公开(公告)号：US3715636A

公开(公告)日：1973-02-06

申请号：US3715636D

申请日：1972-01-03

Applicant: GEN ELECTRIC

Inventor： JAFFE M ,  POTTER R

IPC: H01L33/34 ,  H01L33/48 ,  H01L33/56 ,  H01L33/64 ,  H01L15/00 ,  H01L1/02 ,  H01L1/10

CPC classification number: H01L33/64 ,  H01L33/343 ,  H01L33/483 ,  H01L33/56 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A boron-doped silicon carbide light-emitting diode chip is mounted, such as on a support member of porous ceramic or other material of similarly low thermal conductivity, so as to operate at a temperature of at least 150*C. Such a construction increases the amount of light produced by the boron-doped silicon carbide diode, due to increased operating temperature. A cover is placed over the diode to prevent convection cooling, thus further increasing the operating temperature and hence the light output. Instead of boron doping, the silicon carbide diode can be doped with other materials that produce similarly deep acceptor levels.

Abstract translation: 硼掺杂的碳化硅发光二极管芯片安装在多孔陶瓷的支撑构件或类似的低导热性的其它材料上，以便在至少150℃的温度下工作。这种结构增加 硼掺杂碳化硅二极管产生的光量，由于工作温度的升高。 在二极管上放置盖子以防止对流冷却，从而进一步增加工作温度，从而进一步增加光输出。 代替硼掺杂，碳化硅二极管可以掺杂有产生类似深受主电平的其它材料。