公开(公告)号：US11876140B2

公开(公告)日：2024-01-16

申请号：US13875739

申请日：2013-05-02

Applicant: First Solar, Inc.

Inventor： Holly Ann Blaydes ,  Kristian William Andreini ,  William Hullinger Huber ,  Eugene Thomas Hinners ,  Joseph John Shiang ,  Yong Liang ,  Jongwoo Choi

IPC: H01L31/0272 ,  H01L31/073 ,  H01L31/0296 ,  H01L31/0224 ,  H01L21/02 ,  H01L31/0392 ,  H01L31/072 ,  H01L31/18 ,  C23C14/06

CPC classification number: H01L31/0272 ,  C23C14/0629 ,  H01L21/0248 ,  H01L21/0251 ,  H01L21/0256 ,  H01L21/02422 ,  H01L21/02477 ,  H01L21/02483 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02562 ,  H01L31/0296 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/022466 ,  H01L31/03925 ,  H01L31/072 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1836 ,  Y02E10/543 ,  Y02P70/50

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

公开(公告)号：US11784278B2

公开(公告)日：2023-10-10

申请号：US17963061

申请日：2022-10-10

Applicant: First Solar, Inc.

Inventor： Kristian William Andreini ,  Holly Ann Blaydes ,  Jongwoo Choi ,  Adam Fraser Halverson ,  Eugene Thomas Hinners ,  William Hullinger Huber ,  Yong Liang ,  Joseph John Shiang

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/065 ,  H01L31/073

CPC classification number: H01L31/1828 ,  H01L31/02966 ,  H01L31/022425 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/50

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

公开(公告)号：US20200381567A1

公开(公告)日：2020-12-03

申请号：US16770388

申请日：2017-12-07

Applicant: First Solar, Inc.

Inventor： Hongbo Cao ,  Sachit Grover ,  William Hullinger Huber ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Hongying Peng ,  Joseph John Shiang ,  Qianqian Xin ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

Abstract: A photovoltaic device (100) can include an absorber layer (160). The absorber layer (160) can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015cm-3. The absorber layer (160) can include oxygen in a central region of the absorber layer (160). The absorber layer (160) can include an alkali metal in the central region of the absorber layer (160). Methods for carrier activation can include exposing an absorber layer (160) to an annealing compound in a reducing environment (220). The annealing compound (224) can include cadmium chloride and an alkali metal chloride.

公开(公告)号：US20140360565A1

公开(公告)日：2014-12-11

申请号：US13912782

申请日：2013-06-07

Applicant: First Solar, Inc.

Inventor： Holly Ann Blaydes ,  Kristian William Andreini ,  William Hullinger Huber ,  Eugene Thomas Hinners ,  Joseph John Shiang ,  Yong Liang ,  Jongwoo Choi ,  Adam Fraser Halverson

IPC: H01L31/0272 ,  H01L31/18

CPC classification number: H01L31/1828 ,  H01L31/022425 ,  H01L31/02966 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes selenium, and an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer. A method of making a photovoltaic device is also presented.

Abstract translation: 介绍了光伏器件。 光伏器件包括层叠; 并且在层叠上设置吸收层。 吸收层包括硒，并且硒的原子浓度在吸收层的厚度上非线性地变化。 还提出了制造光伏器件的方法。

公开(公告)号：US11164989B2

公开(公告)日：2021-11-02

申请号：US16934726

申请日：2020-07-21

Applicant: First Solar, Inc.

Inventor： Kristian William Andreini ,  Holly Ann Blaydes ,  Jongwoo Choi ,  Adam Fraser Halverson ,  Eugene Thomas Hinners ,  William Hullinger Huber ,  Yong Liang ,  Joseph John Shiang

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/065 ,  H01L31/073

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

公开(公告)号：US10784397B2

公开(公告)日：2020-09-22

申请号：US16200423

申请日：2018-11-26

Applicant: First Solar, Inc.

Inventor： Holly Ann Blaydes ,  Kristian William Andreini ,  William Hullinger Huber ,  Eugene Thomas Hinners ,  Joseph John Shiang ,  Yong Liang ,  Jongwoo Choi ,  Adam Fraser Halverson

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/065 ,  H01L31/073

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

公开(公告)号：US20140373908A1

公开(公告)日：2014-12-25

申请号：US13923644

申请日：2013-06-21

Applicant: First Solar Inc.

Inventor： Anil Raj Duggal ,  Joseph John Shiang ,  William Hullinger Huber ,  Adam Fraser Halverson

IPC: H01L31/0272

CPC classification number: H01L31/0272 ,  H01L31/02966 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes cadmium, tellurium, and selenium. A semiconductor layer is further disposed on the absorber layer, wherein a valence band offset between the semiconductor layer and the absorber layer is less than about 1.3 electron Volts, and a band gap of the semiconductor layer is in a range from about 1.2 electron Volts to about 3.5 electron Volts.

Abstract translation: 介绍了光伏器件。 光伏器件包括层叠; 并且在层叠上设置吸收层。 吸收层包括镉，碲和硒。 半导体层还设置在吸收层上，其中半导体层和吸收层之间的价带偏移小于约1.3电子伏特，并且半导体层的带隙在约1.2电子伏特至 约3.5电子伏特。

公开(公告)号：US20250160041A1

公开(公告)日：2025-05-15

申请号：US19023272

申请日：2025-01-15

Applicant: First Solar, Inc.

Inventor： Holly Ann Blaydes ,  Kristian William Andreini ,  William Hullinger Huber ,  Eugene Thomas Hinners ,  Joseph John Shiang ,  Yong Liang ,  Jongwoo Choi

IPC: H10F77/121 ,  C23C14/06 ,  H01L21/02 ,  H10F10/16 ,  H10F10/162 ,  H10F71/00 ,  H10F77/123 ,  H10F77/169 ,  H10F77/20

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

公开(公告)号：US20240055546A1

公开(公告)日：2024-02-15

申请号：US18378128

申请日：2023-10-09

Applicant: First Solar, Inc.

Inventor： Kristian William Andreini ,  Holly Ann Blaydes ,  Jongwoo Choi ,  Adam Fraser Halverson ,  Eugene Thomas Hinners ,  William Hullinger Huber ,  Yong Liang ,  Joseph John Shiang

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/065 ,  H01L31/073

CPC classification number: H01L31/1828 ,  H01L31/022425 ,  H01L31/02966 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/50

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

公开(公告)号：US20230082990A1

公开(公告)日：2023-03-16

申请号：US17986747

申请日：2022-11-14

Applicant: First Solar, Inc.

Inventor： Hongbo Cao ,  Sachit Grover ,  William Hullinger Huber ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Hongying Peng ,  Joseph John Shiang ,  Qianqian Xin ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

Abstract: According to the embodiments provided herein, a photovoltaic device can include an absorber layer. The absorber layer can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015 cm−3. The absorber layer can include oxygen in a central region of the absorber layer. The absorber layer can include an alkali metal in the central region of the absorber layer. Methods for carrier activation can include exposing an absorber layer to an annealing compound in a reducing environment. The annealing compound can include cadmium chloride and an alkali metal chloride.