公开(公告)号：US3715636A

公开(公告)日：1973-02-06

申请号：US3715636D

申请日：1972-01-03

Applicant: GEN ELECTRIC

Inventor： JAFFE M ,  POTTER R

IPC: H01L33/34 ,  H01L33/48 ,  H01L33/56 ,  H01L33/64 ,  H01L15/00 ,  H01L1/02 ,  H01L1/10

CPC classification number: H01L33/64 ,  H01L33/343 ,  H01L33/483 ,  H01L33/56 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A boron-doped silicon carbide light-emitting diode chip is mounted, such as on a support member of porous ceramic or other material of similarly low thermal conductivity, so as to operate at a temperature of at least 150*C. Such a construction increases the amount of light produced by the boron-doped silicon carbide diode, due to increased operating temperature. A cover is placed over the diode to prevent convection cooling, thus further increasing the operating temperature and hence the light output. Instead of boron doping, the silicon carbide diode can be doped with other materials that produce similarly deep acceptor levels.

Abstract translation: 硼掺杂的碳化硅发光二极管芯片安装在多孔陶瓷的支撑构件或类似的低导热性的其它材料上，以便在至少150℃的温度下工作。这种结构增加 硼掺杂碳化硅二极管产生的光量，由于工作温度的升高。 在二极管上放置盖子以防止对流冷却，从而进一步增加工作温度，从而进一步增加光输出。 代替硼掺杂，碳化硅二极管可以掺杂有产生类似深受主电平的其它材料。

公开(公告)号：US3760237A

公开(公告)日：1973-09-18

申请号：US3760237D

申请日：1972-06-21

Applicant: GEN ELECTRIC

Inventor： JAFFE M

IPC: H01L33/54 ,  H01L3/00 ,  H01L5/00

CPC classification number: H01L33/54 ,  H01L2224/48247

Abstract: A lens cap is positioned over a light-emitting diode, and a somewhat conical-shaped plastic light director extends between and in intimate contact with the lens cap and the diode, the smaller end of the conical light director being at the diode. A method of manufacture is disclosed in which a viscous plastic monomer is placed in the lens cap and/or on the diode and allowed to deform by gravity to form the conical light director.

Abstract translation: 透镜盖定位在发光二极管上方，并且稍微圆锥形的塑料光导向件在透镜盖和二极管之间延伸并且与透镜盖和二极管紧密接触，锥形光导向器的较小端在二极管处。 公开了一种制造方法，其中将粘性塑料单体放置在透镜盖和/或二极管上，并通过重力使其变形以形成圆锥形光导向器。