offset between the semiconductor layer and the absorber layer is less than about 1.3 electron Volts, and a band gap of the semiconductor layer is in a range from about 1.2 electron Volts to about 3.5 electron Volts.

公开(公告)号：US20240055546A1

公开(公告)日：2024-02-15

申请号：US18378128

申请日：2023-10-09

Applicant: First Solar, Inc.

Inventor： Kristian William Andreini ,  Holly Ann Blaydes ,  Jongwoo Choi ,  Adam Fraser Halverson ,  Eugene Thomas Hinners ,  William Hullinger Huber ,  Yong Liang ,  Joseph John Shiang

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/065 ,  H01L31/073

CPC classification number: H01L31/1828 ,  H01L31/022425 ,  H01L31/02966 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/50

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.