公开(公告)号：US09663356B2

公开(公告)日：2017-05-30

申请号：US14307877

申请日：2014-06-18

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： Srivatsa G. Kundalgurki ,  Ruben B. Montez ,  Gary Pfeffer

IPC: B81C1/00

CPC classification number: B81C1/00849 ,  B81C1/00134 ,  B81C1/0092 ,  B81C1/00952 ,  B81C2201/0109 ,  B81C2201/0132

Abstract: A method of making a microelectromechanical systems (MEMS) device includes etching away a sacrificial material layer to release a mechanical element of the MEMS device. The MEMS device is formed at least partially on the sacrificial material layer, and the etching leaves a residue in proximity to the mechanical element. The residue is exposed to an anhydrous solution to remove the residue. The residue may be an ammonium fluorosilicate-based residue, and the anhydrous solution may include acetic acid, isopropyl alcohol, acetone, or any anhydrous solution that can effectively dissolve the ammonium fluorosilicate-based residue.

公开(公告)号：US20150368099A1

公开(公告)日：2015-12-24

申请号：US14307877

申请日：2014-06-18

Applicant: Freescale Semiconductor, Inc.

Inventor： Srivatsa G. Kundalgurki ,  Ruben B. Montez ,  Gary Pfeffer

IPC: B81C1/00

CPC classification number: B81C1/00849 ,  B81C1/00134 ,  B81C1/0092 ,  B81C1/00952 ,  B81C2201/0109 ,  B81C2201/0132

Abstract: A method of making a microelectromechanical systems (MEMS) device includes etching away a sacrificial material layer to release a mechanical element of the MEMS device. The MEMS device is formed at least partially on the sacrificial material layer, and the etching leaves a residue in proximity to the mechanical element. The residue is exposed to an anhydrous solution to remove the residue. The residue may be an ammonium fluorosilicate-based residue, and the anhydrous solution may include acetic acid, isopropyl alcohol, acetone, or any anhydrous solution that can effectively dissolve the ammonium fluorosilicate-based residue.

Abstract translation: 制造微机电系统（MEMS）器件的方法包括蚀刻掉牺牲材料层以释放MEMS器件的机械元件。 MEMS器件至少部分地形成在牺牲材料层上，蚀刻在机械元件附近留下残留物。 将残余物暴露于无水溶液中以除去残余物。 残渣可以是氟硅酸铵系残渣，无水溶液可以含有乙酸，异丙醇，丙酮或能够有效溶解氟硅酸铵残渣的任意无水溶液。