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    Composite part as well as a method for manufacturing a composite part
    1.
    发明授权
    Composite part as well as a method for manufacturing a composite part 有权
    复合部件以及复合部件的制造方法

    公开(公告)号：US08784964B2

    公开(公告)日：2014-07-22

    申请号：US13232726

    申请日：2011-09-14

    Applicant: Frank Schaefer

    Inventor： Frank Schaefer

    IPC: B60N2/58

    CPC classification number: B60N2/5816 ,  B60N2/5825 ,  B60N2/5883 ,  B60R13/02 ,  B60R13/0206 ,  B60R2013/0293 ,  Y10T428/19 ,  Y10T428/198 ,  Y10T428/24479

    Abstract: A composite part includes a sub-material having a compression hardness of up to 50 kPa with a compression of 40% and a recess formed in the sub-material. A first skin and a second skin are connected at a seam that is disposed within the recess. A holding profile that includes a groove having side walls and a base and at least one wing is introduced into the recess.

    Abstract translation: 复合部件包括压缩硬度高达50kPa，压缩率为40％的子材料和在副材料中形成的凹部。 第一皮肤和第二皮肤在设置在凹部内的接缝处连接。 包括具有侧壁和基部以及至少一个翼的凹槽的保持轮廓被引入到凹部中。

    Method for manufacturing a micromechanical sensor element
    2.
    发明授权
    Method for manufacturing a micromechanical sensor element 有权
    微机械传感器元件的制造方法

    公开(公告)号：US07572661B2

    公开(公告)日：2009-08-11

    申请号：US11223637

    申请日：2005-09-08

    Applicant: Hubert Benzel ,  Stefan Finkbeiner ,  Matthias Illing ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

    Inventor： Hubert Benzel ,  Stefan Finkbeiner ,  Matthias Illing ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

    IPC: H01L21/00

    CPC classification number: B81C1/00047 ,  B81B2203/0109 ,  B81C2201/0115 ,  B81C2201/0116 ,  G01L9/0045

    Abstract: Described is a method for manufacturing a micromechanical sensor element and a micromechanical sensor element manufactured in particular using such a method which has a hollow space or a cavity and a membrane for detecting a physical variable. Different method steps are performed for manufacturing the sensor element, among other things, a structured etch mask having a plurality of holes or apertures being applied on a semiconductor substrate. Moreover, an etch process is used to create depressions in the semiconductor substrate beneath the holes in the structured etch mask. Anodization of the semiconductor material is subsequently carried out, the anodization taking place preferably starting from the created depressions in the semiconductor substrate. Due to this process, porous areas are created beneath the depressions, a lattice-like structure made of untreated, i.e., non-anodized, substrate material remaining between the porous areas and the depressions. This lattice-like structure extends preferably from the surface of the semiconductor into the depth. The etch mask for creating the depressions may be removed, optionally prior to or subsequent to the anodization. A temperature treatment is carried out for creating the hollow space and the membrane in the semiconductor substrate which forms the sensor element. During this process, the hollow space is created from the at least one area that has been rendered porous beneath a depression and the membrane above the hollow space is created from the lattice-like structure by rearranging the semiconductor material.

    Abstract translation: 描述了一种用于制造微机械传感器元件和微机械传感器元件的方法，特别是使用具有中空空间或空腔和用于检测物理变量的膜的方法制造的微机械传感器元件。 执行用于制造传感器元件的不同的方法步骤，其中包括施加在半导体衬底上的多个孔或孔的结构化蚀刻掩模。 此外，蚀刻工艺用于在结构化蚀刻掩模中的孔下面的半导体衬底中产生凹陷。 随后进行半导体材料的阳极氧化，阳极氧化发生优选从半导体衬底中产生的凹陷开始。 由于该过程，在凹陷下方产生多孔区域，由未处理的，即非阳极氧化的衬底材料制成的格状结构保留在多孔区域和凹陷之间。 这种格子状结构优选地从半导体的表面延伸到深度。 用于产生凹陷的蚀刻掩模可以任选地在阳极氧化之前或之后被去除。 进行温度处理，以形成形成传感器元件的半导体衬底中的中空空间和膜。 在该过程中，中空空间是从至少一个已经在凹陷下方多孔的区域产生的，并且通过重新排列半导体材料，从网格状结构产生中空空间之上的膜。

