PHOTOSENSITIVE SACRIFICIAL POLYMER WITH LOW RESIDUE
    1.
    发明申请
    PHOTOSENSITIVE SACRIFICIAL POLYMER WITH LOW RESIDUE 审中-公开
    具有低残留性的光敏聚合物

    公开(公告)号:US20140272708A1

    公开(公告)日:2014-09-18

    申请号:US14250455

    申请日:2014-04-11

    Abstract: Embodiments according to the present invention relate generally to PAG bilayer and PAG-doped unilayer structures using sacrificial polymer layers that incorporate a photoacid generator having a concentration gradient therein. Said PAG concentration being higher in a upper portion of such structures than in a lower portion thereof. Embodiments according to the present invention also relate to a method of using such bilayers and unilayers to form microelectronic structures having a three-dimensional space, and methods of decomposition of the sacrificial polymer within the aforementioned layers.

    Abstract translation: 根据本发明的实施方案一般涉及使用掺入其中具有浓度梯度的光致酸发生器的牺牲聚合物层的PAG双层和PAG掺杂的单层结构。 所述PAG浓度在这种结构的上部比在其下部更高。 根据本发明的实施方案还涉及使用这种双层和单层以形成具有三维空间的微电子结构的方法,以及在上述层内分解牺牲聚合物的方法。

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