    Micromechanical sensor element
    8.
    发明申请
    Micromechanical sensor element 有权
    微机械传感器元件

    公开(公告)号：US20060063293A1

    公开(公告)日：2006-03-23

    申请号：US11223637

    申请日：2005-09-08

    Applicant: Hubert Benzel ,  Stefan Finkbeiner ,  Matthias Illing ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

    Inventor： Hubert Benzel ,  Stefan Finkbeiner ,  Matthias Illing ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

    IPC: H01L21/00

    CPC classification number: B81C1/00047 ,  B81B2203/0109 ,  B81C2201/0115 ,  B81C2201/0116 ,  G01L9/0045

    Abstract: Described is a method for manufacturing a micromechanical sensor element and a micromechanical sensor element manufactured in particular using such a method which has a hollow space or a cavity and a membrane for detecting a physical variable. Different method steps are performed for manufacturing the sensor element, among other things, a structured etch mask having a plurality of holes or apertures being applied on a semiconductor substrate. Moreover, an etch process is used to create depressions in the semiconductor substrate beneath the holes in the structured etch mask. Anodization of the semiconductor material is subsequently carried out, the anodization taking place preferably starting from the created depressions in the semiconductor substrate. Due to this process, porous areas are created beneath the depressions, a lattice-like structure made of untreated, i.e., non-anodized, substrate material remaining between the porous areas and the depressions. This lattice-like structure extends preferably from the surface of the semiconductor into the depth. The etch mask for creating the depressions may be removed, optionally prior to or subsequent to the anodization. A temperature treatment is carried out for creating the hollow space and the membrane in the semiconductor substrate which forms the sensor element. During this process, the hollow space is created from the at least one area that has been rendered porous beneath a depression and the membrane above the hollow space is created from the lattice-like structure by rearranging the semiconductor material.

    Abstract translation: 描述了一种用于制造微机械传感器元件和微机械传感器元件的方法，特别是使用具有中空空间或空腔和用于检测物理变量的膜的方法制造的微机械传感器元件。 执行用于制造传感器元件的不同的方法步骤，其中包括施加在半导体衬底上的多个孔或孔的结构化蚀刻掩模。 此外，蚀刻工艺用于在结构化蚀刻掩模中的孔下面的半导体衬底中产生凹陷。 随后进行半导体材料的阳极氧化，阳极氧化发生优选从半导体衬底中产生的凹陷开始。 由于该过程，在凹陷下方产生多孔区域，由未处理的，即非阳极氧化的衬底材料制成的格状结构保留在多孔区域和凹陷之间。 这种格子状结构优选地从半导体的表面延伸到深度。 用于产生凹陷的蚀刻掩模可以任选地在阳极氧化之前或之后被去除。 进行温度处理，以形成形成传感器元件的半导体衬底中的中空空间和膜。 在该过程中，中空空间是从至少一个已经在凹陷下方多孔的区域产生的，并且通过重新排列半导体材料，从网格状结构产生中空空间之上的膜。

    Micromechanical diaphragm
    10.
    发明授权
    Micromechanical diaphragm 有权
    微机械振膜

    公开(公告)号：US06649989B2

    公开(公告)日：2003-11-18

    申请号：US09970608

    申请日：2001-10-03

    Applicant: Hubert Benzel ,  Frank Schaefer

    Inventor： Hubert Benzel ,  Frank Schaefer

    IPC: H01L2906

    CPC classification number: G01L9/0042 ,  B81B3/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  H01L29/84

    Abstract: A micromechanical diaphragm is described which has a partially n-doped p-substrate on its surface and a top n-epitaxial layer, one or more n-epitaxial layers which are p-doped in the diaphragm area being arranged on the p-substrate.

    Abstract translation: 描述了一种微机械振动膜，其在其表面上具有部分n掺杂的p型衬底和顶部n外延层，在p衬底上布置有在膜片区域中p掺杂的一个或多个n外延层。

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